alpha-decay half-lives and Q(alpha) values of superheavy nuclei

The alpha-decay half-lives of recently synthesized superheavy nuclei (SHN) are investigated by employing a unified fission model (UFM) where a new method to calculate the assault frequency of alpha emission is used. The excellent agreement with the experimental data indicates the UFM is a useful tool to investigate these alpha decays. It is found that the alpha-decay half-lives become more and more insensitive to the Q(alpha) values as the atomic number increases on the whole, which is favorable for us to predict the half-lives of SHN. In addition, a formula is proposed to compute the Q(alpha) values for the nuclei with Z >= 92 and N >= 140 with a good accuracy, according to which the long-lived SHN should be neutron rich. Several weeks ago, two isotopes of a new element with atomic number Z = 117 were synthesized and their alpha-decay chains have been observed. The Q(alpha) formula is found to work well for these nuclei, confirming its predictive power. The experimental half-lives are well reproduced by employing the UFM with the experimental Q(alpha) values. This fact that the experimental half-lives are compatible with experimental Q(alpha) values supports the synthesis of a new element 117 and the experimental measurements to a certain extent.

Bi同位素链上原子核α衰变性质的理论研究；Theoretical Study on α Decay Properties for Bi Isotopes

采用结团模型(clustermodel)计算了从10752Te到292116共443个核素α衰变的半衰期,所得结果与实验值符合得很好,显示了结团模型可以成功地应用于研究原子核α衰变的性质。同时研究了Bi同位素链上奇A核α衰变的半衰期,计算结果与已有的实验值的偏差一般在3倍以内,进而对实验上未知α衰变半衰期的原子核的性质进行了预言。这有助于将来在实验室探测与鉴别这些原子核以及研究它们的α衰变性质。理论与实验的比较将加深人们对原子核结构的认识。

Alpha-decay for heavy nuclei in the ground and isomeric states

The alpha-decay half-lives of nuclei in the ground states and Isomeric states have been calculated within the WKB approximation and Royer's formulas. The barrier in the quasimolecular shape path is determined within a generalized liquid drop model (GLDM). in which the centrifugal potential energy has been introduced to study the unfavored a-decay The agreement between the calculated results and experimental data indicates the reliability of studying alpha-decay of isomeric states with the generalized liquid drop model We find that their is no significant difference of preformation probability between Isomeric states and the corresponding ground states generally in favored alpha-decay Additionally. we extended Royer's formulas by taking account of the role of centrifugal harrier to study the unfavored alpha-decay, and some predicts oil the a decay half-lives of Isomers are made Finally. the effects of angular momontum transfer and Q(alpha) on alpha-decay half-life have been discussed Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved

Properties of the beta-delayed proton decay of Ho-146

The proton-rich isotope Ho-148 was produced via the fusion-evaporation reaction Mo-92 (Ni-58, 3p1n). The beta-delayed proton decay of Ho-146 was studied by proton-gamma coincidence measurements using a He-jet tape transport system. The gamma-transitions in Tb-145 following the proton emissions were observed, and the beta-delayed proton branching ratios to the final states in the grand-daughter nucleus Tb-145 were determined. According to the relative branching ratios, the ground-state spin of Ho-146 has been proposed and the possible configuration discussed.

Properties of the beta-Delayed Proton Decay of Er-147

The beta-delayed proton decay of Er-147 is studied experimentally using the Ni-58+Mo-92 reaction at a beam energy of 383 MeV. Based on a He-jet apparatus coupled with a tape transport system, the beta-delayed proton radioactivities both from the nu s(1/2) ground state and the nu h(11/2) isomer in Er-147 are identified by proton-gamma coincidence measurements. By analyzing the time distribution of the 4(+) -> 2(+) gamma transition in the grand-daughter nucleus Dy-146, a half-life of 1.6 +/- 0.2 s is determined for the nu h(11/2) isomer in Er-147. The half-life for the ground state of Er-147 is estimated to be 3.2 +/- 1.2 s.

Improvement of a Fission-Like Model for Nuclear alpha Decay

The alpha decay constant is the product of the penetrability P and assault frequency nu(0) in the fission-like model. An effective assault frequency P-nu replacing the previous assault frequency nu(0) is introduced for improvement of a fission-like model named the generalized liquid drop model (GLDM) to describe the nuclear alpha decay process more accurately. Two analytical formulae are proposed for the effective assault frequency due to experimental data within the GLDM. The improved model can be used to give accurate calculations for alpha decay half-lives.

~(145)Er的β延发质子衰变性质研究；Properties of β-delayed Proton Decay of ~(145)Er

通过92Mo(58Ni,2p3n)熔合蒸发反应生成了非常缺中子核145Er。利用氦喷嘴带传输系统把研究目标核传输到低本底测量站,进行了质子-γ符合测量,得到了不受同量异位素干扰的145Er的β延发质子谱。经过仔细分析与延发质子符合的γ谱,发现了145Er的11/2-同核异能态具有β延发质子衰变性质。经拟合退激144Dy不同激发态γ跃迁的衰变曲线,得出145Er的1/2+基态和11/2-同核异能态的半衰期分别为(1.6±0.6)和(0.6±0.1)s。最后,简单介绍了中重质量区缺中子新核素的合成及衰变研究计划。

PROPERTIES OF ALPHA DECAY TO ROTATIONAL BANDS OF HEAVY NUCLEI

In the framework of the generalized liquid drop model (GLDM) and improved Royer's formula, we investigate the branching ratios and half-lives of alpha-decay to the members of the ground-state rotational bands of heavy even-even Fm and No isotopes. The calculated results are in good agreement with the available experimental data and some useful predictions are provided for future experiments.

Decay dynamics of excited CS2 and NH3 investigated by femtosecond laser

By using the home-made femtosecond laser system and the time-of-flight mass spectrometer, the decay dynamics of excited carbon disulfide (CS2) and ammonia (NH3) are investigated in real time by pump-probe multiphoton ionization detection. The estimated lifetime constant of the NH3 (A) over tilde (1)A(2)' state (51+/-4 fs) agreed quite well with the literature report. For the first time, the decay lifetime constants of the NH3 (E) over tilde'(1)A(1)' state (937+/-93 fs), the CS2 (a) over tilde (3)A(2) state (153+/-10 fs), and the CS2 Rydberg state [(3)/(2)]6ssigma(g) ((3)Pi(g)) (948+/-23 fs) are obtained.

Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base

In order to realize the common-emitter characteristics of the tris(8-hydroxyquinoline) aluminium (Alq(3))-based organic transistors, we used Au/Al double metal layer as the base, thus the vertical metal-base transistors with structure of Al/n-Si/Au/Al/Alq(3)/LiF/Al were constructed. It was found that the contact properties between the base and the organic semiconductors play an important role in the device performance. The utilization of Au/Al double layer metal base allows the devices to operate at high gain in the common-emitter and common-base mode at low operational voltage.

High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter

We report the fabrication of permeable metal-base transistors based on bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-biphenyl-4-olato) aluminum (BAlq(3))/tri(8-hydroxyquinoline) aluminum (Alq(3)) isotype heterostructure as emitter layer. In this transistor, n-Si was used as the collector, LiF/Al as the emitter electrode, and Au/Al bilayer metal as the base. We show that the leakage current is greatly reduced in Al/n-Si/Au/Al/BAlq(3)/Alq(3)/LiF/Al devices with respect to Al/n-Si/Au/Al/Alq(3)/LiF/Al devices due to the utilization of BAlq(3)/Alq(3) isotype heterostructure emitter, leading to high common-base and common-emitter current gains at low driving voltages.

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage.