Crystallization of amorphous Ge2Sb2Te5 films induced by a single femtosecond laser pulse

Crystallization is achieved in amorphous Ge2Sb2Te5 films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the ferntosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs. (C) 2004 Elsevier Ltd. All rights reserved.

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

Optical recording properties of metal-azo dye as recording medium with super-resolution near-field structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure (Super-RENS) of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270 degrees C and the mass loss is about 48% in a narrow temperature region (15 degrees C). The complex refractive index N (N = n + ik) is measured. High refractive index (n = 2.45) and low extinction coefficient (k = 0.2) at the recording wavelength 650nm are attained. Static optical recording tests with and without Super-RENS are carried out using a 650nm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.

Laser pulse induced bumps in chalcogenide phase change films

Formation of bumps in chalcogenide phase change thin films during the laser writing process is theoretically and experimentally investigated. The process involves basically fast heating and quenching stages. Circular bumps are formed after cooling, and the shape and size of the bumps depend on various parameters such as temperatures, laser power, beam size, laser pulse duration, etc. In extreme cases, holes are formed at the apex of the bumps. To understand the bumps and their formation is of great interest for data storage. In the present work, a theoretical model is established for the formation process, and the geometric characters of the formed bumps can be analytically and quantitatively evaluated from various parameters involved in the formation. Simulations based on the analytic solution are carried out taking Ag8In14Sb55Te23 as an example. The results are verified with experimental observations of the bumps. (C) 2008 American Institute of Physics.

Excimer laser plasma to control laser pulse duration

An injection-locking excimer laser beam with a pulse duration of 25 ns is focused on the surface of a polymide film. The laser beam that passes through the etching film is shorter than the original one. By optimizing the thickness of the film and the beam power density, a pulse with a 3-ns pulse duration can be obtained using this switch technology.

A Q-swicthed all-solid-state single-longitudinal-mode laser with adjustable pulse-width and high repetition rate

A single-longitudinal-mode (SLM) laser-diode pumped Nd: YAG laser with adjustable pulse width is developed by using the techniques of pre-lasing and changing polarization of birefingent crystal. The Q-switching voltage is triggered by the peak of the pre-lasing pulse to achieve the higher stability of output pulse energy. The output energy of more than 1 mJ is obtained with output energy stability of 3% (rms) at 100 Hz. The pulse-width can be adjusted from 30 ns to 300 ns by changing the Q-switching voltage. The probability of putting out single-longitudinal-mode pulses is almost 100%. The laser can be run over four hours continually without mode hopping.

Stable pulse-compressed acousto-optic Q-switched fiber laser

A novel acousto-optic switch operation by a simple laser-diode pumped acousto-optic, Q-switched, ytterbium-doped, double-clad fiber laser is reported. Stable compressed Q-switched sub-40 ns pulses with a beam quality factor (M-2 = 2) are achieved at the repetition rate of 1-50 kHz. Q-switched pulses of similar to 20 mu J pulse energy and 35 as pulse width are obtained at the repetition rate of 50 kHz. Finally, a reasonable explanation of the novel Q-switched operation is presented. (c) 2007 Optical Society of America.

Cr2+:ZnSe中红外激光器

Cr2+掺杂II-VI族化合物在中红外波段的输出，在气体检测、遥感、通信、眼科医学、神经外科等领域有着重要的应用前景。目前已经获得了最大1.7 W的连续输出功率，18.5 W的平均脉冲功率，1100 nm的调谐范围和最窄4 ps的脉宽。对Cr2+:ZnSe连续、脉冲、随机纳米激光器以及其它的Cr2+掺杂II-VI族化合物激光器的最新的国内外研究进展进行了综述。

20-W average power, high repetition rate, nanosecond pulse with diffraction limit from an all-fiber MOPA system

In this article, we report an all-fiber master oscillator power amplifier (MOPA) system, which can provide high repetition rate and nanosecond pulse with diffraction-limit. The system was constructed using a (2 + 1) X 1 multimode combiner. The Q-Switched, LD pumped Nd:YVO4 solid-state laser wets used (is master oscillator. The 976-nm fiber-coupled module is used as pump source. A 10-m long China-made Yb3+-doped D-shape double-clad large-mode-area fiber was used as amplifier fiber. The MOPA produced as much as 20-W average power with nanosecond pulse and near diffraction limited. The pulse duration is maintained at about 15 its during 50-175 kHz. The system employs a simple and compact architecture and is therefore suitable for the use in practical applications such as scientific and military airborne LIDAR and imaging. Based oil this system. the amplification performances of. the all fiber amplifier is investigated. (C) 2008 Wiley Periodicals, Inc.

Yb^3＋掺杂锌锗碲酸盐玻璃的热分析、光谱和激光性质

设计了组成为0．70TeO2-(0．20-x)ZnO-xGeO2—0．05La2O3-0．025K2O-0．025Na2O-0．01Yb2O3(摩尔分数x=0,0．05，0．10，0．15和0．20)的碲酸盐激光玻璃，测试了热学性质、吸收光谱、荧光光谱和荧光寿命。计算了Yb^3+离子的吸收截面、受激发射截面、荧光有效线宽等参数。结果表明，组成为0．70TeO2-0．20GeO2-0．05La2O3-0．025K2O-0．025Na2O的玻璃具有优于著名的碲锌钠(TZN)玻璃的热稳定性，高的受激发射截面(1

Yb：铅锌镧碲酸盐玻璃的热学、光谱和激光性质

研究了摩尔组分为70TeO2-(20-x)ZnO-xPbO-5La2O3-2.5K2O-2．5Na2O(x=0，5，10，15，20)的新型多元铅锌镧碲酸盐激光玻璃，外掺Yb2O3为玻璃摩尔组分的1％，测试了试样的物理性质及吸收光谱、荧光光谱和荧光寿命，计算了Yb^3+的吸收截面、受激发射截面、荧光有效线宽等光谱参数，结果表明：该系列玻璃都具有良好的热学稳定性((Tx-Tg)>195℃，高于TZN玻璃(118℃))；当X=15时，样品具有较好的光谱性质：高的受激发射截面(1．25pm^2)、长的荧光寿命(