飞秒激光作用下全向高反膜破坏的激发过程

设计和制备了全向高反膜SiO2／TiO2，研究了它在不同脉冲宽度、不同脉冲能量的飞秒激光作用下的破坏阈值和烧蚀深度．利用发展的抽运．探针方法，研究了抽运脉冲作用下材料中导带电子的超快激发和能量沉积过程，建立并求解了飞秒激光激发材料和材料的激发对抽运光自身反作用的耦合动力学模型．模型较好地揭示了材料破坏的激发过程．

飞秒激光作用下透明介质材料的反射率演化

利用800nm抽运和400nm探针技术，测量了CaF2和MgO的时间分辨反射率，研究了材料的电子激发和弛豫超快动力学过程。采用耦合动力学模型，探讨了飞秒激光对透明介质材料的激发，以及材料的激发对抽运激光在材料中的传输、分布和反射特性的影响。根据这个理论模型计算了时间分辨反射率的演化，计算结果和实验结果相吻合。研究表明，多光子电离（MPI）和碰撞电离（II）在介质材料的导带电子激发中起着重要的作用。

时间分辨的X射线衍射

详细论述了时间分辨X射线衍射探测原子动态过程和生物大分子瞬态结构的各种方法。介绍了多种超快X射线脉冲光源及其在材料和生化领域中的研究进展状况。材料方面：在皮秒时间尺度探测到了晶格间距毫埃的微小变化；在亚皮秒的时间尺度直接观测到晶体的超快熔化过程和晶体内的相干声子散射；生物化学方面：采用时间分辨X射线劳厄衍射方法探测了蛋白质大分子结构的变化和功能之间的关系；精确描述了有机分子在光作用下形态发生改变时分子键角的扭转角度，从结构上揭示了其动态机理。

Comparison of laser performances of 5at.% Yb : Gd2xY2(1-x)SiO5 crystals between different cutting directions

We investigate the laser actions of 5at.% Yb:Gd2xY2(1-x)SiO5 (Yb:GYSO; x = 0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9 W. In contrast, the sample cut parallel reaches only 1.65 W at 1044 nm with a slope elLiciency of 33.76% with absorbed pump power of 7.99 W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68 nm to 1084.82 nm.

Third harmonic enhancement due to Fano interference in semiconductor quantum well

We investigate the emission spectra of the semiconductor quantum well for few-cycle and sub-cycle pulse exciting. We find that Fano interference may induce third harmonic enhancement. Third harmonic enhancement varies with the magnitude and duration of the incident pulse, and may be enhanced by approximately one order of magnitude for the low intensity region of the sub-cycle incident pulse exciting.

Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps. (c) 2005 Elsevier Ltd. All rights reserved.

The ultrafast excitation processes in femtosecond laser-induced damage in dielectric omnidirectional reflectors

A pump and probe system is developed, where the probe pulse duration tau is less than 60 fs while the pump pulse is stretched up to 150-670 fs. The time-resolved excitation processes and damage mechanisms in the omnidirectional reflectors SiO2/TiO2 and ZnS/MgF2 are studied. It is found that as the pump pulse energy is higher than the threshold value, the reflectivity of the probe pulse decreases rapidly during the former half, rather than around the peak of the pump pulse. A coupled dynamic model based on the avalanche ionization (AI) theory is used to study the excitation processes in the sample and its inverse influences on the pump pulse. The results indicate that as pulse duration is longer than 150 fs, photoionization (PI) and AI both play important roles in the generation of conduction band electrons (CBEs); the CBE density generated via AI is higher than that via PI by a factor of 10(2)-10(4). The theory explains well the experimental results about the ultrafast excitation processes and the threshold fluences. (c) 2006 American Institute of Physics.

Dynamics of femtosecond laser pulse induced damage in multilayers

We report the single-shot damage thresholds of MgF2/ZnS onmidirectional reflector for laser pulse durations from 50 A to 900 fs. A coupled dynamic model is applied to study the damage mechanisms, in which we consider not only the electronic excitation of the material, but also the influence of this excitation-induced changes in the complex refractive index of material on the laser pulse itself. The results indicate that this feedback effect plays a very important role during the damage of material. Based on this model, we calculate the threshold fluences and the time-resolved excitation process of the multiplayer. The theoretical calculations agree well with our experimental results. (c) 2005 Elsevier B.V. All rights reserved.

Mechanisms of femtosecond laser-induced damage in magnesium fluoride

We studied the single-shot damage in magnesium fluoride irradiated by 800 nm femtosecond (fs) laser. The dependence of damage thresholds on the laser pulse durations from 60 to 750 fs was measured. The pump-probe measurements were carried out to investigate the time-resolved electronic excitation processes. A coupled dynamic model was applied to study the microprocesses in the interaction between fs laser and magnesium fluoride. The results indicate that both multiphoton ionization and avalanche ionization play important roles in the femtosecond laser-induced damage in MgF2. (C) 2006 Elsevier Ltd. All rights reserved.

Improved fluorescence from Tm3+/Er3+/Ce3+ triply doped bismuth-silicate glasses for S+C-bands amplifiers

Fluorescence of Tm3+/Er3+ codoped bismuth-silica (BS) glasses and the sensitization of Ce3+ are investigated. It shows that Ce3+ codoping with Tm3+/Er3+ in BS glasses results in a quenching of Tm3+ ion emission from F-3(4) to the H-3(6) level. Consequently, the 1.47 mu m emission occurs after the population inversion between the H-3(4) and F-3(4) levels. Furthermore, the codoped glasses show the broad emission spectra over the whole S and C bands with full-width at half-maximum (FWHM) up to about 119nm, as it combines 1.55 mu m emission band of Er3+ with 1.47 mu m emission band of Tm3+ under 800nm excitation.

增益随机散射介质中的非相干辐射

用蒙特卡罗方法仿真了增益随机散射体中的非相干辐射，观察了非相干随机激光的特性。当抽运能量超过一定阈值时，散射体的整体辐射谱突然变窄；随着抽运能量继续增大，在光滑谱背景上会出现分离尖峰；散射体内空间某位置处频率组成不是单一的；辐射谱中某单个频率的空间方向分布和位置分布比较广。增益随机散射体中产生的非相干随机激光本质上既不同于无反馈的普通放大自发辐射，又不同于相干反馈形成的常规激光。解释了非相干随机激光辐射谱上出现分离尖峰的原因，出现这种现象是由于少数光子在增益散射体中经历较多次数散射后得到了相对充分的放大。

Highly efficient Nd:YAG ceramic CW laser with 59.8% slope-efficiency

In this paper, a highly efficient Ti:sapphire end-pumped 1 at.-% Nd:YAG ceramic laser that is comparable in efficiency with Nd:YAG single crystal lasers has been developed. Optical absorption and emission spectra for Nd:YAG ceramics have been measured. With 673-mW pumping, 295-mW laser output at 1064 nm has been obtained. The laser threshold is only 13 mW. Deducted the transmitted light, the corresponding optical-to-optical conversion efficiency is 58.4%. The lasing characteristics of Nd:YAG ceramic are nearly equal to those of Nd:YAG single crystal.

掺铒碲-钨-钠玻璃基质的光谱性质研究

制备了用于离子交换法制备光波导器件的掺铒碲-钨-钠玻璃基质。应用扎得-奥菲而特(Judd—Ofelt)理论计算了玻璃样品的三个强度参量，由强度参量计算了Er^3+离子的自发跃迁几率、荧光分支比等光谱参量；应用麦克库玻(McCumber)理论，计算了Er^3+离子在1．5μm的受激发射截面，荧光测试发现Er^3+离子的荧光半峰全宽可达65nm。比较了Er^3+离子在不同玻璃基质中的光谱特性。结果表明，Er^3+离子在碲-钨-钠玻璃中具有较高的受激发射截面和较宽的荧光半峰全宽，可以用于宽带光波导器件的制备。

TeO2-ZnO-Na2O-K2O玻璃中Er^3＋离子掺杂浓度对其发光及荧光寿命的影响

测量了不同掺杂浓度下Er^3+离子在碲酸盐玻璃中的吸收光谱、发射光谱和Er^3+离子的荧光寿命，计算了Er^3+离子的发射截面σc，分析了Er^3+离子掺杂浓度对其发光强度和荧光寿命的影响．结果表明，Er^3+离子掺杂浓度较低时，对其荧光强度和荧光寿命没有显著的影响；掺杂浓度高时，出现了浓度猝灭效应，使Er^3+离子荧光光强度降低，荧光寿命下降．实验确定了掺杂浓度最优值，同时对浓度猝灭机制进行了分析．

X 射线转换屏用Tb3+激活磷酸盐发光玻璃

Phosphate glasses 60P2O5-15CS2O- 15Al2O3-10BaO were made by high temperature melt-annealing method. The absorption spectra, excitation spectra and emission spectra of Gd³⁺-Tb³⁺ and Ce3+-Gd³⁺-Tb³⁺ co-doped phosphate glass 60P2O5-15CS2O- 15Al2O3-10BaO were studied. The experimental results indicate that, the doping of Ce3+ and Gd³⁺ in Tb³⁺ phosphate glass has a good effect on the 545 nm emission of Tb³⁺ at UV excitation. The Ce3+-Gd³⁺-Tb³⁺ co-doped phosphate glass have a good x-ray luminescence at the radiation of x-ray with energy in 50-120 kev, and a high space resolution. The Ce3+-Gd³⁺-Tb³⁺ co-doped phosphate luminescence glass is a promising material for using in the digital radiography system in medical devices.