聚烯烃弹性体改性尼龙及其共混体系形态、结构与性能

一种新型的聚烯烃弹性体（乙烯-α-烯烃共聚物）EOCP，在引发剂过氧化二异丙苯(DCP)的作用下，与马来酸酐(MA)发生接枝反应，实现了EOCP的官能化，MA的接枝率在0.13～0.92wt%之间。对于弹性体改性尼龙1010 (PA1010)体系，膜抽提实验，间接证实了原位接枝产物PA1010-g- (MA-g-EOCP)的形成。弹性体含量为15wt%时，PA1010/EOCP-g-MA共混物的缺口冲击强度、断裂伸长率、熔体流动速率值在接枝率为0.51wt%处均出现极值；接枝率为0.30～0.51wt%是增韧尼龙的最佳范围；分散相的平均粒径与弹性体的接枝率成反比。少量的接枝弹性体（约12wt%，接枝率为0.51wt%）即能实现PA1010的脆韧转变；形态分析表明，EOCP改性PA1010体系，分散相的平均粒径与其含量成正比，而EOCP-g-MA改性PA1010体系，分散相的平均粒径几乎与其含量无关。WAXD、偏光显微镜及DSC研究表明：EOCP对PA1010的晶型不产生影响；EOCP-g-MA作为异相成核剂，使PA1010球晶向细晶化方向发展，而且随着接枝弹性体含量的增多而加强；DSC分析进一步证实了接枝弹性体促进了PA1010的结晶。EOCP-g-MA是制备PA6/PP合金的一种高效增容剂和改性剂；形态分析显示：EOCP-g-MA改善了尼龙相与聚丙烯相之间的相容性；相对于纯弹性体，接枝弹性体改性的PA6/PP共混体系，形成PA6与PP的共连续相结构，要求组分中有更多的PA6。

聚氨酯弹性体/蒙脱土纳米复合材料的制备与性能

本论文分别以尼龙11、PP-MA-1001, pp-MA-1010作为增容剂，采用熔融插层法制备了聚氨酷弹性体／蒙脱土复合材料；并采用XRD, TEM, DSC、FTIR,TGA等手段进行表征。结果表明：以尼龙11为增容剂制备的复合材料中，硅酸盐片层聚集体以微米级分散；以PP-MA-1001为增容剂，硅酸盐片层聚集体以100-400nm均匀分散；以pp-MA-1010为增容剂，硅酸盐片层聚集体以10-1OOnm均匀分散。在熔融插层的研究中我们发现，导致硅酸盐片层在聚氨酷基体中剥离开来而又均一分散的影响因素有两个：(1)增容剂的插层能力；(2)增容剂与聚氨醋弹性体的相容性。MA的含量是影响PP-MA增容作用的关键因素。力学性能测试及DMA结果表明，以PP佩MA-1010为增容剂制备的复合材料储能模量在-50℃以上有了全面提高，且断裂伸长率基本保持。为了加强对比，我们又以四氢吠喃为溶剂，采用溶液插层法制备了聚氨酷弹性体／蒙脱土复合材料，结果表明，硅酸盐片层聚集体在聚氨醋基体中以纳米级分散，复合材料拉伸模量提高两倍，断裂伸长率提高一倍。

聚合物结晶过程及形态结构的研究

聚合物结晶过程是高分子科学中的一个重要研究方向。本论文在系统研究几种聚合物结晶过程及形态结构的基础上，通过寻求合适的解析聚合物结晶动力学参数的方法，为聚合物结晶动力学的表征和加工工艺设计提供科学依据。采用偏光显微镜（POM）研究了尼龙1212（Nylon 1212）、聚丁二酸丁二醇酷（PBS）及其与己二酸的共聚物（PBS／A）的等温结晶过程。发现碰撞前后球晶的生长速率不变，而在结晶后期球晶生长速率逐渐减慢。PBS／A环带球晶生长过程中球晶半径和结晶时间并非完全的线性关系，而是在直线两侧周期性地摆动。首次非常清晰地观察到PBS结晶后期弱区中新球晶的成核和生长。采用非等温方法在较低的降温速率下获得的聚合物球晶生长速率与等温方法得到的结果有可比性。在计算Nyton1212平衡热力学参数的基础上，采用L-H二次成核理论对N贝on1212的结晶行为进行分析，发现区域I→II和II-III转变分别发生在179Oc和159OC。随着结晶温度的降低，Nylon1212的结晶形态分别为轴状结构晶体、环带球晶和非环带球晶。广角X射线衍射（WAXD）研究表明，PBS和PBS／A具有相同的晶体结构。与PBS相比，PBS／A的结晶度和结晶速率下降。PBS和PBS／A均出现了区域n一Hl的转变，分别发生在％。C和75OC。随着结晶温度的降低，PBS和PBS／A的结晶形态分别为轴状结构晶体、非环带球晶和环带球晶。与PBS相比，PBS／A形成的环带球晶更规整。采用示差扫描量热法（DSC）研究了Nylon 1212、PBS、PBS／A和间规1，2聚丁二烯（st-1，2PB）的本体结晶动力学。发现采用序列一并列Avrami方程能较好地描述Nylon1212的等温结晶全过程。采用不同方法对st-1，2PB的非等温结晶动力学进行研究，发现由Jeziony方法和ozawa方法分析很难得到可靠的动力学参数，而根据莫志深等提出的新方法可较好地进行描述。采用Vyazovkin方法计算了Nylon 1212、st-1，2PB、PBS和PBS／A的非等温结晶活化能，均发现结晶活化能随相对结晶度的升高而升高。初步研究了结晶条件和扫描速率对Nylon 1212、st-1，2PB、PBs和PBs／A熔融行为的影响，并根据Hoffinan-Weeks方法求得了几种聚合物的平衡熔融温度。

Waterborne exposure to PFOS causes disruption of the hypothalamus-pituitary-thyroid axis in zebrafish larvae

Thyroid hormones (THs) play an important role in the normal development and physiological functions in fish. Environmental chemicals may adversely affect thyroid function by disturbing gene transcription. Perfluorooctane sulfonate (PFOS), a persistent compound, is widely distributed in the aquatic environment and wildlife. In the present study, we investigated whether PFOS could disrupt the hypothalamic– pituitary–thyroid (HPT) axis. Zebrafish embryos were exposed to various concentrations of PFOS (0, 100, 200 and 400 lg L 1) and gene expression patterns were examined 15 d post-fertilization. The expression of several genes in the HPT system, i.e., corticotropin-releasing factor (CRF), thyroid-stimulating hormone (TSH), sodium/iodide symporter (NIS), thyroglobulin (TG), thyroid peroxidase (TPO), transthyretin (TTR), iodothyronine deiodinases (Dio1 and Dio2) and thyroid receptor (TRa and TRb), was quantitatively measured using real-time PCR. The gene expression levels of CRF and TSH were significantly up-regulated and down-regulated, respectively, upon exposure to 200 and 400 lg L 1 PFOS. A significant increase in NIS and Dio1 gene expression was observed at 200 lg L 1 PFOS exposure, while TG gene expression was down-regulated at 200 and 400 lg L 1 PFOS exposure. TTR gene expression was down-regulated in a concentration-dependent manner. Up-regulation and down-regulation of TRa and TRb gene expression, respectively, was observed upon exposure to PFOS. The whole body thyroxine (T4) content remained unchanged, whereas triiodothyronine (T3) levels were significantly increased, which could directly reflect disrupted thyroid hormone status after PFOS exposure. The overall results indicated that PFOS exposure could alter gene expression in the HPT axis and that mechanisms of disruption of thyroid status by PFOS could occur at several steps in the synthesis, regulation, and action of thyroid hormones.

Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs

Homoepitaxial growth of4H-SiC on off-oriented Si-face （0001） 4H-SiC substrates was performed at 1500℃ by using the step controlled Epitaxy. Ti/4H-SiC Schottky barrier diodes （SBDs） with blocking voltage over lkV have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. The diode rectification ratio of forward to reverse （defined at ± 1V） is over 107 at room temperature and over 10^2 at 538K. Their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. The ideality factor and Schottky barrier height obtained at room temperature are 1.33 and 0. 905eV, respectively. The SBDs have on-state current density of 150A/cm^2 at a forward voltage drop of about 2.0V. The specific on-resistance for the rectifier is found to be as 7.9mΩ · cm^2 and its variation with temperature is T^2.0.

图形衬底上硅区双离子束选择淀积Co研究

报道了利用质量分离低能双离子束淀积法在硅-氧化硅图形衬底上采用不同的工艺条件淀积钴(Co)离子，并生长硅化钴薄膜。扫描俄歇微探针(SAM)和X光电子能谱(XPS)测量结果表明，只在纯硅区探测到了硅化钴；而氧化硅区始终未见有钴的迹象。很好地实现了在图形衬底上钴离子的选择淀积和硅化钴薄膜的选择生长。

齐墩果酸的微生物转化

齐墩果酸（OA）是一个分布广泛、含量丰富的天然三萜化合物，常以皂苷元的形式广泛存在于植物中,具有多种重要生物活性。但是OA许多活性较弱，且生物利用度低，限制了其在临床上的应用。一是OA水溶性差;二是抗癌活性仍与临床应用的抗癌药物相差比较大。 真菌在微生物转化中具有种类多、培养条件比较简单等特点，为了寻找到具有转化OA能力的菌株，采取一步发酵的方法，在18株实验室保藏真菌菌株中筛选到5株目的菌株,TLC分析显示有转化效果。 随后采用二步发酵的方法作为复筛，验证5株菌株转化能力，波谱分析结果表明5株菌株对OA确实有转化作用。 选择5株菌种中代号1F-2 2菌株作为放大实验菌株，分离转化产物，得到OA衍生物108（相对分子量414m/z）和1010（相对分子量340 m/z），分离出的产物用于活性检测。寻找到产物108的RP-HPLC分离条件，质谱得出二者相对分子质量。 为验证OA转化产物抗肿瘤活性，首次研究了OA对卵巢癌细胞株IGROV1和人乳腺癌细胞株MDA-MB-231作用，通过细胞增殖抑制实验、用MTT法检测细胞活性，结果表明齐墩果酸可降低卵巢癌细胞株IGROV1和乳腺癌细胞MDA-MB-231细胞增殖能力并呈剂量依赖性，对肿瘤细胞株的半数有效抑制浓度化IC50 分别为36.58μg/mL和38.8μg/mL (P<0．01)。OA能抑制肿瘤细胞活性，并且OA对卵巢癌细胞株IGROV1抑制活性高于乳腺癌细胞MDA-MB-231。 在此基础上，转化产物108和1010对卵巢癌细胞株IGROV1和人乳腺癌细胞株MDA-MB-231的抑制作用也进行研究，MTT实验结果表明，转化产物对两株癌细胞也有抑制活性（P<0．01）。 总之，本文工作为进一步开展齐墩果酸类化合物结构改造和抗肿瘤活性的研究奠定了基础。 Oleanolic acid (OA) is a triterpenoid widely distributed in the nature which possesses various important bioactivities. OA also serves as aglycon of many natural saponins. However, the relatively weak activities and poor bioavailability hinder its clinical use. Firstly, poor water-solubility results in worse bioavailability. Secondly, compared with clinical antitumor drug, the antitumor effect of OA has a great difference, it is worse. Many fungi have ability to transform nature products into a variety of derivatives, and transformation conditions of fungi are simple. Attempt to obtain fungi strains able to biotransform OA, we carried out the following experiments: To investigate the biotransformation 0f OA by strains supplied firstly, we used one-step fermentation method to screen the aimed strains from 18 fungus strains stored in our laboratory. On the basis of the initial screening experiments, we found 5 aimed strains. The TLC results showed that the 5 fungi strains could transform OA into other components derivatives. Then we used two-step fermentation method as secondly screening. We repeated the five strains to do the experiments, analytical data of the results proved the transformation indeed. In the followed experiments work, we chose 1F-2 2 strain as large-scale transformation fungus from the aimed fungi. We got two biotransformation products of OA by 1F-2 2, and named those derivatives 108 and 1010. We found RP-HPLC separation conditions of product 108. The two products were characterized by ESI-MS. To verify the anti-tumor activity of biotransformation products of OA, we studied the inhibition effect of oleanolic acid on the ovarian carcinomas IGROV1 and breast cancer cell line MDA-MB-231 firstly. With an assay based on a tetrazolium dye (MTT), the effects of various concentrations of oleanolic acid on ovarian carcinomas IGROV1 and breast cancer cell line MDA-MB-231 were studied. MTT method was used to measure the tumor cells viability. Compared with the control group, oleanolic acid can significantly inhibit the viability of the ovarian carcinoma cells IGROV1 and MDA-MB-231 breast cancer cell line (P<0．01), IC50 values were 36.58μg/mL or 38.8μg/mL. Oleanolic acid can inhibit the malignant tumor cells viability, and inhibitory activity of OA to ovarian carcinomas IGROV1 was higher than to breast cancer cell line MDA-MB-231. On this basis, we studied the anti-tumor activity of the two derivatives of OA [called 108 (414 m/z) and 1010(340 m/z)]. It came to the conclusion that the two derivatives also showed potent inhibitory effect on the growth of these tumor cells（P<0．01）. Therefore, the results of studies will benefit the further investigating on the relationships of structures and antitumor activities of OA.

CsI(T1)晶体探测器APD读出的温度效应

对中国科学院近代物理研究所自行生长的铊激活碘化铯闪烁晶体CsI(T1)光输出及Hamamtsu公司生产的S8664-1010型雪崩光二极管(APD)增益对温度的依赖关系做了系统研究.结果表明,CsI(T1)晶体光产额在室温范围内随着温度的增加而增加,在-2℃—8℃温度范围内的平均温度系数为0.67%/℃,在8℃—25℃温度范围内的平均温度系数为0.33%/℃.而对所使用的APD,其增益在室温范围内的温度系数为-3.68%/℃(工作电压400V).APD结合CsI(T1)晶体在室温下对~(137)Cs的662keYγ射线的能量分辨可达5.1%.

中国东部中新世风尘沉积的发现及其研究意义

IEECAS SKLLQG

Temperature effects of CsI(Tl) crystal detector with APD readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/degrees C in the region from -2 degrees C to 8 degrees C, and by 0.33%/degrees C in the region from 8 degrees C to 25 degrees C, while the gain of the tested APD decreases by -3.68%/degrees C (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV gamma ray from Cs-137 radiation source.

关于强流ECR质子源氢等离子体发射光谱的诊断研究；OES diagnostics of H_2 plasma in an intense ECR proton source

本文通过发射光谱诊断方法,用H_2等离子体的辐射碰撞模型对连续溃入的微波功率和全永磁磁场约束下产生高密度的H_2等离子体进行光谱诊断,计算出一定放电条件下(微波功率200-700 W,压强0-2 Pa)H~+的密度为1010-1011 cm~(-3),另外讨论了实验中观察到的Balmer系氢原子发射光谱强度随放电条件的变化规律。

CSR外靶实验终端中CsI(Tl)晶体的测试；Test of CsI(Tl) Crystal at External Target Experimental Terminal of Cooling Storage Ring

为测量重离子加速器冷却储存环(HIRFL-CSR)的外靶实验终端上不同能量的γ射线,一种用于探测γ射线的高能量分辨的探测装置正在中国科学院近代物理研究所建设,该探测器由中国科学院近代物理研究所自行生长的铊激活的碘化铯CsI(Tl)晶体组成。与日本Hamamatsu公司生产的S8664-1010型雪崩光二极管(APD)耦合,测试其光输出的非均匀性和能量分辨,从测试结果给出了所需CsI(Tl)晶体合格的标准。目前已完成该γ探测球计划的六分之一,所提供的晶体合格率达94%以上。