The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.

A proposal for low cross-talk square-lattice photonic crystal waveguide intersection utilizing the symmetry of waveguide modes

We propose an approach to construct waveguide intersections with broad bandwidth and low cross-talk for square-lattice photonic crystals. by utilizing a vanishing overlap of the propagation modes in the waveguides created by defects which support dipole-like defect modes. The finite-difference time-domain method is used to simulate the waveguide intersection created in the two-dimensional square-lattice photonic crystals. Over a bandwidth of 30 nm with the center wavelength at 1300 nm, transmission efficiency above 90% is obtained with cross-talk below -30 dB. Especially, we demonstrate the transmission of a 500-fs pulse at 1.3 Am through the intersection, and the pulse after transmission shows very little distortion while the cross-talk remains at low level meantime. (c) 2006 Elsevier B.V. All rights reserved.

Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal

Inductively coupled plasma (ICP) etching of InP in Cl-2/BCl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional InP/InGaAsP photonic crystal. The etching mechanisms are discussed and the effect of plasma heating on wafer during etching is analyzed. It is shown that the balance between the undercut originating from plasma heating and the redeposition of sputtering on the side-wall is crucial for highly anisotropic etching, and the balance point moves toward lower bias when the ICP power is increased. High aspect-ratio etching at the DC bias of 203 V is obtained. Eventually, photonic crystal structure with nearly 90 degrees side-wall is achieved at low DC bias after optimization of the gas mixture.

Magnetotransport in two-dimensional electron gas: The interplay between spin-orbit interaction and Zeeman splitting

We investigate theoretically the interplay between Zeeman splitting, Rashba spin-orbit interaction (RSOI), and Dresselhaus spin-orbit interaction (DSOI) and its influence on the magnetotransport property of two-dimensional electron gas (2DEG) at low temperature. Our theoretical results show that the nodes of the beating patterns of the magnetoresistivity rho(xx) for 2DEG with RSOI or DSOI alone depend sensitively on the total spin splitting induced by these three spin splitting mechanisms. It is interesting to find that the eigenstates in the presence of RSOI alone are connected with those in the presence of DSOI alone but with opposite Zeeman splitting by a time-reversal transformation. Consequently, the magnetoresistivities exhibit exactly the same oscillation patterns for these two cases. For strong RSOI or DSOI alone, the magneto-oscillation of rho(xx) shows two distinct periods. For 2DEG with both RSOI and DSOI, the beating patterns vanish for equal RSOI and DSOI strengths and vanishing Zeeman splitting. They will appear again, however, when Zeeman splitting or the difference between RSOI and DSOI strengths increases.

Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy

InAs was deposited by molecular beam epitaxy (MBE) on a GaAs substrate with an intentional temperature gradient from centre to edge. Two-dimensional (2D) to three-dimensional (3D) morphology evolution was found along the direction in which the substrate temperature was decreasing. Quantum dots (QDs) with density as low as similar to 8 x 10(6) cm(-2) were formed in some regions. We attribute the morphological evolution to the temperature-dependent desorption of deposited indium and the intermixing between deposited indium and gallium from the buffer.

Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate

Quaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.

TEMPERATURE-DEPENDENCE OF THE LOW-FIELD MOBILITY OF MINIBAND CONDUCTION IN SUPERLATTICES

The existing interpretation of the T-1 temperature dependence of the low-field miniband conduction is derived from certain concepts of conventional band theory for band structures resulting from spatial periodicities commensurable with the dimensionalities of the system. It is pointed out that such concepts do not apply to the case of miniband conduction, where we are dealing with band structures resulting from a one-dimensional periodicity in a three-dimensional system. It is shown that in the case of miniband conduction, the current carriers are distributed continuously over all energies in a sub-band, but only those with energies within the width of the miniband contribute to the current. The T-1 temperature dependence of the low-field mobility is due to the depletion of these current-carrying carriers with the rise of temperature.

BROADENING OF THE EXCITONIC LINEWIDTH DUE TO SCATTERING OF 2-DIMENSIONAL FREE-CARRIERS

By photoluminescence measurements we find that at low temperature the linewidth of the excitonic luminescence broadens with increasing electron density in the wider well from a photoexcited type-I-type-II mixed GaAs/AlAs asymmetric double quantum well structure, which even makes the excitonic linewidth at 77 K larger than at 300 K above a certain excitation intensity. We verify that the broadening is due to the scattering of two-dimensional carriers to excitonic states. Based on the theory of the scattering of carriers to excitonic states, we calculate the broadening of the excitonic linewidth. Our experimental results are convincing for verifying the theoretical prediction. (C) 1995 American Institute of Physics.

A High-Efficiency Fiber-to-Waveguide Coupler with Low Polarization Dependence Using a Diluted Waveguide in InP Substrate with a 1.55μm Wavelength

We propose a fiber-to-waveguide coupler for side-illuminated p-i-n photodiodes to obtain high responsivity and low polarization dependence that is grown on InP substrate and is suitable for surface hybrid integration in low cost modules. The fiber-to-waveguide coupler is based on a diluted waveguide,which is composed of ten periods of undoped 120nm InP/80nm InGaAsP （1.05μm bandgap） multiple layers. Using the semi-vectorial three dimensional beam propagation method （BPM） with the central difference scheme,the coupling efficiency of fiber-to-waveguide under different conditions is simulated and studied,and the optimized conditions for fiber-to-waveguide coupling are obtained. For TE-like and TM-like modes,the calculated maximum coupling efficiency is higher than 94% and 92% ,respectively. The calculated polarization dependence is less than 0. ldB,showing good polarization independence.

Effects of Ionizing Radiation on Three-Dimensional Human Vessel Models: Differential Effects According to Radiation Quality and Cellular Development

Little is known about the effects of space radiation on the human body. There are a number of potential chronic and acute effects, and one major target for noncarcinogenic effects is the human vasculature. Cellular stress, inflammatory response, and other radiation effects on endothelial cells may affect vascular function. This study was aimed at understanding the effects of space ionizing radiation on the formation and maintenance of capillary-like blood vessels. We used a 3D human vessel model created with human endothelial cells in a gel matrix to assess the effects of low-LET protons and high-LET iron ions. Iron ions were more damaging and caused significant reduction in the length of intact vessels in both developing and mature vessels at a dose of 80 cGy. Protons had no effect on mature vessels up to a dose of 3.2 Gy but did inhibit vessel formation at 80 cGy. Comparison with gamma radiation showed that photons had even less effect, although, as with protons, developing vessels were more sensitive. Apoptosis assays showed that inhibition of vessel development or deterioration of mature vessels was not due to cell death by apoptosis even in the case of iron ions. These are the first data to show the effects of radiation with varying linear energy transfer on a human vessel model. (C) 2011 In Radiation Research Society

One-dimensional CaWO4 and CaWO4:Tb3+ nanowires and nanotubes: electrospinning preparation and luminescent properties

One-dimensional CaWO4 and CaWO4:Tb3+ nanowires and nanotubes have been prepared by a combination method of sol-gel process and electrospinning. X-Ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), low voltage cathodoluminescence (CL) and time-resolved emission spectra, as well as kinetic decays were used to characterize the resulting samples. The results of XRD, FT-IR, TG-DTA indicate that the CaWO4 and CaWO4: Tb3+ samples begin to crystallize at 500 degrees C with the scheelite structure. Under ultraviolet excitation and low-voltage electron beams excitation, the CaWO4 samples exhibit a blue emission band with a maximum at 416 nm originating from the WO42- groups, while the CaWO4:Tb3+ samples show the characteristic emission of Tb3+ corresponding to (D4-F6,5,4,3)-D-5-F-7 transitions due to an efficient energy transfer from WO42- to Tb3+.

One-Dimensional Ce3+- and/or Tb3+-Doped X-1-Y2SiO5 Nanofibers and Microbelts: Electrospinning Preparation and Luminescent Properties

One-dimensional X-1-Y2SiO5:Ce3+ and -Tb3+ nanofibers and quasi-one-dimensional X-1-Y2SiO5:Ce3+ and -Tb3+ microbelts have been prepared by a simple and cost-effective electrospinning process. X-ray powder diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry, transmission electron microscopy, high-resolution transmission electron microscopy, photoluminescence (PL), and cathodoluminescence spectra were used to characterize the samples. SEM results indicate that the as-prepared fibers and belts are smooth and uniform with a length of several tens to hundreds of micrometers, whose diameters decrease after being annealed at 1000 degrees C for 3 h. Under ultraviolet excitation and low-voltage electron beam excitation, the doped rare earth ions show their characteristic emission, that is, Ce3+ 5d-4f and Tb3+ D-5(4)-F-7(J) (J = 6, 5 4, 3) transitions, respectively.

Fabrication and Luminescence Properties of One-Dimensional CaMoO4: Ln(3+) (Ln = Eu, Tb, Dy) Nanofibers via Electrospinning Process

One-dimensional CaMoo(4):Ln(3+) (Ln = Eu, Tb, Dy) nanofibers have been prepared by a combination method of sol-gel and electrospinning process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), and low voltage cathodoluminescence (CL) as well as kinetic decays were used to characterize the resulting samples. SEM and TEM analyses indicate that the obtained precursor fibers have a uniform size, and the as-formed CaMoO4:Ln(3+) nanofibers consist of nanoparticles. Under ultraviolet excitation, the CaMoO4 samples exhibit a blue-green emission band with a maximum at 500 nm originating from the MoO42- groups. Due to an efficient energy transfer from molybdate groups to dopants, CaMoO4:Ln(3+) phosphors show their strong characteristic emission under ultraviolet excitation and low-voltage electron beam excitation.

Coordination-Induced Formation of One-Dimensional Nanostructures of Europium Benzene-1,3,5-tricarboxylate and Its Solid-State Thermal Transformation

Novel one-dimensional europium benzene-1,3,5-tricarboxylate compressed nanorods have been synthesized oil it large scale through direct precipitation in solution phase under moderate conditions without the assistance of any surfactant, catalyst, or template. The obtained nanorods have widths of about 50-100 not, thicknesses of 10-20 nm, and lengths ranging from a few hundred nanometers to several micrometers. X-ray powder diffraction. elemental analysis, Fourier transform infrared Studies, and thermogravimetric and differential thermal analysis show that the nanorods have the structural formula of Eu(1,3,5-BTC)center dot 6H(2)O. Upon UV excitation, these nanorods exhibit a highly efficient luminescence. which comes from the Eu3+ ions. Moreover, Eu2O3 nanorods Could also be obtained via a thermal decomposition method using the corresponding complex as a precursor. This synthetic route is promising for the preparation of other one-dimensional crystalline nanomaterials because of its simplicity and the low cost of the starting reagents.