186 resultados para High Order


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Smooth thin films of three kinds of nickel(II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on K9 glass substrate in the 300-600 nn wavelength region were measured. Optical constants (complex refractive index N = n + ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon (epsilon = epsilon(1) + i epsilon(2)), absorption coefficients a as well as reflectance R of thin films were then calculated at 405 nm. In addition, in order to examine the possible use of nickel(II)-azo complex thin film as an optical recording medium, one of the nickel(II)-azo complex thin film prepared on K9 glass substrate with an Ag reflective layer was also studied by atomic force microscopy and static optical recording. The results show that the nickel(II)-azo complex thin film is smooth and has a root mean square surface roughness of 2.25 nm, and the recording marks on the nickel(II)-azo complex thin film are very clear and circular, and their size can reach 200 nn or less. (c) 2006 Elsevier Ltd. All rights reserved.

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Only the first- order Doppler frequency shift is considered in current laser dual- frequency interferometers; however; the second- order Doppler frequency shift should be considered when the measurement corner cube ( MCC) moves at high velocity or variable velocity because it can cause considerable error. The influence of the second- order Doppler frequency shift on interferometer error is studied in this paper, and a model of the second- order Doppler error is put forward. Moreover, the model has been simulated with both high velocity and variable velocity motion. The simulated results show that the second- order Doppler error is proportional to the velocity of the MCC when it moves with uniform motion and the measured displacement is certain. When the MCC moves with variable motion, the second- order Doppler error concerns not only velocity but also acceleration. When muzzle velocity is zero the second- order Doppler error caused by an acceleration of 0.6g can be up to 2.5 nm in 0.4 s, which is not negligible in nanometric measurement. Moreover, when the muzzle velocity is nonzero, the accelerated motion may result in a greater error and decelerated motion may result in a smaller error.

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We present designs of high-efficiency compression grating based on total internal reflection (TIR) for picosecond pulse laser at 1053 nm. The setup is devised by directly etching gratings into the bottom side of a prism so that light can successfully enter (or exit) the compression grating. Dependence of the -1 order diffraction efficiencies on the constructive parameters is analyzed for TE- and TM-polarized incident light at Littrow angle by using Fourier modal method in order to obtain optimal grating structure. The electric field enhancement within the high-efficiency TIR gratings is regarded as another criterion to optimize the structure of the TIR gratings. With the criterion of high diffraction efficiency, low electric field enhancement and sufficient manufacturing latitude, TIR compression gratings with optimized constructive parameters are obtained for TE- and TM-polarized incident light, respectively. The grating for TE-polarized light exhibits diffraction efficiencies higher than 0.95 within 23 nm bandwidth and relatively low square of electric field enhancement ratio of 5.7. Regardless of the internal electric field enhancement, the grating for TM-polarized light provides diffraction efficiencies higher than 0.95 within 42 nm bandwidth. With compact structure, such TIR compression gratings made solely of fused silica should be of great interest for application to chirped pulse amplification (CPA) systems. (c) 2007 Elsevier B.V. All rights reserved.

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We report on the design of a high diffraction efficiency multi-layer dielectric grating with wide incident angle and broad bandwidth for 800 nm. The optimized grating can achieve > 95% diffraction efficiency in the first order at an incident angle of 5 degrees from Littrow and a wavelength from 770nm to 830 nm, with peak diffraction efficiency of > 99.5% at 800 nm. The electric field distribution of the optimized multi-layer dielectric grating within the gratings ridge is 1.3 times enhancement of the incidence light, which presents potential high laser resistance ability. Because of its high-efficiency, wide incident, broad bandwidth and potential high resistance ability, the multi-layer dielectric grating should have practical application in Ti:sapphire laser systems.

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We have made a set of chromosome-specific painting probes for the American mink by degenerate oligonucleotide primed-PCR (DOP-PCR) amplification of flow-sorted chromosomes. The painting probes were used to delimit homologous chromosomal segments among human, red fox, dog, cat and eight species of the family Mustelidae, including the European mink, steppe and forest polecats, least weasel, mountain weasel, Japanese sable, striped polecat, and badger. Based on the results of chromosome painting and G-banding, comparative maps between these species have been established. The integrated map demonstrates a high level of karyotype conservation among mustelid species. Comparative analysis of the conserved chromosomal segments among mustelids and outgroup species revealed 18 putative ancestral autosomal segments that probably represent the ancestral chromosomes, or chromosome arms, in the karyotype of the most recent ancestor of the family Mustelidae. The proposed 2n = 38 ancestral Mustelidae karyotype appears to have been retained in some modern mustelids, e.g., Martes, Lutra, ktonyx, and Vormela. The derivation of the mustelid karyotypes from the putative ancestral state resulted from centric fusions, fissions, the addition of heterochromatic arms, and occasional pericentric inversions. Our results confirm many of the evolutionary conclusions suggested by other data and strengthen the topology of the carnivore phylogenetic tree through the inclusion of genome-wide chromosome rearrangements. Copyright (C) 2002 S. KargerAG, Basel.

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Rhodopsin, encoded by the gene Rhodopsin (RH1), is extremely sensitive to light, and is responsible for dim-light vision. Bats are nocturnal mammals that inhabit poor light environments. Megabats (Old-World fruit bats) generally have well-developed eyes, while microbats (insectivorous bats) have developed echolocation and in general their eyes were degraded, however, dramatic differences in the eyes, and their reliance on vision, exist in this group. In this study, we examined the rod opsin gene (RH1), and compared its evolution to that of two cone opsin genes (SWS1 and M/LWS). While phylogenetic reconstruction with the cone opsin genes SWS1 and M/LWS generated a species tree in accord with expectations, the RH1 gene tree united Pteropodidae (Old-World fruit bats) and Yangochiroptera, with very high bootstrap values, suggesting the possibility of convergent evolution. The hypothesis of convergent evolution was further supported when nonsynonymous sites or amino acid sequences were used to construct phylogenies. Reconstructed RH1 sequences at internal nodes of the bat species phylogeny showed that: (1) Old-World fruit bats share an amino acid change (S270G) with the tomb bat; (2) Miniopterus share two amino acid changes (V104I, M183L) with Rhinolophoidea; (3) the amino acid replacement I123V occurred independently on four branches, and the replacements L99M, L266V and I286V occurred each on two branches. The multiple parallel amino acid replacements that occurred in the evolution of bat RH1 suggest the possibility of multiple convergences of their ecological specialization (i.e., various photic environments) during adaptation for the nocturnal lifestyle, and suggest that further attention is needed on the study of the ecology and behavior of bats.

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A novel fiber coated with novel sol-gel (5,11,17,23-tetra-tert-butyl-25,27-dihydroxy-26,28-diglycidyloxycalix[4]arene/hydroxy-terminated silicone oil; diglycidyloxy-C[4]/OH-TSO) was prepared for use with headspace solid-phase microextraction (HS-SPME) combined with gas chromatography (GC) and electron capture detection (ECD), which was applied in order to determine nine chlorobenzenes in soil matrices. Due to the improved fiber preparation, which increases the percentage of calixarene in the coating, the new calixarene fiber exhibits very high extraction selectivity and sensitivity to chlorine-substituted compounds. Various parameters affecting the extraction efficiency were optimized in order to maximize the sensitivity during the chlorobenzene analysis. Interferences from different soil matrices with different characteristics were investigated, and the amount extracted was strongly influenced by the matrix. Therefore, a standard addition protocol was performed on the real soil samples. The linear ranges of detection for the chlorobenzenes tested covered three orders of magnitude, and correlation coefficients > 0.9976 and relative standard deviations (RSD) < 8% were observed. The detection limits were found at sub-ng/g of soil levels, which were about an order of magnitude lower than those given by the commercial poly(dimethylsiloxane) (PDMS) coating for most of the compounds. The recoveries ranged from 64 to 109.6% for each analyte in the real kaleyard soil matrix when different concentration levels were determined over the linear range, which confirmed the reliability and feasibility of the HS-SPME/GC-ECD approach using the fiber coated with diglycidyloxy-C[4]/OH-TSO for the ultratrace analysis of chlorobenzenes in complex matrices.

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Coupled microcircular resonators tangentially coupled to a bus waveguide, which is between the resonators, are numerically investigated by the finite-difference time-domain technique. For symmetrically coupled microcircular resonators with refractive index of 3.2, radius of 2 mu m, and width of the bus waveguide of 0.4 mu m, a mode Q factor of the order of 105 is obtained for a mode at the frequency of 243 THz. An output coupling efficiency of as high as 0.99 is calculated for a mode with a Q factor ranging from 10(3) to 10(4). The mode Q factor is 2 orders larger than that of the modes confined in a single circular resonator tangentially coupled to the same bus waveguide. Furthermore, the high Q traveling modes in the coupled microcircular resonators are suitable for optical single processing.

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A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

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Coupling coefficient is an important parameter for distributed feedback lasers. Modified coupled-wave equations are used to calculate the effect of grating shape on coupling coefficient of the second-order gratings. Corresponding devices demonstrate that the maximum kink-free power per facet reaches 50 mW and the sidemode suppression ratio is 36 dB.

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Based oil rare equations of semiconductor laser, a symbolically-defined model for optical transmission system performance evaluation and network characterization in both time- and frequency domains is presented. The steady-state and small-signal characteristics, such as current-photon density curve, current-voltage curve, and input impedance, call be predicted from this model. Two important dynamic characteristics, second-order harmonic distortion and two-tone third-order intermodulation products, are evaluated under different driving conditions. Experiments show that the simulated results agree well with the published data. (c) 2007 Wiley Periodicals, Inc.

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Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films' microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9 x 10(0)Omega(-1) cm(-1), which was one order of magnitude higher than the reported 10(-3)-10(-1)Omega(-1)cm(-1). And PIN solar cells with nc-Si:H film as intrinsic thin-layer (ITO/n(+)-nc-Si:H/i-nc-Si:H/p-c-Si/Ag) were researched. The cell's performances were measured, the open-circuit voltage V-oc was 534.7 mV, short-circuit current I-sc was 49.24 mA (3 cm(2)) and fill factor FF was 0.4228. (c) 2006 Elsevier Ltd. All rights reserved.

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High quality InGaAsP/InGaAsP multiple quantum wells ( MQWs) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. A large bandgap energy shift of 46 nm and photoluminescence with FWHM less than 30 meV were obtained with a rather small mask width variation (15-30 mu m). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect W the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.

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A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

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gamma-Al2O3 films were grown on Si (10 0) substrates using the sources of TMA (AI(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. The effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. It has been found that the,gamma-Al2O3 film prepared at a temperature of 1000degreesC has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between 0, and Si substrate in the initial growth stage. However, under a temperature-varied multi-step process the properties Of gamma-Al2O3 film were improved. The films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. The uniformity of gamma-Al2O3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. In order to improve the crystalline quality, the gamma-Al2O3 films were annealed for I h in O-2 atmosphere. (C) 2002 Elsevier Science B.V. All rights reserved.