Discontinuous growth mechanisms of mode II crack under high-speed impact conditions

A recoverable plate impact testing technology has been used for studying the growth mechanisms of mode II crack. The results show that interactions of microcracks ahead of a crack tip cause the crack growth unsteadily. Failure mode transitions of materials were observed. Based on the observations, a discontinuous crack growth model was established. Analysis shows that the shear crack grows unsteady as the growth speed is between the Rayleigh wave speed c(R) and the shear wave speed c(s); however, when the growth speed approaches root 2c(s), the crack grows steadily. The transient microcrack growth makes the main crack speed to jump from subsonic to intersonic and the steady growth of all the sub-cracks leads the main crack to grow stably at an intersonic speed.

Subsonic interface crack with crack face contact

A steady-state subsonic interface crack propagating between an elastic solid and a rigid substrate with crack face contact is studied. Two cases with respective to the contact length are considered, i.e., semi-infinite and finite crack face contact. Different from a stationary or an open subsonic interface crack, stress singularity at the crack tip in the present paper is found to be non-oscillatory. Furthermore, in the semi-infinite contact case, the singularity of the stress field near the crack tip is less than 1/2. In the finite contact case, no singularity exists near the crack tip, but less than 1/2 singularity does at the end of the contact zone. In both cases, the singularity depends on the linear contact coefficient and the crack speed. Asymptotic solutions near the crack tip are given and analyzed. In order to satisfy the contact conditions, reasonable region of the linear contact coefficient is found. In addition, the solution predicts a non-zero-energy dissipation rate due to crack face contact.

颗粒增强铝基复合材料冲击疲劳裂纹扩展的行为和机理

本文针对发展新一代步兵战车复合材料履带板所面临的关键问题，结合其实际受载特点，设计制备了冲击疲劳实验加载装置，并着重从实验设计及机理分析上进行细致深入的探索，揭示了Al_2O_3/LC_4复合材料冲击疲劳破坏的微观过程和机理。首先分别对SiC_P/LC_4、Al_2O_(3P)/LC_4 及基体 LC_4 进行了显微组织的观察与定量分析，并对其拉伸、三点弯曲破坏过程进行了在位观察，结合其断裂形貌的观察与分析，揭示出颗粒增强铝基复合材料断裂破坏的根本原因是颗粒的聚集及脆性相在晶界的严重偏聚。针对这一结论，给材料制备单位提出工艺改进意见。对工艺改进后制备的复合材料进行常规力学性能的测试，结果表明，其拉伸性能明显优于改进前制备的相应材料。为了进行冲击疲劳的实验研究，在分析步兵战车履带板实际受载特点的基础上，自行设计制备了冲击疲劳实验的加载装置。主要包括主体框架和测量系统，前者与小型振动系统配合使用可以实现冲击能量为 0.3J、冲击频率为 1Hz、冲击速度为 0.6m/s 的多次冲击实验；后者可以准确记录下任意时刻的冲击载荷波形及冲击疲劳载荷的循环数。为了考察颗粒与加载速率对复合材料疲劳机理的影响，实验研究了 Al_2O_3/LC_4 复合材料和 LC_4 纯基体材料在冲击疲劳和常规疲劳过程中裂纹的扩展过程及扩展速率。综合结果发现：与LC_4纯基体材料相比，Al_2O_3/LC_4复合材料疲劳裂纹扩展得更为迅速。复合材料中，由于颗粒的加入，两种疲劳方式下袭纹都发生严重偏转；裂纹经过颗粒时，多数是绕过，少数是切过颗粒；冲击疲劳裂纹扩展速率明显高于常规疲劳裂纹扩展速率。纯基体材料中，两种加载方式下，裂纹基本都以穿晶的方式扩展，裂纹常常表现为小锯齿状；冲击疲劳裂纹尖端的塑性变形程度比常规疲劳更大；冲击疲劳裂纹比常规疲劳裂纹更曲折，表现出多尺度的锯齿状（Zig-Zag）特征；冲击疲劳裂纹扩展速率高于常规疲劳的裂纹扩展速率。在基本实验的基础上，进一步对断口及裂纹扩展途径进行了微观观察和定量分析，最后综合全文的实验和统计结果，讨论了颗粒增强铝基复合材料的冲击疲劳机理。复合材料疲劳裂纹扩展速率的提高主要与裂纹的偏转有关，裂纹更倾向于沿着颗粒与基体的界面扩展；两种材料的疲劳裂纹扩展速率均随加载速率的增加而增加，呈现加载速率的反作用。加载方式的改变，一方面，由于冲击情况下载荷持续时间降低，使裂纹扩展速率降低；另一方面，加载速率的提高使得断裂韧性值降低，材料变脆，裂纹扩展速率升高。这两个方面相互影响，相互竞争，决定实际的裂纹扩展速率。两种材料中，不同加载速率下的疲劳裂纹扩展的微观机制基本一致，没有明显的本质区别。

层片TiAl合金的微结构对力学行为的影响

本论文针对可能应用于叶片零部件的铸造全层片TiAl基合金进行了多方面的实验研究。目的着重于观测该材料的力学性能对微结构因素的敏感性及其失效行为，并以裂纹萌生为线索探讨其相关的物理和力学内禀机制的表征。研究工作涉及到多种跨越毫米尺度的宏－细－微观力学测试方法和技术，其中，新型试样的应力分析和可行性说明针对于脆怀板材试样并具有良好自对中能力的夹具设计是成功的。单调拉伸实验和拉一拉疲劳实验得到了所研究试样的基本力学性能和影响疲劳性能的微结构敏感因素，如晶粒取向、晶粒大小等。实验研究重点说明了层片取几因素对疲劳抗力的影响一与拉伸轴方向平行的晶粒具有最好的裂纹萌生抗力。扫描电镜和透射电镜下的原位拉伸实验得到了沿层片裂纹萌生的等征，这些等征包括：层片裂纹与拉伸轴夹角呈40°／60°／90°的方向倾向性、裂纹沿γ相真孪晶层片界面萌生的位置倾向性等。纳米压痕实验和原子力显微实验证了层片的弹性模量差异，为宏一细一微观分析提供了依据。分析和讨论工作针对于沿层片萌裂纹的方向的选择性和位置的倾向性等实验现象，以宏观界面力学方法和晶体学理论，侧重表征了与层间变形特性相关的力学和物理机制：（１）以模理量失配理论为基础提出了等效失配概念，得到瞪层片TiAl合金的等效失配度为0.16；（2）以界面能量释放率断裂准则为基础，提出了模式因子（TiAl,0.24）方法来评价拉、剪力的耦合作用；（3）根据以汤普森四面体所构筑的γ层间组合模型，并采用γ层片的惯习面间异类原子对数（NAT值）、穿层几何协调因子和穿层几何协调加和因子等方法分别表征其原子结构尺度下的界面结全强度和层间变形的位错协调性。分析和讨论重阐明了全层片TiAl有序合金的层间抗剪切能力较弱和γ层间真孪晶界面易于裂纹萌生等结果。

Numerical investigation of crack growth in concrete subjected to compression by the generalized beam lattice model

The beam lattice-type models, such as the Euler-Bernoulli (or Timoshenko) beam lattice and the generalized beam (GB) lattice, have been proved very effective in simulating failure processes in concrete and rock due to its simplicity and easy implementation. However, these existing lattice models only take into account tensile failures, so it may be not applicable to simulation of failure behaviors under compressive states. The main aim in this paper is to incorporate Mohr-Coulomb failure criterion, which is widely used in many kinds of materials, into the GB lattice procedure. The improved GB lattice procedure has the capability of modeling both element failures and contact/separation of cracked elements. The numerical examples show its effectiveness in simulating compressive failures. Furthermore, the influences of lateral confinement, friction angle, stiffness of loading platen, inclusion of aggregates on failure processes are respectively analyzed in detail.

Experimental Research On Fatigue Property Of Steel Rubber Vibration Isolator For Offshore Jacket Platform In Cold Environment

Jacket platform is the most widely used offshore platform. Steel rubber vibration isolator and damping isolation system are often used to reduce or isolate the ice-induced and seismic-induced vibrations. The previous experimental and theoretical studies concern mostly with dynamic properties, vibration isolation schemes and vibration-reduction effectiveness analysis. In this paper, the experiments on steel rubber vibration isolator were carried out to investigate the compressive properties and fatigue properties in different low temperature conditions. The results may provide some guidelines for design of steel rubber vibration isolator for offshore platform in a cold environment, and for maintenance and replacement of steel rubber vibration isolator, and also for fatigue life assessment of the steel rubber vibration isolator. (C) 2009 Elsevier Ltd. All rights reserved.

Dynamic phase-mapping of domain nucleation on MgO : LiNbO3 crystal by digital holographic interferometry

The quantitative phase-mapping of the domain nucleation in MgO:LiNbO3 crystals is presented by using the digital holographic interferometry. An unexpected peak phase at the beginning of the domain nucleation is observed and it is lowered as the spreading of the domain nucleus. The existence of the nucleus changes the moving speed of the domain wall by pinning it for 3s. Such in-situ quantitative analysis of the domain nucleation process is a key to optimizing domain structure fabrication.

Wavelength dependence of light-induced domain nucleation in MgO-doped congruent LiNbO3 crystal

Within the wavelength range from 351 to 799 nm, the different reductions of nucleation field induced by the focused continuous laser irradiation are achieved in the 5 mol % MgO-doped congruent LiNbO3 crystals. The reduction proportion increases exponentially with decreasing irradiation wavelength and decreases exponentially with increasing irradiation wavelength. At one given wavelength, the reduction proportion increases exponentially with increasing irradiation intensity. An assumption is proposed that the reduction of nucleation field is directly related to the defect structure of crystal lattice generated by the complex coaction of incident irradiation field and external electric field. (c) 2007 American Institute of Physics.

Primary and secondary threshold intensities of ultraviolet-laser-induced domain nucleation in nearly stoichiometric LiTaO3

The primary and secondary threshold intensities of ultraviolet-laser-induced preferential domain nucleation in nearly stoichiometric LiTaO3 is observed. The primary threshold is the minimum intensity to achieve the instantaneous preferential domain nucleation within the focus by the combined action of irradiation and electric fields. The secondary threshold is the minimum intensity to achieve the memory effect without any irradiation within the original focus. The space charge field created by the photoionization carriers is thought to be responsible for the instantaneous effect. The explanation based on the formation and transformation of extrinsic defect is presented for the memory effect. (c) 2008 American Institute of Physics.

High-temperature AlN interlayer for crack-free AlGaN growth on GaN

This paper presents a study of the transformation of high-temperature AlN (HT-AlN) interlayer (IL) and its effect on the strain relaxation of Al0.25Ga0.75N/HT-AlN/GaN. The HT-AlN IL capped with Al0.25Ga0.75N transforms into AlGaN IL in which the Al composition increases with the HT-AlN IL thickness while the total Ga content keeps nearly constant. During the HT-AlN IL growth on GaN, the tensile stress is relieved through the formation of V trenches. The filling up of the V trenches by the subsequent Al0.25Ga0.75N growth is identified as the Ga source for the IL transformation, whose effect is very different from a direct growth of HT-AlGaN IL. The a-type dislocations generated during the advancement of V trenches and their filling up propagate into the Al0.25Ga0.75N overlayer. The a-type dislocation density increases dramatically with the IL thickness, which greatly enhances the strain relaxation of Al0.25Ga0.75N. (c) 2008 American Institute of Physics.

Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

This paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.