Magnetoexcitonic optical absorption in semiconductors under strong magnetic fields and intense terahertz radiation in the Voigt configuration

The magnetoexcitonic optical absorption of a GaAs bulk semiconductor driven by a terahertz (THz) field is investigated numerically. The method of the solution of the initial-value problem, in combination with the perfect matched layer technique, is used to calculate the optical susceptibility, with Coulomb interaction, Landau quantization, and THz fields involved nonperturbatively. It shows that there appear replicas and sidebands of magnetoexciton of different Landau levels, which greatly enrich the magneto-optical spectrum in the presence of a driving THz field. Copyright (C) EPLA, 2008.

Excitonic optical absorption in semiconductors under intense terahertz radiation

The excitonic optical absorption of GaAs bulk semiconductors under intense terahertz (THz) radiation is investigated numerically. The method of solving initial-value problems, combined with the perfect matched layer technique, is used to calculate the optical susceptibility. In the presence of a driving THz field, in addition to the usual exciton peaks, 2p replica of the dark 2p exciton and even-THz-photon-sidebands of the main exciton resonance emerge in the continuum above the band edge and below the main exciton resonance. Moreover, to understand the shift of the position of the main exciton peak under intense THz radiation, it is necessary to take into consideration both the dynamical Franz-Keldysh effect and ac Stark effect simultaneously. For moderate frequency fields, the main exciton peak decreases and broadens due to the field-induced ionization of the excitons with THz field increasing. However, for high frequency THz fields, the characteristics of the exciton recur even under very strong THz fields, which accords with the recent experimental results qualitatively.

Intersubband optical absorption in a step asymmetric semiconductor quantum well driven by a terahertz field

The nonlinear optical absorption in a three-subband step asymmetric semiconductor quantum well driven by a strong terahertz (THz) field is investigated theoretically by employing the intersubband semiconductor-Bloch equations. We show that the optical absorption spectrum strongly depends on the intensity, frequency, and phase of the pump THz wave. The strong THz field induces THz sidebands and Autler-Townes splitting in the probe absorption spectrum. Varying the pump frequency can bring not only the new absorption peaks but also the changing of the energy separation of the two higher-energy levels. The dependence of the absorption spectrum on the phase of the pump THz wave is also very remarkable.

Spectral relationship of photoinduced refractive index and absorption changes in fulgide films

Fulgides are one kind of organic photochromic compound, which are famous for their thermal irreversibility. In this report, from the difference spectra of the absorption A() of one kind of pyrrylfulgide, the spectral refractive index change n() was calculated by the Kramers-Kronig relation (KKR), and a good correlation of theoretically derived values and the experimental values of the n measured by a modified Michelson interferometer was found. Further, it is demonstrated that it was possible to calculate the spectral dependence of diffraction efficiency from the easily accessible absorption changes. This method will be a useful tool for the characterization and optimization of fulgide films. The results show that the diffraction efficiency is high at 488 and 750 nm, where the absorption is very small, so we can realize non-destructive reconstruction.

Determination of dispersion and nonlinear coefficients of photonic crystal fibers by degenerated FWM method

使用四波混频测试光子晶体光纤的色散和非线性参数

PHOTOLUMINESCENCE INVESTIGATIONS OF CD1-XMNXTE UNDER HYDROSTATIC-PRESSURE

The photoluminescence of Cd1-xMnxTe with x=0.25, 0.40, and 0.60 is investigated at 77 K and different pressures. The pressure coefficients of the photoluminescence bands Cd0.75Mn0.25Te and Cd0.6Mn0.4Te are found to be positive and the magnitudes are about 8 X 10(-3) eV/kbar, which is in good agreement with the pressure coefficients of the interband transition. The pressure coefficient of the photoluminescence bands for Cd0.4Mn0.6Te is found to be -6 X 10(-3) eV/kbar, which is quite different from the pressure coefficient of the interband transition. The possible transition mechanism is discussed in terms of group theory and crystal field theory.

COMPARISONS OF PHASE TIMES WITH TUNNELING TIMES BASED ON ABSORPTION PROBABILITIES

The times spent by an electron in a scattering event or tunnelling through a potential barrier are investigated using a method based on the absorption probabilities. The reflection and transmission times derived from this method are equal to the local Larmor times if the transmission and reflection probability amplitudes are complex analytic functions of the complex potential. The numerical results show that they coincide with the phase times except as the incident electron energy approaches zero or when the transmission probability is too small. If the imaginary potential covers the whole space the tunnelling times are again equal to the phase times. The results show that the tunnelling times based on absorption probabilities are the best of the various candidates.