黄土沟壑区小流域不同地形下土壤微量元素分布特征

研究了黄土沟壑区小流域塬面、坡地、梯田和沟道土壤微量元素的剖面分布特征,以揭示不同地形条件下微量元素的有效性及地球化学特性.结果表明,不同土层土壤全量微量元素的变异系数均小于15%,为小变异土壤性质,有效态和吸附态铁和锰的变异系数均高于36%,为高度变异土壤性质;有效态和吸附态锌和铜属于中到高度变异.全量铁、锰和铜以沟道土壤较高,全锌、有效态和吸附态微量元素含量以塬面土壤较高.不同形态微量元素的剖面分布趋势取决于地形条件.不同地形下成土过程及不同地形条件所对应的土地利用方式造成了全量微量元素的差异,而土壤有机质含量的差异是不同地形条件下有效态和吸附态微量元素剖面分布特征不同的主要原因.

不同培肥措施下种植制度及撂荒对土壤微生物量碳氮的影响

以黄土高原南部半湿润易旱区已进行17年的田间定位试验为研究对象,研究了不同培肥措施(不施肥、施用氮磷钾及氮磷钾与有机肥配合施用)下两种种植制度(一年1熟及一年两熟)和撂荒对土壤微生物量碳、氮(SMBC、SMBN)及可溶性有机碳、氮(SOC、SON)等含量的影响。结果表明,与一年1熟的小麦-休闲种植制度相比,一年两熟小麦-玉米轮作提高了0~10cm土层SMBC、SMBN、有机碳(TOC)、全氮(TN)和土壤SOC、SON的含量,而对10~20cm土层上述测定指标影响不大。与不施肥(CK)或单施化肥处理(NPK)下小麦-休闲和小麦-玉米轮作方式相比,撂荒处理显著提高了0~10cm土层各测定指标的含量。不同培肥措施相比,氮磷钾配施有机肥显著提高了0~10cm、10~20cm土层SMBC、SMBN含量;NPK处理0~10cm土层SMBN含量显著增加,10~20cm土层SMBN和0~10cm、10~20cm土层SMBC含量增加但未达显著水平。不同培肥措施和种植制度对SMBC/TOC和SMBN/TN的比例无明显影响。

云南鲤属鱼类及种质资源保存

云市野生鲤鱼种娄为全国之冠。过去在渔业生产中，它们的产量曾占一定比重j现在种 群数量普遍减少，亟待保护 文中讨论了种质资源保存的意义和应采取的描箍。

IMPROVEMENT OF STRUCTURAL INSTABILITY OF THE ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET)

Three causes involved in the instability of the ISFET are proposed in this study. First, it is ascertained that hydroxyl group resident at the surface of the Si3N4 film or in the electrolyte solution is most active and subject to gain or loss of electrons. This is one of the main causes for ISFET structural instability. Secondly, the stability of the pH-sensitive FET varies with deposition conditions in the fabrication process of the ISFET. This proves to be another cause of ISFET instability. Thirdly, the pH of the measured solution varies with the measuring process and time, contributing to the instability, but is not a cause of the instability of the pH-ISFET itself. We utilized the technique of readjusting and controlling the ratio of hydroxyl groups to amine groups to enhance the stability of the ISFET. Our techniques to improve stability characteristics proved to be effective in practice.

Damage removal and strain relaxation in As+-implanted Si0.57Ge0.43 epilayers grown by gas source molecular beam epitaxy

The damage removal and strain relaxation in the As+-implanted Si0.57Ge0.43 epilayers were studied by double-crystal x-ray diffractometry and transmission electron microscopy. The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950 degrees C results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.

BACKGATING AND LIGHT SENSITIVITY IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Three different types of GaAs metal-semiconductor field effect transistors (MESFET) by employing ion implantation, molecular beam epitaxy (MBE) and low-temperature MBE (LT MBE) techniques respectively were fabricated and studied in detail. The backgating (sidegating) measurement in the dark and in the light were carried out. For the LT MBE-GaAs buffered MESFETs, the output resistance R(d) and the peak transconductance g(m) were measured to be above 50 k Omega and 140 mS/mm, respectively, and the backgating and light sensitivity were eliminated. A theoretical model describing the light sensitivity in these kinds of devices is given. and good agreement with experimental data is reached.