47 resultados para wave power


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This paper presents the electromagnetic wave propagation characteristics in plasma and the attenuation coefficients of the microwave in terms of the parameters n(e), v, w, L, w(b). The phi800 mm high temperature shock tube has been used to produce a uniform plasma. In order to get the attenuation of the electromagnetic wave through the plasma behind a shock wave, the microwave transmission has been used to measure the relative change of the wave power. The working frequency is f = (2 similar to 35) GHz (w = 2pif, wave length lambda = 15 cm similar to 8 mm). The electron density in the plasma is n(e) = (3 x 10(10) similar to 1 x 10(14)) cm(-3). The collision frequency v = (1 x 10(8) similar to 6 x 10(10)) Hz. The thickness of the plasma layer L = (2 similar to 80) cm. The electron circular frequency w(b) = eB(0)/m(e), magnetic flux density B-0 = (0 similar to 0.84) T. The experimental results show that when the plasma layer is thick (such as L/lambda greater than or equal to 10), the correlation between the attenuation coefficients of the electromagnetic waves and the parameters n(e), v, w, L determined from the measurements are in good agreement with the theoretical predictions of electromagnetic wave propagations in the uniform infinite plasma. When the plasma layer is thin (such as when both L and lambda are of the same order), the theoretical results are only in a qualitative agreement with the experimental observations in the present parameter range, but the formula of the electromagnetic wave propagation theory in an uniform infinite plasma can not be used for quantitative computations of the correlation between the attenuation coefficients and the parameters n(e), v, w, L. In fact, if w < w(p), v(2) much less than w(2), the power attenuations K of the electromagnetic waves obtained from the measurements in the thin-layer plasma are much smaller than those of the theoretical predictions. On the other hand, if w > w(p), v(2) much less than w(2) (just v approximate to f), the measurements are much larger than the theoretical results. Also, we have measured the electromagnetic wave power attenuation value under the magnetic field and without a magnetic field. The result indicates that the value measured under the magnetic field shows a distinct improvement.

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We demonstrated efficient laser action of a new ytterbium-doped oxyorthosilicate crystal Yb:LuYSiO5 ( Yb: LYSO) under high-power diode-pumping. The spectroscopic features and laser performance of the alloyed oxyorthosilicate crystal are compared with those of ytterbium-doped lutetium and yttrium oxyorthosilicates. In the continuous-wave laser operation of Yb: LYSO, a maximal slope efficiency of 96% and output power of 7.8 W were respectively achieved with different pump sources. The Yb: LYSO laser exhibits not only little sensitivity to the pump wavelength drift but also a broad tunability. By using a dispersive prism as the intracavity tuning element, we demonstrated that the continuous-wave Yb: LYSO laser exhibit a continuous tunability in the spectral range of 1014-1091 nm. (c) 2006 Optical Society of America.

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简要介绍了“十五”期问在广东省汕尾市研建的波浪能海水淡化系统的组成和工作原理。为了验证波浪能海水淡化装置运行的实用性和可靠性,在国内外波浪能海水淡化研究的基础上,对汕尾波浪能海水淡化装置进行了不同操作压力情况下的试验研究。研究结果表明,随着高压海水压力的升高,产出淡水量会明显增加,淡水质量提高,装置产出淡水的能耗较低。

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Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.

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A high-power continuous wave (cw) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor absorber mirror (SAM). The maximum average output power was 8.1 W and the optic-to-optic conversion efficiency was about 41 %. At the maximum incident pump power, the pulse width was about 8.6 ps and the repetition rate was 130 MHz. Experimental results indicated that this absorber was suitable for high power mode-locked solid-state lasers. (C) 2006 Elsevier Ltd. All rights reserved.

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A simple cw mode-locked solid-state laser, which is end-pumped by a low-power laser diode, was demonstrated by optimizing the laser-mode size inside the gain medium. The optimum ratio between mode and pump spot sizes inside the laser crystal was estimated for a cw mode-locked laser, taking into account the input pump power. Calculation and experiment have shown that the optimum ratio was about 3 when the pump power is 2 W, which is different from the value regularly used in passively mode-locked solid-state lasers. This conclusion is also helpful in increasing the efficiency of high-power ultrashort lasers. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

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Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.

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Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

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Experiments of autogenous laser full penetration welding between dissimilar cast Ni-based superalloy K418 and alloy steel 42CrMo flat plates with 3.5 mm thickness were conducted using a 3 kW continuous wave (CW) Nd:YAG laser. The influences of laser welding velocity, flow rate of side-blow shielding gas, defocusing distance were investigated. Microstructure of the welded seam was characterized by optical microscopy (OM), scanning electron microscopy (SEM) and X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). Mechanical properties of the welded seam were evaluated by microhardness and tensile strength testing. Results show that high quality full penetration laser-welded joint can be obtained by optimizing the welding velocity, flow rate of shielding gas and defocusing distance. The laser-welded seam have non-equilibrium solidified microstructures consisting of gamma-FeCr0.29Ni0.16C0.06 austenite solid solution dendrites as the dominant and very small amount of super-fine dispersed Ni3Al gamma' phase and Laves particles as well as MC needle-like carbides distributed in the interdendritic regions. Although the microhardness of the laser-welded seam was lower than that of the base metal, the strength of the joint was equal to that of the base metal and the fracture mechanism showed fine ductility. (c) 2007 Elsevier B.V. All rights reserved.

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The effect of the particle cover over the density interface between two layers of fluids and of the suspended solid particles in the upper turbulcnt layer on the turbulent entrainment has been studied experimentally. The entrainment distance D is a function of the time of power: D=kt, where =0.200-0.130p. For suspended particles in the upper layer and pure 2-layer fluid is equal to 0.200, but the value of k for the suspended particles is smaller than that for the pure 2-layer fluid. The non-dimensional entrainment velocity is E=KRiln, where n=1.50+0.93 p. It is shown that the particle cover over the interface changes the power of Ril in the entrainment and hinders the turbulent entrainment. The variation rule of E for the suspended particles is the same as that for the pure 2-layer fluid, but the K value of the former is smaller than that of the latter. The turbulent mixing mechanism has been discussed.

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Nonlinear X-wave formation at different pulse powers in water is simulated using the standard model of nonlinear Schrodinger equation (NLSE). It is shown that in near field X-shape originally emerges from the interplay between radial diffraction and optical Kerr effect. At relatively low power group-velocity dispersion (GVD) arrests the collapse and leads to pulse splitting on axis. With high enough power, multi-photon ionization (NIPI) and multi-photon absorption (MPA) play great importance in arresting the collapse. The tailing part of pulse is first defocused by MPI and then refocuses. Pulse splitting on axis is a manifestation of this process. Double X-wave forms when the split sub-pulses are self-focusing. In the far field, the character of the central X structure of conical emission (CE) is directly related to the single or double X-shape in the near field. (c) 2007 Elsevier B.V. All rights reserved.