73 resultados para surface topography measurement


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Topography of a granite surface has an effect on the vertical positioning of a wafer stage in a lithographic tool, when the wafer stage moves on the granite. The inaccurate measurement of the topography results in a bad leveling and focusing performance. In this paper, an in situ method to measure the topography of a granite surface with high accuracy is present. In this method, a high-order polynomial is set up to express the topography of the granite surface. Two double-frequency laser interferometers are used to measure the tilts of the wafer stage in the X- and Y-directions. From the sampling tilts information, the coefficients of the high-order polynomial can be obtained by a special algorithm. Experiment results shows that the measurement reproducibility of the method is better than 10 nm. (c) 2006 Elsevier GmbH. All rights reserved.

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Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal annealing (RTA) has been investigated by using photoluminescence (PL), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), An increase in PL intensity of up to 10 times was observed after sulfur passivation and RTA treatment compared to unpassivated InP surface. XPS measurement results show that introduction of RTA process can enhance the sulfur remaining on the passivated surface to bond to indium but no evidence of S-P bond is noticeable. Passivation enhancement mechanism is discussed.

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The hydroxyapatite (HA) nanocrystals of 100-200 nm in length and 20-30 nm in width were hydrothermally synthesized by the reaction of phosphoric acid and calcium hydroxide. Lactic acid oligomer surface grafted HA(op-HA) nanoparticles were obtained by oligomeric lactic acid with a certain molecular weight grafting onto the HA surface to form a Ca carboxylate bond in the absence of any catalyst. The op-HA was further blended with poly(lactide-co-glycolide) (PLGA) to prepare the nanocomposite of op-HA/PLGA. FTIR, TGA, ESEM and EDX were used to analyze grafting reaction, the graft ratio of op-HA, surface topography and calcium deposition of the composites, respectively. The rabbit osteoblasts were seeded and cultured on the surface of composites in vitro. The cell morphology, adhesion, proliferation and gene expression were evaluated with FITC staining, NIH image J software and the analysis of real-time PCR, respectively. The results show that the graft ratio of op-HA is 8.3% (mass fraction). The op-HA/PLGA nanocomposite possessed more suitable surface properties, including roughness and plenty of calcium and phosphor. It exhibited better cell adhesion, spreading and proliferation of rabbit osteoblasts, compared to pure PLGA.

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The mean sea surface heights (sea surface topography) of the South China, East China, Yellow and Bohai Seas are derived from an ocean general circulation model and surface air pressure. The circulation model covers the global oceans, with fine grid (1/6degrees) covering the East Asian marginal seas and coarse grid (31) covering the rest part of the global oceans. The result shows that the China 1985 National Altitude Datum is 24.7 cm above the me-an sea surface height of the world oceans. The mean sea surface in the coastal ocean adjacent to China is higher in the south than in the north. Intercomparison of the model results with the geodetic leveling measurements at 28 coastal tidal stations shows a standard deviation of 4.8 cm and a fitting coefficient of 95.3%. After correction through linear regression, the standard deviation is reduced to 4.5 cm. This indicates that the accuracy of model results is sufficient for practical application. Based on the model results, the mean sea surface heights for the study area with a resolution of 1/6 degree are given. This result also links the mean sea levels at islands with those on the mainland coast and gives the mean sea surface heights at tidal stations in the Taiwan Island, the Dongsha Islands, the Yisha Islands and the Nansha Islands relative to the China 1985 National Altitude Datum.

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Electrowetting is one of the most effective methods to enhance wettability. A significant change of contact angle for the liquid droplet can result from the surface microstructures and the external electric field, without altering the chemical composition of the system. During the electrowetting process on a rough surface, the droplet exhibits a sharp transition from the Cassie-Baxter to the Wenzel regime at a low critical voltage. In this paper, a theoretical model for electrowetting is put forth to describe the dynamic electrical control of the wetting behavior at the low voltage, considering the surface topography. The theoretical results are found to be in good agreement with the existing experimental results. (c) Koninklijke Brill NV, Leiden, 2008.

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Fluid transportation in microfluidic system could be benefit from the slip on solid-liquid interface. Slip length on many kinds of hydrophilic/hydrophobic surfaces have been measured recently. The two common-used experimental methods for boundary slip measurement include: (1) surface force measurement, such as surface force apparatus (SFA), atom force microscope (AFM), and (2) velocity measurement, like microPIV/PTV (Particle image velocimetry / Particle tracking velocimetry), total internal reflection velocimetry (TIRV). However, the measured results are rather scattered, larger measured slip lengths were reported by microPIV/PTV experiments. In this paper, we will investigate the deviations of the measured slip length on smooth hydrophilic surface. After measuring detailed velocity profiles very close to hydrophilic glass wall, we give a discussion on the effects influencing the slip measurements.

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表面形貌干涉测量技术是一种高精度的非接触式测量技术,在工业生产和科学研究中具有广泛的应用。提出一种实时测量表面形貌的正弦相位调制干涉测量新技术。该技术用激光二极管作光源,用自制的高速图像传感器探测干涉信号,通过信号处理电路实时解相得到被测表面所对应的相位分布,实时分析相位获得物体表面形貌。该技术消除了光强和部分外界干扰的影响,提高了系统的测量精度。楔形光学平板表面形貌的测量结果表明,测量点为60×60个的情况下,测量时间小于8.2 ms,重复测量精度(RMS)为4.3 nm。

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正弦相位调制(SPM)干涉测量技术用于表面形貌测量时, 需要帧速高于300 frame/s的图像传感器, 同时要求调制信号频率与图像传感器帧速成确定的整数倍关系。提出一种基于低速CCD(30 frame/s)的帧速可调的高速图像传感技术, 通过控制每帧像素总数提高CCD帧速, 研制出一种高帧速图像传感器, 帧速可达300~1600 frame/s, 且每帧大小连续可调。将该CCD传感器用于正弦相位调制干涉泰曼-格林干涉仪, 测量镀膜玻璃板表面形貌, 当CCD图像传感器的帧速与调制信号频率呈16, 8, 4

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提出一种实时测量表面形貌的正弦相位调制半导体激光干涉仪。利用实时相位检测电路,从正弦相位调制干涉信号中解出被测量物体表面形貌的相位。在实验中,测量了楔形光学平板的表面形貌,对表面形貌上的60

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This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical vapour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at similar to 3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.

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The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al2O3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 degrees C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 degrees C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given. (c) 2004 Elsevier B.V. All rights reserved.

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用电子束热蒸发方法镀制了Al2O3材料的单层膜,对它们在空气中进行了250~400℃的高温退火。对样品的透射率光谱曲线进行了测量,计算了样品的消光系数、折射率和截止波长。通过X射线衍射仪(XRD)测量分析了薄膜的微观结构,采用表面轮廓仪测量了样品的表面均方根粗糙度。结果发现随着退火温度的提高光学损耗下降,薄膜结构在退火温度为400℃时仍然为无定形态,样品的表面粗糙度随退火温度的升高而增加。引起光学损耗下降起主导作用的是吸收而不是散射,吸收损耗的下降主要是由于退火使材料吸收空气中的氧而进一步氧化,从而使薄膜

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研究了沉积温度对热舟蒸发氟化镧薄膜结构和光学性能的影响,沉积温度从200℃上升到350℃,间隔为50℃.采用分光光度计测量了样品的透射率和反射率光谱曲线,并在此基础上进行了光学损耗、光学常数以及带隙和截止波长的计算.采用表面轮廓仪进行了表面形貌和表面粗糙度的标定,采用X射线衍射(XRD)方法测量了不同沉积温度下样品的微结构.发现在短波长波段,随着沉积温度的升高,光学损耗增加,晶粒尺寸增大,表面粗糙度略有增加.不过散射损耗在光学损耗中所占比例均很小,光学损耗的增加主要由吸收损耗引起.随着沉积温度的升高,折射率与消光系数增大,带隙变小,相对应的截止波长向长波方向移动.

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Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical vapor deposition. Atomic force microscopy has been applied to investigate the evolution of surface topography of these films. According to the fractal analysis I it was found that, the growth of Si film deposited on glass substrate is the zero-diffused stochastic deposition; while for the film on Si substrate, it is the finite diffused deposition on the initial growth stage, and transforms to the zero-diffused stochastic deposition when the film thickness reaches a certain value. The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates. The data of Raman spectra approve that, on the glass substrate, the a-Si: H/mu c-Si:H transition is related to the critical film thickness. Different substrate materials directly affect the surface diffusion ability of radicals, resulting in the difference of growth modes on the earlier growth stage.

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A carbothermal hydrogen reduction method was employed for the preparation of activated carbon supported bimetallic carbide. The resultant samples were characterized by BET surface area measurement, X-ray diffraction, and temperature-programmed reduction-mass spectroscopy. The results showed that nanostructured beta-Mo2C can be formed on the activated carbon by carbothermal hydrogen reduction above 700 degreesC. The particle sizes of beta-Mo2C increase with increasing reaction temperatures and Mo loading. The bimetallic CoMo carbide can be synthesized by the carbothermal hydrogen reduction even around 600 degreesC. The bimetallic CoMo carbide is from carbothermal hydrogen reduction of CoMoO4 precursor and is easily formed when the Co/Mo molar ratio is 1.0. Separation of the bimetallic CoMo carbide phase into Mo carbide and Co metal occurs when the temperature of the reduction is above 700 degreesC. The addition of a second metal such as Co and Ni, decreases the formation temperature of carbide because the second metal promotes formation of CHx species from reactive carbon atoms or groups on carbon material and hydrogen, which further carburizes oxide precursors. (C) 2003 Elsevier Science Ltd. All rights reserved.