Effects of wall temperature on boundary layer stability over a blunt cone at Mach 7.99

Effects of wall temperature on stabilities of hypersonic boundary layer over a 7-degree half-cone-angle blunt cone are studied by using both direct numerical simulation (DNS) and linear stability theory (LST) analysis. Four isothermal wall cases with Tw/T0= 0.5, 0.7, 0.8 and 0.9, as well as an adiabatic wall case are considered. Results of both DNS and LST indicate that wall temperature has significant effects on the growth of disturbance waves. Cooling the surface accelerates unstable Mack II mode waves and decelerates the first mode (Tollmien–Schlichting mode) waves. LST results show that growth rate of the most unstable Mack II mode waves for the cases of cold wall Tw/T0=0.5 and 0.7 are about 45% and 25% larger than that for the adiabatic wall, respectively. Numerical results show that surface cooling modifies the profiles of rdut/dyn and temperature in the boundary layers, and thus changes the stability haracteristic of the boundary layers, and then effects on the growth of unstable waves. The results of DNS indicate that the disturbances with the frequency range from about 119.4 to 179.1 kHz, including the most unstable Mack modes, produce strong mode competition in the downstream region from about 11 to 100 nose radii. And adiabatic wall enhances the amplitudes of disturbance according to the results of DNS, although the LST indicates that the growth rate of the disturbance of cold wall is larger. That because the growth of the disturbance does not only depend on the development of the second unstable mode.

Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

The effects, caused by the process of the implantation of nitrogen in the buried oxide layer of SIMOX wafer, on the characteristics of partially depleted silicon-on-insulator nMOSFET have been studied. The experimental results show that the channel electron mobilities of the devices fabricated on the SIMON (separation by implanted oxygen and nitrogen) wafers are lower than those of the devices made on the SIMOX (separation by implanted oxygen) wafers. The devices corresponding to the lowest implantation dose have the lowest mobility within the range of the implantation dose given in this paper. The value of the channel electron mobility rises slightly and tends to a limit when the implantation dose becomes greater. This is explained in terms of the rough Si/SiO2 interface due to the process of implantation of nitrogen. The increasing negative shifts of the threshold voltages for the devices fabricated on the SIMON wafers are also observed with the increase of implanting dose of nitrogen. However, for the devices fabricated on the SIMON wafers with the lowest dose of implanted nitrogen in this paper, their threshold voltages are slightly larger on the average than those prepared on the SIMOX wafers. The shifts are considered to be due to the increment of the fixed oxide charge in SiO2 layer and the change of the density of the interface-trapped charge with the value and distribution included. In particular, the devices fabricated on the SIMON wafers show a weakened kink effect, compared to the ones made on the SIMOX wafers.

Effect of reflectivity at the interface of oxide layer on transverse mode control in oxide confined vertical-cavity surface-emitting lasers

The transverse mode control in oxide confined vertical-cavity surface-emitting lasers is discussed by modeling the dielectric aperture as a uniform waveguide and an extra reflectivity at the oxide layer. The phase of the extra reflectivity and the refractive index step can be adjusted to change the mode threshold gain. We calculate the lateral refractive index step from the mode wavelength difference between aperture and perimeter modes, and compare it with that obtained from the weighted average index. The mode reflectivity in terms of the lateral optical confinement factor at the oxide layer is considered in calculating the threshold gain for transverse modes. The numerical results show that higher transverse modes can be suppressed by adjusting the position of a thin AlAs-oxide layer inside a three-quarter-wave layer in the distributed Bragg reflector. (C) 1998 American Institute of Physics. [S0021-8979(98)04007-9].

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers

The influence of lateral propagating modes on the threshold current and the spontaneous emission factor in selectively oxidized vertical cavity surface-emitting lasers (VCSELs) is investigated based on the mode behaviors of lateral propagating modes and the rate equation model. The numerical results show that the lateral propagating modes may be trapped in the aperture region for the selectively oxidized VCSEL with two oxide layers, one above and one below the active region. The output characteristics of VCSELs can be affected due to the reabsorption of the quasitrapped lateral propagating modes. A lower threshold current can be expected for a VCSEL with double oxide layers than that with a single oxide layer. The numerical results of rate equations also show that a larger spontaneous emission factor can be obtained by fitting the output-input curves for the VCSEL with double oxide layers. (C) 1999 American Institute of Physics. [S0021-8979(99)07919-0].

Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 mu m. A characteristic temperature (T-0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. (C) 1998 American Institute of Physics. [S0003-6951(98)01352-7].

The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers

The behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (VCSELs). The results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the VCSELs with sufficient thick double oxide layers. So the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. Ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized VCSELs with double oxide layers. The results agree very well with the reported measurements and are inversely proportional to the lateral index step.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Partial oxidation of ethane to syngas over nickel-based catalysts modified by alkali metal oxide and rare earth metal oxide

The catalytic activity, thermal stability and carbon deposition of various modified NiO/gamma-Al2O3 and unmodified NiO/gamma-Al2O3 catalysts were investigated with a flow reactor, XRD, TG and UVRRS analysis. The activity and selectivity of the NiO/gamma-Al2O3 catalyst showed little difference from those of the modified nickel-based catalysts. However, modification with alkali metal oxide (Li, Na, K) and rare earth metal oxide (La, Ce, Y, Sm) can improve the thermal stability of the NiO/gamma-Al2O3 and enhance its ability to suppress carbon deposition during the partial oxidation of ethane (POE). The carbon deposition contains graphite-like species that were detected by UVRRS. The nickel-based catalysts modified by alkali metal oxide and rare earth metal oxide have excellent catalytic activities (C2H6 conversion of similar to 100%, CO selectivity of similar to 94%, 7x 10(4) l/(kg h), 1123 K), good thermal stability and carbon-deposition resistance.

可压平面混合层稳定性分析及数值模拟

可压平面混合层是包含复杂多时空尺度运动的非定常流体力学部问题，具有深刻的理论意义和广泛的应用背景。针对该问题所涉及内容的多面性，本文的目的是，基于高精度、高分辨率数值算法的构造、发展和数值行为分析，采用线性稳定性分析和直接数值模拟方法。从理论和计算两方面集中研究压缩性效应、粘性效应、初值效应以及燃烧反应放热效应等对可压平面混合层早期稳定性行为和大尺度拟序涡结构非线性演化的影响。以混合层已有研究成果的分析和综述为开端，论文主体共包括四部分：第一部分是可压平面混合层时间/空间模式数值线性稳定性分析。实现了高精度对称紧致差分格式（SCD）对可压粘性扰动线性稳定性边值问题的求解，对导出的线性和非线性离散特征值问题，提出了两个高效局部解法。研究涉及二维/三维扰动波、无粘/粘性扰动波、特征函数和特征值谱、第一/第二模态、超声速快/慢模态、速度比和密度比等。验证了对流Mach数Mc为一个合理的压缩性参数。指出压缩性效应和粘性效应对最不稳定扰动波的波数（频率）和增长率呈相拟的抑制作用，且时间模式稳定性分析结果在许多方面是可信的。从随机和线性扰动场出发，采用高精度五阶迎风紧致和六阶对称紧致混合差分算法（UCD5/SCD6）对可压平面混合层的稳定性特征进行了直接数值模拟，揭示了初始主导线性扰动与一些实际涡结构非线性作用形态间的内在关联，印证了线性稳定性分析方法的合理性和有效性。第二部分是高精度迎风紧致差分格式（UCD）时空全离散数值行为分析。导出了其一维/二维一般色散表达式。研究表明，UCD格式在高波数区具有内在的全离散耗散和色散特性；其数值群速度的快/慢特征可因CFL数不同而改变；在稳定CFL数下简单附加人工粘性可强化UCD格式在高波数区的耗散量；提高时间精度可放宽稳定CFL数限制；UCD格式的二维全离散色散介质中存在三个不同性质的数值波，其全离散稳定性由数值声波主控。第三部分实现了高精度UCD5/SCD6差分算法对空间发展可压平面混合层的直接数值模拟。通过亚谐扰动波的个数和扰动频率的控制，捕捉到了基频涡的饱和、一次和二次对并等现象，显示了大尺度涡结构与入中初始扰动方式之间的内在联系。利用参数Mc观察了压缩性效应对大尺度涡空间演化及其相互作用的影响。第四部分实现了高精度UCD5/SCD6差分算法对非预混扩散火焰化学反应平面混合层的直接数值模拟。研究指出，放热效应可抑制和延迟涡的形成，使基频涡卷拉伸甚至丧失，混合层Reynolds 应力ρu'v'和流向速度波动关联项u'v'下降，以致涡结构与外流动量交换和标量输运减少，脉动输运能力被削弱，从而混合效率、产物生成率和混合层增长率下降，放热主要通过膨胀效应和斜压效应来抑制大尺度涡的演化。

Quasi-hexagonal ordered arrays of FePt nanoparticles prepared by a micellar method

Hexagonally ordered arrays of magnetic FePt nanoparticles on Si substrates are prepared by a self assembly of diblock copolymer PS-b-P2VP in toluene, a dip coating process and finally plasma treatment. The as-treated FePt nanoparticles are covered by an oxide layer that can be removed by a 40 s Ar+ sputtering. The effects of the sequence of adding salts on the composition distribution are revealed by x-ray photoelectron spectroscopy measurements. No particle agglomeration is observed after 600 degrees C annealing for the present ordered array of FePt nanoparticles, which exhibits advantages in patterning FePt nanoparticles by a micellar method. Moreover, magnetic properties of the annealed FePt nanoparticles at room temperature are investigated by a vibrating sample magnetometer.

Multi-channel micro neural probe fabricated with SOI

Silicon-on-insulator (SOI) substrate is widely used in micro-electro-mechanical systems (MEMS). With the buried oxide layer of SOI acting as an etching stop, silicon based micro neural probe can be fabricated with improved uniformity and manufacturability. A seven-record-site neural probe was formed by inductive-coupled plasma (ICP) dry etching of an SOI substrate. The thickness of the probe is 15 mu m. The shaft of the probe has dimensions of 3 mmx100 mu mx15 mu m with typical area of the record site of 78.5 mu m(2). The impedance of the record site was measured in-vitro. The typical impedance characteristics of the record sites are around 2 M Omega at 1 kHz. The performance of the neural probe in-vivo was tested on anesthetic rat. The recorded neural spike was typically around 140 mu V. Spike from individual site could exceed 700 mu V. The average signal noise ratio was 7 or more.

A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration

A novel Si-based metal-oxide-semiconductor (MOS) electrooptic phase modulator including two shunt oxide layer capacitors integrated on a silicon-on-insulator (SOI) waveguide is simulated and analyzed. The refractive index near the two gate oxide layers is modified by the free carrier dispersion effect induced by applying a positive bias on the electrodes. The theoretical calculation of free carrier distribution coupled with optical guided mode propagation characteristics has been carried out. The influence of the structure parameters such as the width and the doping level of the active region are analyzed. A half-wave voltage V-pi = 4 V is demonstrated with an 8-mm active region length and a 4-mu m width of an inner rib under an accumulation mode. When decreasing the inner rib width to 1 mu m, the phase modulation efficiency is even higher, and the rise and fall times reach 50 and 40 ps, respectively, with a 1.0 x 10(17) cm(-3) doping level in the active region.

The microstructure and its high-temperature annealing behaviours of a-Si : O : H film

The microstructure and its annealing behaviours of a-Si:O:H film prepared by PECVD are investigated in detail using micro-Raman spectroscopy, X-ray photoelectron spectroscopy and Infrared absorption spectroscopy. The results indicate that the as-deposited a-Si:O:H film is structural inhomogeneous, with Si-riched phases surrounded by O-riched phases. The Si-riched phases are found to be nonhydrogenated amorphous silicon (a-Si) clusters, and the O-riched phases SiOx:H (x approximate to 1. 35) are formed by random bonding of Si, O and H atoms. By high-temperature annealing at 1150 degreesC, the SiOx:H (x approximate to 1.35) matrix is shown to be transformed into SiO2 and SiOx ( x approximate to 0.64), during which all of the hydrogen atoms in the film escape and some of silicon atoms are separated from the SiOx:H ( x approximate to 1.35) matrix; The separated silicon atoms are found to be participated in the nucleation and growth processes of solid-phase crystallization of the a-Si clusters, nano-crystalline silicon (ne-Si) is then formed. The microstructure of the annealed film is thereby described with a multi-shell model, in which the ne-Si clusters are embedded in SiOx (x = 0.64) and SiO2. The former is located at the boundaries of the nc-Si clusters, with a thickness comparable with the scale of nc-Si clusters, and forms the transition oxide layer between the ne-Si and the SiO2 matrix.

Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET

The mobility of channel electron, for partially depleted Sol nMOSFET in this paper, decreases with the increase of implanted fluorine dose in buried oxide layer. But, the experimental results also show that it is larger for the transistor corresponding to the lowest implantation dose than no implanted fluorine in buried layer. It is explained in tern-is of a "lubricant" model. Mien fluorine atoms are implanted in the top silicon layer, the mobility is the largest. In addition, a positive shift of threshold voltage has also been observed for the transistors fabricated on the Sol wafers processed by the implantation of fluorine. The causes of all the above results are discussed.