四程放大自动准直系统数学模型研究

针对高功率激光装置四程放大系统的特点,利用矩阵光学原理,建立了四程放大准直系统的数学模型;基于此模型,设计了四程放大系统的准直调整方案;得出了近、远场偏移量与调整量关系的解析解.

高功率激光装置光束准直系统新型远场监测技术

利用高功率激光装置空间滤波器小孔成像和取样光栅的衍射,设计出一套新型光路远场监测方案,并且在实验平台上进行了实验验证.实验结果表明:相对传统的远场监测方法,该远场监测系统通过侧面离轴光栅取样灵活利用空间,其调整平均误差为空间滤波器小孔直径0.9%,能够满足准直系统远场调整精度(<小孔直径5%)的要求.

Laser beam automatic alignment in multipass amplifier

A laser beam automatic alignment system is applied in a multipass amplifier of the SG-III prototype laser. Considering the requirements of the SG-III prototype facility, by combining the general techniques of the laser beam automatic alignment system, according to the image relayed of the pinholes in the spatial filter, and utilizing the optical position and the spatial distribution of the four pinholes of the main spatial filter in the multipass amplifier of the SG-III prototype, a reasonable and optimized scheme for automatic aligning multipass beam paths is presented. It is demonstrated on the multipass amplifier experimental system. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

HIRFL微束辐照装置偏转磁铁的安装准直；Alignment of Dipole Magnet in Micro-beam Line of HIRFL

微束辐照装置是将辐照样品的束斑缩小到μm量级,能够对辐照粒子进行准确定位和精确计数的实验平台,是开展辐照材料学、辐照生物学、辐照生物医学和微加工的有力工具。μm量级的束流对设备的准直安装也提出了极高的要求,对于HIRFL系统微束线上的二极磁铁,由于其所在位置的空间相当狭小,使得设计就位时磁铁的位置及角度与地面做基准时的不同,这给安装准直工作带来了挑战。通过引入变化的基准坐标值的办法,有效解决了这一难题,使全部磁铁安装误差都控制在了要求的公差范围之内。

Split-aperture laser pulse compressor design tolerant to alignment and line-density differences

We introduce a four-pass laser pulse compressor design based on two grating apertures with two gratings per aperture that is tolerant to some alignment errors and, importantly, to grating-to-grating period variations. Each half-beam samples each grating in a diamond-shaped compressor that is symmetric about a central bisecting plane. For any given grating, the two half-beams impinge on opposite sides of its surface normal. It is shown that the two split beams have no pointing difference from paired gratings with different periods. Furthermore, no phase shift between half-beams is incurred as long as the planes containing a grating line and the surface normal for each grating of the pair are parallel. For grating pairs satisfying this condition, gratings surfaces need not be on the same plane, as changes in the gap between the two can compensate to bring the beams back in phase. © 2008 Optical Society of America.

Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well

We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-xSbx/In-y Ga1-yAs)/GaAs bilayer quantum well (BQW) structures. It is shown that the growth temperature of the wells and the sequence of layer growth have significant influence on the interface quality and the subsequent photoluminescence (PL) spectra. Under optimized growth conditions, three high-quality (GaAsSb0.29/In0.4GaAs)/GaAs BQWs are successfully fabricated and a room temperature PL at 1314 nm is observed. The transition mechanism in the BQW is also discussed by photoluminescence and photoreflectance measurements. The results confirm experimentally a type-II band alignment of the interface between the GaAsSb and InGaAs layers.

Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy

Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecular beam epitaxy (MBE) were carried out. Temperature and excitation power dependent photoluminescence (PL) study indicated that the band alignment of the BQWs is type - II. The origin of the double-peak luminescence was discussed. Under optimized growth conditions, the PL emission wavelength from the BQWs has been extend up to 1.31 mu m with a single peak at room temperature.

Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells

Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photo luminescence (PL) that a strong blue shift of the PL peak energy of 47 meV with increasing PL excitation power from 0.63 to 20 mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 μ m) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 μ m range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 μ m wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. © 2005 Elsevier B.V. All rights reserved.

Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs

Periodical alignment of the InAs dots along the < 100 > and < 110 > directions was observed on an elastically relaxed InGaAs buffer layer grown at 500 and 450 degrees C, respectively, on the vicinal GaAs(001) substrate. Due to alignment along these directions, the InAs dots were arranged into a quasi-two-dimensional hexagonal lattice. Such a periodical arrangement of InAs dots may be explained in terms of modulation in strain as well as composition along [110] as observed by using cross-sectional transmission electron microscopy.

Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy

The deposition of InxGa1-xAs (0.2 less than or equal to x less than or equal to 0.5) on (311)B GaAs surfaces using solid source molecular beam epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed that homogeneous quantum dots could be formed on (311)B GaAs surface when indium composition was around 0.4. Indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. Compared with other surface orientation, (100) and (n11) A/B (n=1,2,3), photoluminescence measurement confirmed that (311)B surface is the most advantageous in fabricating uniform and dense quantum dots.

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy

In this paper, InGaAs quantum dots with an adjusting InGaAlAs layer underneath are grown on (n 1 1)A/B (n = 2-5) and the reference (1 0 0) substrates by molecular beam epitaxy. Small and dense InGaAs quantum dots are formed on (1 0 0) and (n 1 1)B substrates. A comparative study by atomic force microscopy shows that the alignment and uniformity for InGaAs quantum dots are greatly improved on(5 1 1)B but deteriorated on (3 1 1)B surface, demonstrating the great influence of the buried InGaAlAs layer. There is an increase in photoluminescence intensity and a decrease in the full-width at half-maximum when n varies from 2 to 5. Quantum dots formed on (3 1 1)A and (5 1 1)A surfaces are large and random in distribution, and no emission from these dots can be detected. (C) 1999 Elsevier Science B.V. All rights reserved.

Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE)

InAs and In0.9Al0.1As self-assembled quantum dots have been grown by Stranski-Krastanow growth mode on In0.52Al0.48As lattice-matched on (0 0 1)InP substrates by MBE. The ternary In0.9Al0.1As dots on InP was demonstrated for the first time. The structural and optical properties were characterized using TEM and PL, respectively. Experimental results show that, a larger critical thickness is required for In0.9Al0.1As dots formation than for InAs dots, the In0.9Al0.1As dots show larger sizes and less homogeneity; some ordering in alignment can be observed in both InAs and In0.9Al0.1As dots, and In0.9Al0.1As dots give narrower luminescence than InAs dots. (C) 1999 Elsevier Science B.V. All rights reserved.