Acceleration of ultra-thin electron layer.Analytical treatment compared with 1D-PIC simulation

In this paper, we apply an analytical model [V.V. Kulagin et al., Phys. Plasmas 14, 113101 (2007)] to describe the acceleration of an ultra-thin electron layer by a schematic single-cycle laser pulse and compare with one-dimensional particle-in-cell (1D-PIC) simulations. This is in the context of creating a relativistic mirror for coherent backscattering and supplements two related papers in this EPJD volume. The model is shown to reproduce the 1D-PIC results almost quantitatively for the short time of a few laser periods sufficient for the backscattering of ultra-short probe pulses.

Evolution and propagation of density waves on galactic disk .2. An approximation of the thin transition layer

In this part of the present work, a simplified model—the thin transition layer theory is proposed. The comparison of this model with the G-L sheet model is made.

Experimental Study on the Combined Evaporation Effect and Thermocapillary Convection in a Thin Liquid Layer

The coupling mechanisms and flow characteristics of thermocapillary convection in a thin liquid layer with evaporating interface were studied. The planar liquid layer, with the upper surface open to air, was imposed externally horizontal temperature differences. The measured average evaporating rates and interfacial temperature profiles indicated the relative importance of evaporation effect and thermocapillary convection under different temperature gradients. A temperature jump was found at the interface, which was thought to be related to the influence of evaporation effect. All above mentioned results were repeated in a rarely evaporating liquid to compare the influence of evaporation effect.

Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate

Various low-temperature (LT) ultra-thin buffer layers have been fabricated on the GaAs (001) substrate. The buffer layer is decoupled from the host substrate by introducing low-temperature defects. The 400 nm In0.25Ga0.75As films were grown on these substrates to test the 'compliant' effects of the buffer layers. Atomic force microscopy, photoluminescence, double crystal x-ray diffraction and transmission electron microscopy were used to estimate the quality of the ln(0.25)Ga(0.75)As layer. The measurements indicated that the misfit strains in the epilayer can be accommodated by the LT ultra-thin buffer layer. The strain accommodation effects of the LT defects have been discussed in detail.

Oscillatory Instability of Rayleigh-Marangoni-Benard Convection in Two-Layer System

The convective instabilities in two or more superposed layers heated from below were studied extensively by many scientists due to several interfacial phenomena in nature and crystal growth application. Most works of them were performed mainly on the instability behaviors induced only by buoyancy force, especially on the oscillatory behavior at onset of convection (see Gershuni et. Al.(1982), Renardy et. Al. (1985,2000), Rasenat et. Al. (1989), and Colinet et. Al.(1994)) . But the unstable situations of multi-layer liquid convection will become more complicated and interesting while considering at the same time the buoyancy effect combined with thermocapillary effect. This is the case in the gravity reduced field or thin liquid layer where the thermocapillary effect is as important as buoyancy effect. The objective of this study was to investigate theoretically the interaction between Rayleigh-Bénard instability and pure Marangoni instability in a two-layer system, and more attention focus on the oscillatory instability both at the onset of convection and with increasing supercriticality. Oscillatory behavious of Rayleigh-Marangoni-Bénard convective instability (R-M-B instability) and flow patterns are presented in the two-layer system of Silicon Oil (10cSt) over Fluorinert (FC70) for a larger various range of two-layer depth ratios (Hr=Hupper/Hdown) from 0.2 to 5.0. Both linear instability analysis and 2D numerical simulation (A=L/H=10) show that the instability of the system depends strongly on the depth ratio of two-layer liquids. The oscillatory instability regime at the onset of R-M-B convection are found theoretically in different regions of layer thickness ratio for different two-layer depth H=12,6,4,3mm. The neutral stability curve of the system displaces to right while we consider the Marangoni effect at the interface in comparison with the Rayleigh-Bénard instability of the system without the Marangoni effect (Ma=0). The numerical results show different regimes of the developing of convection in the two-layer system for different thickness ratios and some differences at the onset of pure Marangoni convection and the onset of Rayleigh-Bénard convections in two-layer liquids. Both traveling wave and standing wave were detected in the oscillatory instability regime due to the competition between Rayleigh-Bénard instability and Marangoni effect. The mechanism of the standing wave formation in the system is presented numerically in this paper. The oscillating standing wave results in the competition of the intermediate Marangoni cell and the Rayleigh convective rolls. In the two-layer system of 47v2 silicone oil over water, a transition form the steady instability to the oscillatory instability of the Rayleigh-Marangoni-Bénard Convection was found numerically above the onset of convection for ε=0.9 and Hr=0.5. We propose that this oscillatory mechanism is possible to explain the experimental observation of Degen et. Al.(1998). Experimental work in comparison with our theoretical findings on the two-layer Rayleigh-Marangoni-Bénard convection with thinner depth for H<6mm will be carried out in the near future, and more attention will be paid to new oscillatory instability regimes possible in the influence of thermocapillary effects on the competition of two-layer liquids

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer

We report the photoluminescence (PL) and structural properties of self-assembled InAs/GaAs quantum dots (QDs) covered by In0.2Al0.8As and In0.2Ga0.8As combination strain-reducing layer (SRL). By introducing a thin InAlAs layer, the ground state emission wavelength redshifts, and the energy splitting between the ground and first-excited states increases to 85 meV at 10 K. The energy splitting further increases to 92 meV and the temperature dependence of full width at half maximum (FWHM) changes for QDs with different SRL after the multi-stacking. These results are attributed to the fact that the combination layer has different effects on QDs compared to the InGaAs SRL.

In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate

High-quality In0.25Ga0.75As films were grown on low-temperature (LT) ultra-thin GaAs buffer layers formed on GaAs (0 0 1) substrate by molecular beam epitaxy. The epilayers were studied by atomic force microscopy (AFM), photo luminescence (PL) and double crystal X-ray diffraction (DCXRD), All the measurements indicated that LT thin buffer layer technique is a simple but powerful growth technique for heteroepitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.

Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

We have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semiconductor laser by introducing a combined InAlAs and InGaAs overgrowth layer on InAs/GaAs QDs. We found that QDs formed on GaAs (100) substrate by InAs deposition followed by the InAlAs and InGaAs combination layer demonstrate two effects: one is the photoluminescence peak redshift towards 1.35 mum at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 meV. These results are attributed to the fact that InAs/GaAs intermixing caused by In segregation at substrate temperature of 520 degreesC can be considerably suppressed by the thin InAlAs layer and the strain in the quantum dots can be reduced by the combined InAlAs and InGaAs layer. (C) 2002 American Institute of Physics.

Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition

A new alternative method to grow the relaxed Ge0.24Si0.76 layer with a reduced dislocation density by ultrahigh vacuum chemical vapor deposition is reported in this paper. A 1000-Angstrom Ge0.24Si0.76 layer was first grown on a Si(100) substrate. Then a 500-Angstrom Si layer and a subsequent 5000-Angstrom Ge0.24Si0.76 overlayer followed. All these three layers were grown at 600 degrees C. After being removed from the growth system to air, the sample was first annealed at 850 degrees C for 30 min, and then was investigated by cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy. It is shown that the 5000-Angstrom Ge0.24Si0.76 thick over layer is perfect, and most of the threading dislocations are located in the embedded thin Si layer and the lower 1000-Angstrom Ge0.24Si0.76 layer. The relaxation ratio of the over layer is deduced to be 0.8 from Raman spectroscopy.

Effect of diffusion on coating microstructure and oxidation resistance of aluminizing steel

The effect of diffuse treatment on coating microstructure and oxidation resistance at high-temperature of hot-dip aluminum were studied by means of TEM, SEM and XRD. The results show that, the diffusion temperature has significant effect on structure of coatings and its oxidation resistance. After diffusion at 750 degreesC, the coating consists of thick outer surface layer (Fe2Al5+ FeAl2), thin internal layer (FeAl + stripe FeAl2), and its oxidation resistance is poor. After diffusion at 950 degreesC, the outer surface layer is composed of single FeAl2 phase, the internal layer is composed of FeAl phase, and its oxidation resistance declines due to the occurrence of early stage internal oxidation cracks in the coating. After diffusion at 850 degreesC, the outer surface layer becomes thinner and consists of FeAl2 Fe2Al5(small amount), the internal layer becomes thicker and consists of FeAl+spherical FeAl2, and the spheroidized FeAl2 phase in the internal layer and its existing in FeAl phase steadily improve the oxidation resistance of the coating.

Mechanical modeling of grain boundary sliding of polycrystals

Using a variational method, a general three-dimensional solution to the problem of a sliding spherical inclusion embedded in an infinite anisotropic medium is presented in this paper. The inclusion itself is also a general anisotropic elastic medium. The interface is treated as a thin interface layer with interphase anisotropic properties. The displacements in the matrix and the inclusion are expressed as polynomial series of the cartesian coordinate components. Using the virtual work principle, a set of linear algebraic equations about unknown coefficients are obtained. Then the general sliding spherical inclusion problem is accurately solved. Based on this solution, a self-consistent method for sliding polycrystals is proposed. Combining this with a two-dimensional model of an aggregate polycrystal, a systematic analysis of the mechanical behaviour of sliding polycrystals is given in detail. Numerical results are given to show the significant effect of grain boundary sliding on the overall mechanical properties of aggregate polycrystals.

Evolution and propagation of density waves on galactic disk .1. General evolution equation of wavelet and discussion of its solution

This paper presents a general self-consistent theory of evolution and propagation of wavelets on the galactic disk. A simplified model for this theory, i. e. the thin transition-layer approximation is proposed.There are three types of solutions to the basic equation governing the evolution of wavelets on the disk: (ⅰ) normal propagating type; (ⅱ) swing type; (ⅲ) general evolving type. The results show that the first two types are applicable to a certain domain on the galactic disk and a certain region of the wave number of wavelets. The third is needed to join the other two types and to yield a coherent total picture of the wave motion. From the present theory, it can be seen that the well-known "swing theory" of the G-L sheet model holds only for a certain class of basic states of galaxies.

多热源分布时薄层液体中热毛细对流的分叉特征

研究一个液体薄层在热源作用下的流动特征.Pimputakar和Ostrach给出了单热源作用下薄层液体的高度和流场方程.在此基础上具体分析比较了多个热源分布作用下的流动图像随各参数尤其是随热源间距离不同的变化情况,着重讨论产生的分叉现象.