Direct numerical test of the B-G-K model equation by the DSMC method

In the present paper the rarefied gas how caused by the sudden change of the wall temperature and the Rayleigh problem are simulated by the DSMC method which has been validated by experiments both in global flour field and velocity distribution function level. The comparison of the simulated results with the accurate numerical solutions of the B-G-K model equation shows that near equilibrium the BG-K equation with corrected collision frequency can give accurate result but as farther away from equilibrium the B-G-K equation is not accurate. This is for the first time that the error caused by the B-G-K model equation has been revealed.

Spatio-Temporal Scanning and Statistical Test of the Accelerating Moment Release (AMR) Model Using Australian Earthquake Data

The Accelerating Moment Release (AMR) preceding earthquakes with magnitude above 5 in Australia that occurred during the last 20 years was analyzed to test the Critical Point Hypothesis. Twelve earthquakes in the catalog were chosen based on a criterion for the number of nearby events. Results show that seven sequences with numerous events recorded leading up to the main earthquake exhibited accelerating moment release. Two occurred near in time and space to other earthquakes preceded by AM R. The remaining three sequences had very few events in the catalog so the lack of AMR detected in the analysis may be related to catalog incompleteness. Spatio-temporal scanning of AMR parameters shows that 80% of the areas in which AMR occurred experienced large events. In areas of similar background seismicity with no large events, 10 out of 12 cases exhibit no AMR, and two others are false alarms where AMR was observed but no large event followed. The relationship between AMR and Load-Unload Response Ratio (LURR) was studied. Both methods predict similar critical region sizes, however, the critical point time using AMR is slightly earlier than the time of the critical point LURR anomaly.

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes

The mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. Plane-strain modulus E-ps, prestress so, and fracture strength s(max) for 3C-SiC thin films with thickness of 0.40 mu m and 1.42 mu m were extracted. The E, values of SiC are strongly dependent on grain orientation. The thicker SIC film presents lower so than the thinner film due to stress relaxation. The s(max) values decrease with increasing film thickness. The statistical analysis of the fracture strength data were achieved by Weibull distribution function and the fracture origins were predicted.

Small-signal and large-signal performance test of high-speed optoelectronics devices

This paper presents measurement methods for determining the reflection coefficients and frequency responses of semiconductor laser diodes, photodiodes, and EA modulator chips. A novel method for determining the intrinsic frequency responses of laser diodes is also proposed, and applications of the developed measurement methods are discussed. We demonstrate the compensation of bonding wire on the capacitances of both the submount and the laser diode, and present a method for estimating the potential modulation bandwidth of TO packaging technique. Initial study on removing the effects of test fixture on large-signal performances of optoelectronic devices at high data rate is also given.

Commissioning test of LAPECR2 source on the 320kV HV platform

The high charge state all permanent Electron Cyclotron Resonance Ion Source (ECRIS) LAPECR2 (Lanzhou All Permanent magnet ECR ion source No.2) has been successfully put on the 320kV HV platform at IMP and also has been connected with the successive LEBT system. This source is the largest and heaviest all permanent magnet ECRIS in the world. The maximum mirror field is 1.28T (without iron plug) and the effective plasma chamber volume is as large as circle divide 67mm x 255mm. It was designed to be operated at 14.5GHz and aimed to produce medium charge state and high charge state gaseous and also metallic ion beams. The source has already successfully delivered some intense gaseous ion beams to successive experimental terminals. This paper will give a brief overview of the basic features of this permanent magnet ECRIS. Then commissioning results of this source on the platform, the design of the extraction system together with the successive LEBT system will be presented.

Construction and test of Wien-filter combined with RIBLL

A recoil separator Wien-filter which was developed for the Radioactive Ion Beam Line in Lanzhou (RIBLL) as an extension is described. It consists of 2 quadruple triplets and a standard Wien-filter. It was designed for study of the fusion-evaporation reactions. The overall design, background suppression, the transmission efficiency, the angular acceptance and the momentum acceptance have been described. All the performances fulfil the designed requirements. Based on the test results, with some modifications the investigations of the nuclei with Z <= 110 and the drip-line nuclei in the medium-heavy mass region can be carried out with this facility.

CSR外靶实验终端中CsI(Tl)晶体的测试；Test of CsI(Tl) Crystal at External Target Experimental Terminal of Cooling Storage Ring

为测量重离子加速器冷却储存环(HIRFL-CSR)的外靶实验终端上不同能量的γ射线,一种用于探测γ射线的高能量分辨的探测装置正在中国科学院近代物理研究所建设,该探测器由中国科学院近代物理研究所自行生长的铊激活的碘化铯CsI(Tl)晶体组成。与日本Hamamatsu公司生产的S8664-1010型雪崩光二极管(APD)耦合,测试其光输出的非均匀性和能量分辨,从测试结果给出了所需CsI(Tl)晶体合格的标准。目前已完成该γ探测球计划的六分之一,所提供的晶体合格率达94%以上。