带电胶体粒子结晶过程的实验研究

利用带电单分散聚苯乙烯胶体粒子,通过自组装机理,制备了体积百分比为4·8%的具有多晶结构的胶体晶体,并用Kossel衍射技术和紫外可见分光光度计分别对晶体的生长过程进行了监测.通过对Kossel的图像分析检测不同阶段相应的晶格结构,发现胶体结晶过程晶体结构演变顺序为由液态—随机层结构—堆无序结构—面心立方孪晶结构到面心立方结构.定量地确定了结晶过程中晶体不同晶面的晶面间距和晶体的晶格常数,通过紫外可见分光光度计测量的晶体透射谱图,计算得到111晶面的晶面间距和晶体的晶格常数,与用Kossel衍射技术得到的结果相一致,还发现随样品放置时间的延长,衰减峰变窄和加深,并向短波方向移动,对应着晶体的晶格常数减小的现象.

Cone Effect in Astronomical Adaptive Optics System Investigated by a Pure Numerical Simulation

It is well-known that cone effect or focus anisoplanatism is produced by the limited distance of a laser guide star (LGS) which is created within the Earth atmosphere and consequently located at a finite distance from the observer. In this paper, the cone effect of the LGS for different vertical profiles of the refractive index structure constant Cn2 is numerically investigated by using a revised computer program of atmospheric propagation of optical wave and an adaptive optics (AO) system including dynamic control process. According to the practice, the overall tilt for the tilt-correction mirror is obtained from a natural star and the aberrated wavefront for phase correction of the deformable mirror is obtained from a LGS in our numerical simulation. It is surprisingly found that the effect of altitude of the LGS on the AO phase compensation effectiveness by using the commonly-available vertical profiles of Cn2 and the lateral wind speed in the atmosphere is relatively weak, and the cone effect for some Cn2 profiles is even negligible. It is found that the cone effect does not have obvious relationship with the turbulence strength, however, it depends on the vertical distribution profile of Cn 2 apparently. On the other hand, the cone effect depends on the vertical distribution of the lateral wind speed as well. In comparison to a longer wavelength, the cone effect becomes more obvious in the case of a shorter wavelength. In all cases concerned in this paper, an AO system by using a sodium guide star has almost same phase compensation effectiveness as that by using the astronomical target itself as a beacon. Effect of dynamic control process in an AO system on the cone effect is studied in this paper for the first time within our knowledge.

Optimization of multi-cycle two-color laser fields for the generation of an isolated attosecond pulse

The effect of the mixing of pulsed two color fields on the generation of an isolated attosecond pulse has been systematically investigated. One main color is 800 nm and the other color (or secondary color) is varied from 1.2 to 2.4 mu m. This work shows that the continuum length behaves in a similar way to the behavior of the difference in the square of the amplitude of the strongest and next strongest cycle. As the mixing ratio is increased, the optimal wavelength for the extended continuum shifts toward shorter wavelength side. There is a certain mixing ratio of intensities at which the continuum length bifurcates, i.e., the existence of two optimal wavelengths. As the mixing ratio is further increased, each branch bifurcates again into two sub-branches. This 2D map analysis of the mixing ratio and the wavelength of the secondary field easily allows one to select a proper wavelength and the mixing ratio for a given pulse duration of the primary field. The study shows that an isolated sub-100 attosecond pulse can be generated mixing an 11 fs full-width-half-maximum (FWHM), 800 laser pulse with an 1840 nm FWHM pulse. Furthermore the result reveals that a 33 fs FWHM, 800 nm pulse can produce an isolated pulse below 200 as, when properly mixed. (c) 2008 Optical Society of America.

高阶群速度色散引起的高斯超短脉冲宽度的展宽和形变

基于动量守恒和光参变过程中的三波耦合波方程, 和负单轴非线性光学晶体CsLiB6O10的色散方程, 研究了在光参变效应中超短激光脉冲由于群速度色散引起的展宽和形变。数值模拟显示, 在超短脉冲波形为双曲正割形和无啁啾调制时, 高阶群速度色散引起的超短脉冲为50 fs时, 晶体长度为10 mm, 紫外光213 nm作为基波入射时的脉冲展宽是波长为532 nm绿光在同等条件下的1.6倍。脉冲展宽程度与入射波长和晶体长度有关, 波长越短和晶体长度越长则脉冲展宽和波形变化越严重,高阶色散引起的超短高斯脉冲展宽, 将

LiNbO3∶Fe∶Rh晶体近红外非挥发全息记录

采用双中心记录方案在双掺杂LiNbO3∶Fe∶Rh晶体中实现了近红外非挥发全息记录,研究了LiNbO3∶Fe∶Rh晶体在633 nm,752 nm,799 nm波长下的全息记录性能。结果表明,在使用近红外记录光时,其记录灵敏度随敏化光强的变化趋势与双中心短波长记录时的不同。通过和LiNbO3∶Fe∶Mn等传统双掺杂铌酸锂晶体的近红外波段记录效果对比,发现同时掺杂Fe和Rh可增强晶体对近红外光的吸收,获得更高的浅中心Fe光生伏特系数,从而能够在LiNbO3∶Fe∶Rh晶体中实现近红外波段的光折变全息记录。

Absorption characteristic and nonvolatile holographic recording in LiNbO3 : Cr : Cu crystals

The absorption characteristic of lithium niobate crystals doped with chromium and copper (Cr and Cu) is investigated. We find that there are two apparent absorption bands for LiNbO3:Cr:Cu crystal doped with 0.14 wt.% Cr2O3 and 0.011 wt.% CuO; one is around 480 nm, and the other is around 660 nm. With a decrease in the doping composition of Cr and an increase in the doping composition of Cu, no apparent absorption band in the shorter wavelength range exists. The higher the doping level of Cr, the larger the absorbance around 660 nm. Although a 633 nm red light is located in the absorption band around 660 nm, the absorption at 633 nm does not help the photorefractive process; i.e., unlike other doubly doped crystals, for example, LiNbO3:Fe:Mn crystal, a nonvolatile holographic recording can be realized by a 633 nm red light as the recording light and a 390 nm UV light as the sensitizing light. For LiNbO3:Cr:Cu crystals, by changing the recording light from a 633 nm red light to a 514 nm green light, sensitizing with a 390 nm UV light and a 488 nm blue light, respectively, a nonvolatile holographic recording can be realized. Doping the appropriate Cr (for example, N-Cr = 2.795 X 10(25)m(-3) and N-Cr/N-Cu = 1) benefits the improvement of holographic recording properties. (c) 2005 Optical Society of America.

Study of near-infrared nonvolatile two-center holographic recording in LiNbO3:Fe:Rh crystal

The near-infrared nonvolatile holographic recording has been realized in a doubly doped LiNbO3:Fe:Rh crystal by the traditional two-center holographic recording scheme, for the first time. The recording performance of this crystal has been investigated by recording with 633 nm red light, 752 nm red light and 799 nm near-infrared light and sensitizing with 405 nm purple light. The experimental results show that, co-doped with Fe and Rh, the near-infrared absorption and the photovoltaic coefficient of shallow trap Fe are enhanced in this LiNbO3:Fe:Rh crystal, compared with other doubly doped LiNbO3 crystals Such as LiNbO3:Fe:Mn. It is also found that the sensitizing light intensity affects the near-infrared recording sensitivity in a different way than two-center holographic recording with shorter wavelength, and the origin of experimental results is analyzed. (C) 2007 Elsevier GrnbH. All rights reserved.

Photoinduced effects in amorphous Ge-Se films

With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphous GeSe2 films; were investigated with the X-ray diffraction (XRD), infrared absorption (IR), scanning electron microscope (SEM), transmitting electron microscope (TEM) and transmittance spectra analysis. It was observed that the optical transmittance edges of films shifted to shorter wavelength according to annealing and light illumination and the shift in well-annealed films could be recovered by annealing at 200 degrees C for 1 h in Ar air. The magnitude of shift increased with the increase of the intensity of illumination light and the illumination time. By sides, photoinduced crystallization was also observed in the exposed regions of GeSe2 films and more of it was observed with stronger intensity of illumination light.

BaF2替代BaO对钡镓锗酸盐玻璃光学性质的影响

在摩尔分数组成x(BaO),r(Ga2O),r(GeO2)为0．20，0．15,0．65的玻璃中，分别以摩尔分数0．05，0．10．0．15和0．20的BaF2替代BaO,研究了氟化物对玻璃折射率和光吸收性质的影响。结果表明，在玻璃中加入氟化物．玻璃折射率和色散降低，玻璃的紫外吸收边向短波侧迁移，而红外吸收边无明显变化。不含氟化物的氧化物玻璃中含有大量的OH基．这些OH基在2．24μm、2．97μm和4．23μm附近引起光吸收．在含氟化物的玻璃中，2．24μm的吸收峰消失，而2．97μm和4．23μm附近

Growth and characterization of new transparent conductive oxides single crystals beta-Ga2O(3): Sn

Tin oxide doped beta-Ga2O3 single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. beta-Ga2O3 single crystals doped with different Sn4+ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn4+ concentrations and annealing. (c) 2006 Elsevier Ltd. All rights reserved.

Band structure of photonic crystal fibers with silica rings in triangular lattice

The characteristics of the cladding band structure of air-core photonic crystal fibers with silica rings in triangular lattice are investigated by using a standard plane wave method. The numerical results show that light can be localized in the air core by the photonic band gaps of the fiber. By increasing the air-filling fraction, the band gap edges of the low frequency photonic band gaps shift to shorter wavelength.. whereas the band gap width decreases linearly. In order to make a specified light fall in the low frequency band gaps of the fiber, the interplay of the silica ring spacing and the air-filling fraction is also analyzed. It shows that the silica ring spacing increases monotonously when the air-filling fraction is increased, and the spacing range increases exponentially. This type fiber might have potential in infrared light transmission. (c) 2006 Elsevier B.V. All rights reserved.

退火对电子束热蒸发193nm Al2O3/MgF2反射膜性能的影响

设计并镀制了193nm Al2O3/MgF2反射膜,对它们在空气中分别进行了250-400℃的高温退火,测量了样品的透射率光谱曲线和绝对反射率光谱曲线.发现样品在高反射区的总的光学损耗随退火温度的升高而下降,而后趋于饱和.采用总积分散射的方法对样品在不同退火温度下的散射损耗进行了分析,发现随着退火温度的升高散射损耗有所增加.因此,总的光学损耗的下降是由于吸收损耗而不是散射损耗起主导作用.对Al2O3材料的单层膜进行了同等条件的退火处理,由它们光学性能的变化推导出它们的折射率和消光系数的变化,从而解释了相应

Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films

The effects of oxygen partial pressure on the structure and photoluminescence (PL) of ZnO films were studied. The films were prepared by direct current (DC) reactive magnetron sputtering with various oxygen concentrations at room temperature. With increasing oxygen ratio, the structure of films changes from zinc and zinc oxide phases, single-phase ZnO, to the (002) orientation, and the mechanical stresses exhibit from tensile stress to compressive stress. Films deposited at higher oxygen pressure show weaker emission intensities, which may result from the decrease of the oxygen vacancies and zinc interstitials in the film. This indicates that the emission in ZnO film originates from the oxygen vacancy and zinc interstitial-related defects. From optical transmittance spectra of ZnO films, the plasma edge shifts towards the shorter wavelength with the improvement of film stoichiometry. (C) 2004 Elsevier B.V. All rights reserved.

The effects of oxygen partial pressure on the optical absorption edge and the UV emission energy of ZnO films

The optical absorption edge and ultraviolet (UV) emission energy of ZnO films deposited by direct current (DC) reactive magnetron sputtering at room temperature have been investigated. With the oxygen ratio increasing, the structure of films changes from zinc and zinc oxide coexisting phase to single-phase ZnO and finally to the highly (002) orientation. Both the grain size and the stress of ZnO film vary with the oxygen partial pressure. Upon increasing the oxygen partial pressure in the growing ambient, the visible emission in the room-temperature photoluminescence spectra was suppressed without sacrificing the band-edge emission intensity in the ultraviolet region. The peaks of photoluminescence spectra were located at 3.06---3.15 eV. From optical transmittance spectra of ZnO films, the optical band gap edge was observed to shift towards shorter wavelength with the increase of oxygen partial pressure.

Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

Al2O3/SiO2 films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and Xray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al2O3/SiO2 films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al2O3/SiO2 films annealed at reasonable temperatures and prepared as fine anti-reflection coatings on 4H-SiC-based UV optoelectronic devices. (c) 2008 Elsevier B.V. All rights reserved.