Electrochemical, spectroscopic and SPM evidence for the controlled formation of self-assembled monolayers and organised multilayers of ferrocenyl alkyl thiols on Au(111)

Organised multilayers were formed from the controlled self-assembly of ferrocene alkyl thiols on Au(111) surfaces. The control was accomplished by increasing the concentration of the thiol solutions used for the assembly. Cyclic voltammetry, ellipsometry, scanning probe microscopy (STM and AFM) and in situ FTIR spectroscopy were used to probe the differences between mono- and multilayers of the same compounds. Electrochemical desorption studies confirmed that the multilayer structure is attached to the surface via one monolayer. The electrochemical behaviour of the multilayers indicated the presence of more than one controlling factor during the oxidation step, whereas the reduction was kinetically controlled which contrasts with the behaviour of monolayers, which exhibit kinetic control for the oxidation and reduction steps. Conventional and imaging ellipsometry confirmed that multilayers with well-defined increments in thickness could be produced. However, STM indicated that at the monolayer stage, the thiols used promote the mobility of Au atoms on the surface. It is very likely that the multilayer structure is held together through hydrogen bonding. To the best of out knowledge, this is the first example of a controlled one-step growth of multilayers of ferrocenyl alkyl thiols using self-assembly techniques.

High-density gold nanoparticles supported on a [Ru(bpy)(3)](2+)-doped silica/Fe3O4 nanocomposite: Facile preparation, magnetically induced immobilization, and applications in ECL detection

A large-scale process combined sonication with self-assembly techniques for the preparation of high-density gold nanoparticles supported on a [Ru(bpy)(3)](2+)-doped silica/Fe3O4 nanocomposite (GNRSF) is provided. The obtained hybrid nanomaterials containing Fe3O4 spheres have high saturation magnetization, which leads to their effective immobilization on the surface of an ITO electrode through simple manipulation by an external magnetic field (without the need of a special immobilization apparatus). Furthermore, this hybrid nanomaterial film exhibits a good and very stable electrochemiluminescence (ECL) behavior, which gives a linear response for tripropylamine (TPA) concentrations between 5 mu m and 0.21 mM, with a detection limit in the micromolar range. The sensitivity of this ECL sensor can be easily controlled by the amount of [Ru(bpy)(3)](2+) immobilized on the hybrid nanomaterials (that is, varying the amount of [Ru(bpy)(3)](2+) during GNRSF synthesis).

Colloid chemical approach to nanoelectrode ensembles with highly controllable active area fraction

A novel "bottom-up" approach to highly controllable nanoelectrode ensembles (NEEs) has been developed using colloidal nanoparticle self-assembly techniques. Ibis solution-based strategy allows flexible control over nanoelectrode size, shape, and interspacing of the as-prepared NEEs. Atomic force microscopy (AFM) was proved to be a powerful tool to monitor the NEE topography, which yields parameters that can be used to calculate the fractional nanoelectrode area of the NEEs. AFM, ac impedance, and cyclic voltammetry studies demonstrate that most of nanoelectrodes on the NEEs (at least by 9-min self-assembly) are not diffusionally isolated under conventional ac frequency range and scan rates. As a result, the NEEs behave as "nanoelectrode-patch" assemblies. Besides, the as-prepared NEEs by different self-assembling times show an adjustable sensitivity to heterogeneous electron-transfer kinetics, which may be helpful to sensor applications. Like these NEEs constructed by other techniques, the present NEEs prepared by chemical self-assembly also exhibit the enhancement of electroanalytical detection limit consistent with NEE theory prediction.

胜利勘探数据中心及勘探辅助决策系统研究

In the paper through extensive study and design, the technical plan for establishing the exploration database center is made to combine imported and self developed techniques. By research and repeated experiment a modern database center has been set up with its hardware and network having advanced performance, its system well configured, its data store and management complete, and its data support being fast and direct. Through study on the theory, method and model of decision an exploration decision assistant schema is designed with one decision plan of well location decision support system being evaluated and put into action. 1. Study on the establishment of Shengli exploration database center Research is made on the hardware configuration of the database center including its workstations and all connected hardware and system. The hardware of the database center is formed by connecting workstations, microcomputer workstations, disk arrays, and those equipments used for seismic processing and interpretation. Research on the data store and management includes the analysis of the contents to be managed, data flow, data standard, data QC, data backup and restore policy, optimization of database system. A reasonable data management regulation and workflow is made and the scientific exploration data management system is created. Data load is done by working out a schedule firstly and at last 200 more projects of seismic surveys has been loaded amount to 25TB. 2. Exploration work support system and its application Seismic data processing system support has the following features, automatic extraction of seismic attributes, GIS navigation, data order, extraction of any sized data cube, pseudo huge capacity disk array, standard output exchange format etc. The prestack data can be accessed by the processing system or data can be transferred to other processing system through standard exchange format. For supporting seismic interpretation system the following features exist such as auto scan and store of interpretation result, internal data quality control etc. the interpretation system is connected directly with database center to get real time support of seismic data, formation data and well data. Comprehensive geological study support is done through intranet with the ability to query or display data graphically on the navigation system under some geological constraints. Production management support system is mainly used to collect, analyze and display production data with its core technology on the controlled data collection and creation of multiple standard forms. 3. exploration decision support system design By classification of workflow and data flow of all the exploration stages and study on decision theory and method, target of each decision step, decision model and requirement, three concept models has been formed for the Shengli exploration decision support system including the exploration distribution support system, the well location support system and production management support system. the well location decision support system has passed evaluation and been put into action. 4. Technical advance Hardware and software match with high performance for the database center. By combining parallel computer system, database server, huge capacity ATL, disk array, network and firewall together to create the first exploration database center in China with reasonable configuration, high performance and able to manage the whole data sets of exploration. Huge exploration data management technology is formed where exploration data standards and management regulations are made to guarantee data quality, safety and security. Multifunction query and support system for comprehensive exploration information support. It includes support system for geological study, seismic processing and interpretation and production management. In the system a lot of new database and computer technology have been used to provide real time information support for exploration work. Finally is the design of Shengli exploration decision support system. 5. Application and benefit Data storage has reached the amount of 25TB with thousand of users in Shengli oil field to access data to improve work efficiency multiple times. The technology has also been applied by many other units of SINOPEC. Its application of providing data to a project named Exploration achievements and Evaluation of Favorable Targets in Hekou Area shortened the data preparation period from 30 days to 2 days, enriching data abundance 15 percent and getting information support from the database center perfectly. Its application to provide former processed result for a project named Pre-stack depth migration in Guxi fracture zone reduced the amount of repeated process and shortened work period of one month and improved processing precision and quality, saving capital investment of data processing of 30 million yuan. It application by providing project database automatically in project named Geological and seismic study of southern slope zone of Dongying Sag shortened data preparation time so that researchers have more time to do research, thus to improve interpretation precision and quality.

Spatiotemporal evolution and multiple self-focusing of ultrashort pulses in a resonant two-level medium

The spatiotemporal evolutions of ultrashort pulses in two dimensions are investigated numerically by solving the coupled Maxwell-Bloch equations without invoking the slowly varying envelope approximation and rotating-wave approximation. For an on-axis 2n pi sech pulse, local delay makes the temporal split 2 pi sech pulses crescent-shaped in the transverse distribution. Due to the transverse effect, the temporal split 2 pi sech pulses become unstable and experience reshaping during the propagation process. Then, interference occurs between the successive crescent-shaped pulses and multiple self-focusing can form.

Analysis of the additional modulation of semiconductor lasers using optical heterodyne techniques

In this letter, the power spectrum of a cooled distributed feedback laser module is measured using the self-heterodyne technique. Periodical oscillation peaks have been observed in the measurement. Further investigation shows that the additional modulation signal is coupled from the thermal electric cooler (TEC) controller to the laser driver, and then applied to the laser diode. The additional modulation can be eliminated by properly isolating the laser driving source from the TEC controller.

Electronic structure of self-assembled InAs quantum disks in an axial magnetic field and two-electron quantum-disk qubit

We have studied the single-electron and two-electron vertically assembled quantum disks in an axial magnetic field using the effective mass approximation. The electron interaction is treated accurately by the direct diagonalization of the Hamiltonian matrix. We calculate the six energy levels of the single-electron quantum disks and the two lowest energy levels of the two-electron quantum disks in an axial magnetic field. The change of the magnetic field strongly modifies the electronic structures as an effective potential, leading to the splitting of the levels and the crossings between the levels. The effect of the vertical alignment on the electronic structures is discussed. It is demonstrated that the switching of the ground-state spin exists between S=0 and S=1. The energy difference DeltaE between the lowest S=0 and S=1 states is shown as a function of the axial magnetic field. It is also found that the variation of the energy difference between the lowest S=0 and S=1 states in the strong-B S=0 state is fairly linear. Our results provide a possible realization for a qubit to be fabricated by current growth techniques. (C) 2004 American Institute of Physics.

Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures

The interband and intraband photocurrent properties of InAs/InAlAs/InP nanostructures have been studied. The doping effect on the photoluminescence properties of the quantum dots and the anisotropy of the quantum wire interband photocurrent properties are presented and discussed. With the help of interband excitation, an intraband photocurrent signal of the InAs nanostructures is observed. With the increase of the interband excitation power, the intraband photocurrent signal first increases and then decreases, which can be explained by the variance of the ground state occupation of the InAs nanostructures and the change of the mobility and lifetime of the electrons. The temperature dependence of the intraband photocurrent signal of the InAs nanostructures is also investigated.

Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS

Optical and electrical characterization of the ZnS self-organized quantum dots (QDs) embedded in ZnS by molecular beam epitaxy have been investigated using photoluminescence (PL), capacitance-voltage (C-V), and deep level transient Fourier spectroscopy (DLTFS) techniques. The temperature dependence of the free exciton emission was employed to clarify the mechanism of the PL thermal quenching processes in the ZnSe QDs. The PL experimental data are well explained by a two-step quenching process. The C-V and DLTFS techniques were used to obtain the quantitative information on the electron thermal emission from the ZnSe QDs. The correlation between the measured electron emission from the ZnSe QDs in the DLTFS and the observed electron accumulation in the C-V measurements was clearly demonstrated. The emission energy for the ground state of the ZnSe QDs was determined to be at about 120 meV below the conduction band edge of the ZnS barrier, which is in good agreement with the thermal activation energy, 130 meV, obtained by fitting the thermal quenching process of the free exciton PL peak. (C) 2003 American Institute of Physics.

Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.

Optical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy

Optical and electrical properties of ZnSe self-organized quantum dots were investigated using photoluminescence, capacitance-voltage, and deep level transient Fourier spectroscopy techniques. The temperature dependence of photoluminescence was employed to clarify the mechanism of photoluminescence thermal quenching processes in ZnSe quantum dots. A theoretic fit on considering a two-step quenching processes well explained the experimental data. The apparent carrier concentration profile obtained from capacitance-voltage measurements exhibits an accumulation peak at the depth of about 100nm below the sample surface, which is in good agreement with the location of the quantum dot layer. The electronic ground state of ZnSe quantum dots is determined to be about 0.11 eV below the conduction band of ZnS, which is similar to that obtained by simulating the thermal quenching of ZnSe photoluminescence.

X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. (C) 2000 American Institute of Physics. [S0003-6951(00)02440-2].

Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures

We present lateral intersubband photocurrent (PC) study on self-assembled InAs/InAIAs/InP(001) nanostructures in normal incidence. With the help of interband excitation, a broad PC signal has been observed in the photon energy range of 150-630 meV arising from the bound-to-continuum intersubband absorption in the InAs nanostructures. The large linewidth of the intersubband PC signal is due to the size inhomogeneity of the nanostructures. With the increase of the interband excitation the intersubband PC signal firstly increases with a redshift of PC peak and reaches its maximum, then decreases with no peak shift. The increase and redshift of the PC signal at low excitation level can be explained by the state filling effect. However, the decrease of PC signal at high excitation level may be due to the change of the mobility and lifetime of the electrons. The intersubband PC signal decreases when the temperature is increased, which can be explained by the decrease of the mobility and lifetime of the electrons and the thermal escape of electrons.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.