Fuzzy inferring mathematical morphology and optical implementation

Fuzzification is introduced into gray-scale mathematical morphology by using two-input one-output fuzzy rule-based inference systems. The fuzzy inferring dilation or erosion is defined from the approximate reasoning of the two consequences of a dilation or an erosion and an extended rank-order operation. The fuzzy inference systems with numbers of rules and fuzzy membership functions are further reduced to a simple fuzzy system formulated by only an exponential two-input one-output function. Such a one-function fuzzy inference system is able to approach complex fuzzy inference systems by using two specified parameters within it-a proportion to characterize the fuzzy degree and an exponent to depict the nonlinearity in the inferring. The proposed fuzzy inferring morphological operators tend to keep the object details comparable to the structuring element and to smooth the conventional morphological operations. Based on digital area coding of a gray-scale image, incoherently optical correlation for neighboring connection, and optical thresholding for rank-order operations, a fuzzy inference system can be realized optically in parallel. (C) 1996 Society of Photo-Optical Instrumentation Engineers.

Classified one-step modified signed-digit arithmetic and its optical implementation

Based on the two-step modified signed-digit (MSD) algorithm, we present a one-step algorithm for the parallel addition and subtraction of two MSD numbers. This algorithm is reached by classifying the three neighboring digit pairs into 10 groups and then making a decision on the groups. It has only a look-up truth table, and can be further formulated by eight computation rules. A joint spatial encoding technique is developed to represent both the input data and the computation rules. Furthermore, an optical correlation architecture is suggested to implement the MSD adder in parallel. An experimental demonstration is also given. (C) 1996 Society of Photo-Optical instrumentation Engineers.

Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD

For both, (Al,Ga)N with low Al content grown on a GaN nucleation layer and (AI,Ga)N with high Al content gown on an AlN nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. In the former system, defect regions exhibit a much lower Al content than the nominal one leading to a splitting of the respective luminescence spectra. In the latter system, a domain-like growth is observed with a pyramidal surface morphology and non-radiative recombination within the domain boundaries. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

4.2 K photoluminescence (PL) and 77 K standard Hall-effect measurements were performed for In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor (HEMT) structures grown on GaAs substrates with different indium contents in the InxGa1-xAs well or different Si delta-doping concentrations. It was found that electron concentrations increased with increasing PL intensity ratio of the "forbidden" transition (the second electron subband to the first heavy-hole subband) to the sum of the "allowed" transition (the first electron subband to the first heavy-hole subband) and the forbidden transition. And electron mobilities decreased with increasing product of the average full width at half maximum of allowed and forbidden transitions and the electron effective mass in the InxGa1-xAs quantum well. These results show that PL measurements are a good supplemental tool to Hall-effect measurements in optimization of the HEMT layer structure. (c) 2006 American Institute of Physics.

Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser

Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown on InP substrate by molecule beam epitaxy, by means of which, excellent lattice matching, the interface smoothness, the uniformity of the thickness and the composition of the epilayer are disclosed. What is more, these results are in good agreement with designed value. The largest lattice mismatch is within 0.18% and the intersubband absorption wavelength between two quantized energy levels is achieved at about lambda = 5.1 mum at room temperature. At 77 K, the threshold density of the QC laser is less than 2.6 kA/cm(2) when the repetition rate is 5 kHz and the duty cycle is 1%. (C) 2003 Elsevier Science B.V. All rights reserved.

Correlation of electrical and optical properties in dually Cd+ and N+ ion-implanted GaAs

Cd in GaAs is an acceptor atom and has the largest atomic diameter among the four commonly-used group-II shallow acceptor impurities (Be, Mg, Zn and Cd). The activation energy of Cd (34.7 meV) is also the largest one in the above four impurities, When Cd is doped by ion implantation, the effects of lattice distortion are expected to be apparently different from those samples ion-implanted by acceptor impurities with smaller atomic diameter. In order to compensate the lattice expansion and simultaneously to adjust the crystal stoichiometry, dual incorporation of Cd and nitrogen (N) was carried out into GaAs, Ion implantation of Cd was made at room temperature, using three energies (400 keV, 210 keV, 110 keV) to establish a flat distribution, The spatial profile of N atoms was adjusted so as to match that of Cd ones, The concentration of Cd and N atoms, [Cd] and [N] varied between 1 x 10(16) cm(-3) and 1 x 10(20) cm(-3). Two type of samples, i.e., solely Cd+ ion-implanted and dually (Cd+ + N+) ion-implanted with [Cd] = [N] were prepared, For characterization, Hall effects and photoluminescence (PL) measurements were performed at room temperature and 2 K, respectively. Hall effects measurements revealed that for dually ion-implanted samples, the highest activation efficiency was similar to 40% for [Cd] (= [N])= 1 x 10(18) cm(-3). PL measurements indicated that [g-g] and [g-g](i) (i = 2, 3, alpha, beta,...), the emissions due to the multiple energy levels of acceptor-acceptor pairs are significantly suppressed by the incorporation of N atoms, For [Cd] = [N] greater than or equal to 1 x 10(19) cm(-3), a moderately deep emission denoted by (Cd, N) is formed at around 1.45-1.41 eV. PL measurements using a Ge detector indicated that (Cd, N) is increasingly red-shifted in energy and its intensity is enhanced with increasing [Cd] = [N], (Cd, N) becomes a dominant emission for [Cd] = [N] = 1 x 10(20) cm(-3). The steep reduction of net hole carrier concentration observed for [Cd]/[N] less than or equal to 1 was ascribed to the formation of (Cd, N) which is presumed to be a novel radiative complex center between acceptor and isoelectronic atoms in GaAs.

Chemical bond analysis of the correlation between crystal structure and nonlinear optical properties of complex crystals

Second order nonlinear optical (NLO) properties of single crystals with complex structures are studied, from the chemical bond viewpoint. Contributions of each type of constituent chemical bond to the total linearity and nonlinearity are calculated from the actual crystal structure, using the chemical bond theory of complex crystals and the modified bond charge model. We have quantitatively proposed certain relationships between the crystal structure and its NLO properties. Several relations have been established from the calculation. Our method makes it possible for us to identify, predict and modify new NLO materials according to our needs. (C) 1999 Elsevier Science B.V. All rights reserved.

Correlation between chain conformations and optical anisotropy of thin films of an organo-soluble polyimide

An organo-soluble polyimide was successfully synthesized by two step polycondensation accompanied with chemical imidization. Optical anisotropy of thin films was detected by a prism-coupler technique. The results showed that the optical anisotropic properties of thin films prepared from solutions in different solvents depend on the solution properties. It is concluded that the more expanded the chain conformation in solution, the larger the negative birefringence of thin films. (C) 1997 Elsevier Science Ltd.

Soluble Angiopoietin Receptor Tie-2 In Patients With Acute Myocardial Infarction And Its Detection By Optical Protein-Chip

The Tie-2 receptor has been shown to play a role in angiogenesis in atherosclerosis. The conventional method assaying the level of soluble Tie-2 (sTie-2) was ELISA. However, this method has some disadvantages. The aims of this research are to establish a more simple detection method, the optical protein-chip based on imaging ellipsomtry (OPC-IE) applying to Tie-2 assay. The sTie-2 biosensor surface on silicon wafer was prepared first, and then serum levels of sTie-2 in 38 patients with AMI were measured on admission (day 1), day 2, day 3 and day 7 after onset of chest pain and 41 healthy controls by ELISA and OPC-IE in parallel. Median level of sTie-2 increased significantly in the AMI patients when compared with the controls. Statistics showed there was a significant correlation in sTie-2 results between the two methods (r=0.923, P0.01). The result of this study showed that the level of sTie-2 increased in AMI, and OPC-IE assay was a fast, reliable, and convenient technique to measure sTie-2 in serum.

Absolute measurement of roughness and lateral-correlation length of random surfaces by use of the simplified model of image-speckle contrast

We present a method of image-speckle contrast for the nonprecalibration measurement of the root-mean-square roughness and the lateral-correlation length of random surfaces with Gaussian correlation. We use the simplified model of the speckle fields produced by the weak scattering object in the theoretical analysis. The explicit mathematical relation shows that the saturation value of the image-speckle contrast at a large aperture radius determines the roughness, while the variation of the contrast with the aperture radius determines the lateral-correlation length. In the experimental performance, we specially fabricate the random surface samples with Gaussian correlation. The square of the image-speckle contrast is measured versus the radius of the aperture in the 4f system, and the roughness and the lateral-correlation length are extracted by fitting the theoretical result to the experimental data. Comparison of the measurement with that by an atomic force microscope shows our method has a satisfying accuracy. (C) 2002 Optical Society of America.

Energy spectrum of ground state and excitation spectrum of quasi-particle for hard-core boson in optical lattices

We investigate the energy spectrum of ground state and quasi-particle excitation spectrum of hard-core bosons, which behave very much like spinless noninteracting fermions, in optical lattices by means of the perturbation expansion and Bogoliubov approach. The results show that the energy spectrum has a single band structure, and the energy is lower near zero momentum; the excitation spectrum gives corresponding energy gap, and the system is in Mott-insulating state at Tonks limit. The analytic result of energy spectrum is in good agreement with that calculated in terms of Green's function at strong correlation limit.

Optical interconnection for neural networks by use of a self-imaging function

A grating-lens combination unit is developed to form a scaling self-transform function that can self-image on scale. Then an array of many such grating-lens units is used for the optical interconnection of a two-dimensional neural network, and experiments are carried out. We find that our idea is feasible, the optical interconnection system is simple, and optical adjustment is easy. (C) 1998 Optical Society of America.

Logic-operated mathematical morphology and its optical implementation

A more powerful tool for binary image processing, i.e., logic-operated mathematical morphology (LOMM), is proposed. With LOMM the image and the structuring element (SE) are treated as binary logical variables, and the MULTIPLY between the image and the SE in correlation is replaced with 16 logical operations. A total of 12 LOMM operations are obtained. The optical implementation of LOMM is described. The application of LOMM and its experimental results are also presented. (C) 1999 Optical Society of America.

Morphological ordered gray-scale erosion for optical image processing

An ordered gray-scale erosion is suggested according to the definition of hit-miss transform. Instead of using three operations, two images, and two structuring elements, the developed operation requires only one operation and one structuring element, but with three gray-scale levels. Therefore, a union of the ordered gray-scale erosions with different structuring elements can constitute a simple image algebra to program any combined image processing function. An optical parallel ordered gray-scale erosion processor is developed based on the incoherent correlation in a single channel. Experimental results are also given for an edge detection and a pattern recognition. (C) 1998 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(98)00306-7].

Investigations on optical properties of AlGaInN epilayers grown by mocvd

Microscopic luminescence and Raman scattering study was carried on AIInGaN quaternary alloy. Based on the analyses of SEM image and cathodoluminescence spectra measured around V-defects, the correlation between V-defect formation and indium segregation was clarified. Raman scattering of thin AlInGaN epilayers was investigated by using the short wavelength excitation of 325nm laser line. The frequency shift of A(1)(LO) phonon induced by the change of Al composition in alloy was observed. The Raman scattering of LO phonons was found to be resonantly enhanced with outgoing resonance, and it is attributed to the cascade-like electron-multiphonon interaction mechanism.