The cellular structure of a two-dimensional H2/O2/Ar detonation wave

In this paper, the cellular structure of a two-dimensional detonation wave in a low pressure H2/O2/Ar mixture calculated with a detailed chemical reaction model, high order scheme and high resolution grids is investigated. The regular cellular structure is produced about 1 ms after introducing perturbations in the reaction zone of a steady one-dimensional detonation wave. It is found from the present resolution study that the discrepancies concerning the structure type arising from the coarser grid employed can be resolved using a sufficiently fine grid size of 0.05 mm and below and shows a double-Mach-like strong-type configuration. During the structure evolution process, the structure configuration does not change much in the periods before and after the triple point collision. Through the triple point collision, three regular collision processes are observed and are followed by a quick change to the double-Mach-like configuration. The simulated structure tracks show that there are three different tracks associated with different triple points or the kink on the transverse wave. Comparisons with previous work and experiments indicate the presence of a strong structure for an ordinary detonation.

The Structure and Evolution of a Two-Dimensional H2/O2/Ar Cellular Detonation

This paper reports on two-dimensional numerical simulation of cellular detonation wave in a / / mixture with low initial pressure using a detailed chemical reaction model and high order WENO scheme. Before the final equilibrium structure is produced, a fairly regular but still non-equilibrium mode is observed during the early stage of structure formation process. The numerically tracked detonation cells show that the cell size always adapts to the channel height such that the cell ratio is fairly independent of the grid sizes and initial and boundary conditions. During the structural evolution in a detonation cell, even as the simulated detonation wave characteristics suggest the presence of an ordinary detonation, the evolving instantaneous detonation state indicates a mainly underdriven state. As a considerable region of the gas mixture in a cell is observed to be ignited by the incident wave and transverse wave, it is further suggested that these two said waves play an essential role in the detonation propagation.

层状Li(Ni1-xCox)O2中Li离子首次脱出和嵌入行为研究

共沉淀法合成的层状Li(Ni1-xCox)O2,其中x=0.1,0.2,0.3和1,采用XRD和电化学方法对合成的层状Li(Ni1-xCox)O2进行了研究.研究表明在镍酸锂中随着Co含量的增加,Co的增加改变了镍离子与周围氧离子和锂离子的相互作用,阻止了锂离子择优位离开镍酸锂晶体,因此,在镍酸锂中增加一定Co可以阻止镍酸锂由H1向M相转变.同理,在钴酸锂中增加一定Ni可以阻止钴酸锂由H1向H2相和H2相向M相转变.锂离子择优位离开镍酸锂时,存在J-T效应,使得镍酸锂在脱锂过程中发生H1向M相转变,与镍酸

射流式O2（^1△）发生器射流破断长度测量

实验研究了甘油-水溶液通过用不同加工方法和不同喷管长度／直径比的喷管形成射流的破断长度。射流的行为与喷管内是层流还是湍流的流动状态关系极大。当射流速度比较大时.喷管的缺陷如进口出口的毛刺和流道壁的粗糙度是诱发湍流使射流破断的主要原因。这些结果对化学氧碘激光的射流式O2(^1△)发生器的喷管设计和制造提供了有价值的参考。

Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm

A high laser-induced damage threshold (LIDT) TiO2/SiO2 high reflector (HR) at 1064 nm is deposited by e-beam evaporation. The HR is characterized by optical properties, surface, and cross section structure. LIDT is tested at 1064 nm with a 12 ns laser pulse in the one-on-one mode. Raman technique and scanning electron Microscope are used to analyze the laser-induced modification of HR. The possible damage mechanism is discussed. It is found that the LIDT of HR is influenced by the nanometer precursor in the surface, the intrinsic absorption of film material, the compactness of the cross section and surface structure, and the homogeneity of TiO2 layer. Three typical damage morphologies such as flat-bottom pit, delamination, and plasma scald determine well the nanometer defect initiation mechanism. The laser-induced crystallization consists well with the thermal damage nature of HR. (C) 2008 American Institute of Physics.

电子级气体N2、H2、O2、Ar、He、HCl、CO2、NH3 28种杂质分析技术及质量监控

于G批量导入至Hzhangdi

THE ADSORPTION OF O2 ON FESI SURFACES

The initial adsorption stages and the interaction of oxygen on FeSi surfaces have been studied as a function of exposure and annealing temperature using a variety of techniques including HREELS, AES, LEED, XPS and UPS. O2 was found to adsorb dissociatively on the FeSi surfaces at room temperature. The whole adsorption process can be divided into four stages. Heating promotes the oxidation of Si, and a thin SiO2 overlayer is formed on the surface when annealed at 450-degrees-C, while all FeOx species are reduced. Models for adsorbed atomic O on the FeSi(100) surface exposed to different oxygen exposures have been put forward to account for the observed experimental results.

O2在FeSi（100）表面的初始吸附研究

于2010-11-23批量导入

氧合血红蛋白Fe-O2键合态ab initio研究

于2010-11-23批量导入