国产掺镱双包层光纤的激光特性

采用MCVD方法研发了掺镱双包层光纤，并对其结构特性、荧光特性和激光特性进行了测试和研究。其D形内包层尺寸为400／450μm，数值孔径为0．36，纤芯直径约为16μm，数值孔径约为0．18。荧光谱线的范围为1000-1140nm，1030nm处的峰宽大于50nm。采用大功率激光二极管单端泵浦6m长的双包层光纤，在泵浦人纤功率为61W时，获得了32W的激光输出，斜率效率为64％。该光纤在高功率处未发现饱和现象，通过优化光纤参数与泵浦方式还可以提高转化效率和输出功率。实验表明该光纤可以取代进口光纤用作高功率

Efficient frequency upconversion emission in Er3+-doped novel strontium lead bismuth glass

Er3+ -doped strontium lead bismuth glass for developing upconversion lasers has been fabricated and characterized. The Judd-Ofelt intensity parameters Omega(1) (t = 2,4,6), calculated based on the experimental absorption spectrum and Judd-Ofelt theory, were found to be Omega(2) = 2.95 x 10(-20), Omega(4) = 0-91 X 10(-20), and Omega(6) = 0.36 x 10(-20) cm(2). Under 975 nm excitation, intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions H-2(11/2) --> I-4(15/2), S-4(3/2) I-4(15/2), and F-4(9/2) --> I-4(15/2) respectively were observed. The upconversion mechanisms are discussed based oil the energy matching and quadratic dependence on excitation power, and the dominant mechanisms are excited state absorption and energy transfer upconversion for the green and red emissions. The long-lived I-4(11/2) level is supposed to serve as the intermediate state responsible for the upconversion processes. (C) 2004 Published by Elsevier B.V.

Europium ion labeling anti-HBs

A microsecond time-resolved laser fluorescence spectroscopic analysis set was developed, A chelate-cyclic anhydride of diethylenetrimin pentaacetic acid anhydride (DTPAA) was synthesized. An anti-HBs antibody was purified, A EU3+ -DTPAA-anti-HBs label was prepared by two step procedure. We described the optimal condtion with EU3+ as marker and DTPAA as chelate bounding to antibody molecule. Labeling parameters such as solvent pH, protein and chelate molar ratio, reaction time, separation method were discussed in detail.

Simultaneous Laser-Induced Fluorescence And Contactless-Conductivity Detection For Microfluidic Chip

A combined detection system involving simultaneous LIF and contactless-conductometric measurements at the same place of the microfluidic chip was described. The LIF measurement was designed according to the confocal principle and a moveable contactless-conductivity detector was used in (CD)-D-4. Both measurements were mutually independent and advantageous in analyses of mixtures. Various experimental parameters affecting the response were examined and optimized. The performances were demonstrated by simultaneous detection of Rhodamine B. And the results showed that the combined detection system could be used sensitively and reliably. (C) 2008 Yong Yu. Published by Elsevier B.V. on behalf of Chinese Chemical Society. All rights reserved.

Dual Confocal Laser-Induced Fluorescence/Moveable Contactless Conductivity Detector For Capillary Electrophoresis Microchip

A new dual simultaneous detector was developed for capillary electrophoresis microchip. Confocal laser-induced fluorescence (LIF) and moveable contactless conductivity detection (MCCD) were combined together for the first time. The two detection systems shared a common detection cell and could respond simultaneously. They were mutually independent and advantageous in analyses of mixtures containing organic and inorganic ions. The confocal LIF had high sensitivity and the MCCD could move along the separation channel and detect in different positions of the channel. The detection conditions of the dual detector were optimized. Rhodamine B was used to evaluate the performance of the dual detector. The limit of detection of the confocal LIF was < 5 nM, and that of the MCCD was 0.1 mu M. The dual detector had highly sensitivity and could offer response easily, rapidly and simultaneously. 

Dual confocal laser-induced fluorescence/moveable contactless

A new dual simultaneous detector was developed for capillary electrophoresis microchip. Confocal laser-induced fluorescence (LIF) and moveable contactless conductivity detection (MCCD) were combined together for the first time. The two detection systems shared a common detection cell and could respond simultaneously. They were mutually independent and advantageous in analyses of mixtures containing organic and inorganic ions. The confocal LIF had high sensitivity and the MCCD could move along the separation channel and detect in different positions of the channel. The detection conditions of the dual detector were optimized. Rhodamine B was used to evaluate the performance of the dual detector. The limit of detection of the confocal LIF was <5 nM, and that of the MCCD was 0.1 μM. The dual detector had highly sensitivity and could offer response easily, rapidly and simultaneously.

Fluorescence properties and laser demonstrations of Nd-doped high silica glasses prepared by sintering nanoporous glass

Porous glass with high-SiO2 content was impregnated with Nd ions, and subsequently sintered at 1100 degrees C into a compact non-porous glass in air or reducing atmosphere. Sintering in a reducing atmosphere produced an intense violet-blue fluorescence at 394 nm. However, the sintering atmospheres almost did not affect the fluorescence properties in the infrared range. A good performance Nd3+-doped silica microchip laser operating at 1064 nm was demonstrated. The Nd-doped sintering glasses with high-SiO2 content are potential host materials for high power solid-state lasers and new transparent fluorescence materials. (c) 2007 Elsevier B.V. All rights reserved.

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.

Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes

Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10(-1)2) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.

Detection of Copper Ion with Laser-Induced Fluorescence in A Capillary Electrophoresis Microchip

A capillary electrophoresis microchip coupled with a confocal laser-induced fluorescence (LIF) detector was successfully constructed for the analysis of trace amounts of heavy metals in environmental sources. A new fluorescence dye, RBPhOH, synthesized from rhodamine B, was utilized in a glass microchip to selectively determine copper with high sensitivity. A series of factors including running buffer concentration, detection voltage, and sample loading time were optimized for maximum LIF detector response and, hence, method sensitivity.

A single-strand conformation polymorphism method by capillary electrophoresis with laser-induced fluorescence for detection of the T1151A mutation in hMLH1 gene

Mutation of hMLH1 gene plays an important role in human tumorigenesis. A highly sensitive single-strand conformation polymorphism (SSCP) method for detection of the T1151A mutation in exon 12 of the hMLH1 gene was for the first time developed employing laser-induced fluorescence capillary electrophoresis (LIF-CE). Effects of the concentration of linear polyacrylamide solution, running temperature, running voltage and the addition of glycerol on SSCP analysis were investigated, and the optimum separation conditions were defined. Thirty colorectal cancer patients and eight lung cancer patients were screened and the T1151A mutation was found in four of them. Based on CE-sequencing the mutation was further confirmed. To our knowledge, this is for the first time that the T1151A mutation is found in lung cancer. Our method is simple, rapid, and highly sensitive and is well suited to the analysis of large numbers of clinical samples.