Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques

Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

Color centers in Yb : YAG crystals grown by temperature-gradient techniques

Yb: YAG (Yb: Y3Al5O12) crystals have been grown by temperature-gradient techniques (TGT) and their color centers and impurity defects were investigated by means of gamma irradiations and thermal treatment. Two color centers located at 255 and 290 nm were observed in the as-grown TGT-Yb: YAG. Analysis shows that the 255 nm band may be associated with Fe3+ ions. Absorption intensity changes of the 290 nm band after gamma irradiation and thermal treatment indicate that this band may be associated with oxygen-vacancy defects. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS

We report the passivation of two deep copper-related acceptor levels in Cu-diffused p-type GaAs by the group-I element lithium. The deep-level-transient-spectroscopy (DLTS) signals of the well-known Cu-related levels with apparent activation energies 0.15 eV and 0.40 eV disappear in Cu-diffused samples when they are diffused with Li, but can be reactivated by annealing. Photoluminescence measurements show a corresponding disappearance and reappearance of the copper-related luminescence at 1.36 eV. Also we observe with DLT'S an energy level at E(V) + 0.32 eV in the Cu-Li-diff-used samples. The level is neither present in the Cu-diffused samples before Li diffusion nor in Cu-Li-diffused samples after annealing. As the level is not observed in starting materials or solely Li-diffused samples we suggest that it is related to a Cu-Li complex.

First-principle study of extrinsic defects in CuScO2 and CuYO2

Using first-principles methods, we studied the extrinsic defects doping in transparent conducting oxides CuMO2 (M=Sc, Y). We chose Be, Mg, Ca, Si, Ge, Sn as extrinsic defects to substitute for M and Cu atoms. By systematically calculating the impurity formation energy and transition energy level, we find that Be-Cu is the most prominent extrinsic donor and Ca-M is the prominent extrinsic acceptor. In addition, we find that Mg atom substituting for Sc is the most prominent extrinsic acceptor in CuSCO2. Our calculation results are expected to be a guide for preparing n-type and p-type materials through extrinsic doping in CuMO2 (M=SC, y). (C) 2008 Elsevier B.V. All rights reserved.

Impurity-free vacancy diffusion technique for InGaAsP/InP multiple quantum well laser structure

Bandgap tuning of the InGaAsP/InP multiple quant um well (MQW) laser structure by the impurity-free vacancy diffusion (IFVD) is investigated using photoluminescence. It has been demonstrated that the effects of the plasma bombardment to the:sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure. The reliability of the IFVD technique, particularly the effects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer, has been discussed.

Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP

The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe~(2+) concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP.

Application of room temperature ionic liquid-based extraction for metal ions

As a kind of novel green solvent, Room Temperature Ionic Liquids (RTILs) have been paid ever-increasing attentions in RTIL-based extraction for metal separation, since they have many unique proper-ties, such as non-volatile and non-flammable. The progress of that is mainly composed of the partition properties, mechanisms, defects, overcome methods and forecasts of the processes on the environmental analytical chemistry, has been reviewed.

Synthesis, structure and ionic conductivity of La2/3-xLi3xMoO4

A series of compounds, La2/3 - xLi3xMoO4, were first prepared. Their structures are tetragonal scheelites with the cationic defects. The cell parameters a, c and values of c/a decrease with the increasing of the substitution amount (3x) of lithium ion. Cationic vacancies are getting more as Li+ concentration is lower. The diffusion of lithium ion is predominant. The concentration of charge carriers increases with increasing the substitution amount (3x) of lithium ion, meanwhile, the concentration of cationic vacancies decreases. The conductivity approaches the best when the substitution amount (3x) of lithium ion is about 0.3. The conductivity of La0.567Li0.3MoO4 is 6.5 x 10(-6) S . cm(-1) at room temperature.

Deformation Defects in Nanocrystalline Nickel

Defects induced by plastic deformation in electrodeposited, fully dense nanocrystalline (nc) Ni with an average grain size of 25 nm have been characterized by means of high resolution transmission electron microscopy. The nc Ni was deformed under uniaxial tension at liquid-nitrogen temperature. Trapped full dislocations were observed in the grain interior and near the grain boundaries. In particular, these dislocations preferred to exist in the form of dipoles. Deformation twinning was confirmed in nc grains and the most proficient mechanism is the heterogeneous nucleation via emission of partial dislocations from the grain boundaries.

Atomistic Simulation On Size-Dependent Yield Strength And Defects Evolution Of Metal Nanowires

A simple derivation based on continuum mechanics is given, which shows the surface stress is critical for yield strength at ultra-small scales. Molecular dynamics (MD) simulations with modified embedded atom method (MEAM) are employed to investigate the mechanical behaviors of single-crystalline metal nanowires under tensile loading. The calculated yield strengths increasing with the decrease of the cross-sectional area of the nanowires are in accordance with the theoretical prediction. Reorientation induced by stacking faults is observed at the nanowire edge. In addition. the mechanism of yielding is discussed in details based on the snapshots of defects evolution. The nanowires in different crystallographic orientations behave differently in stretching deformation. This study on the plastic properties of metal nanowires will be helpful to further understanding of the mechanical properties of nanomaterials. (C) 2009 Elsevier B.V. All rights reserved.

The ionic exclusion-enrichment in a hybrid micro-/nano-channel

An ionic exclusion-enrichment phenomenon has been found at the ends of a nano-channel when electric-driven fluid passes through a micro-/nano-hybrid channel [1-3]. In our experiments, the hybrid channels are fabricated with two poly-dimethysiloxane (PDMS) monoliths microchannels (100um X20um X 9mm) and a nanoporous polycarbonate nuclear track-etched (PCTE) membrane (with 50nm pores). The flows are driven under different electrical potential and the test liquids with different PH values are used. The ion depletion in the source channel is observed by the MicroPIV system. In addition, the numerical simulations about ionic exclusion-enrichment in the hybrid channel are carried out. Some results are as followed:

Influence Of Micro-Impurity On Protein Crystal Growth Studied By The Etch Figure Method

The investigation of the effect of micro impurity on crystal growth by optical microscopy has been validated. The results showed that the growth rate of a lysozyme crystal was affected even if the concentration of impurity of fluorescent-labeled lysozyme (abbreviation, F-lysozyme) was very small. Different concentrations of F-lysozyme had different effects on crystal growth rate. The growth rate decreased much more as F-lysozyme concentration increased. The density of incorporated F-lysozyme on different grown layers of a lysozyme crystal during crystal growth was obtained from the results of flat-bottomed etch pits density. (C) 2008 Elsevier B.V. All rights reserved.

Energy transfer between silicon-oxygen-related defects and Yb3+ in transparent glass ceramics containing Ba2TiSi2O 8 nanocrystals

We report on the conversion of near-ultraviolet radiation of 250-350 nm into near-infrared emission of 970-1100 nm in Yb3+-doped transparent glass ceramics containing Ba2TiSi2O8 nanocrystals due to the energy transfer from the silicon-oxygen-related defects to Yb3+ ions. Efficient Yb3+ emission (F-2(5/2)-> F-2(7/2)) was detected under the excitation of defects absorption at 314 nm. The occurrence of energy transfer is proven by both steady state and time-resolved emission spectra, respectively, at 15 K. The Yb2O3 concentration dependent energy transfer efficiency has also been evaluated, and the maximum value is 65% for 8 mol % Yb2O3 doped glass ceramic. These materials are promising for the enhancement of photovoltaic conversion efficiency of silicon solar cells via spectra modification.

Effects of gamma-irradiation on Al2O3 crystals grown under reducing atmosphere

Gamma-ray irradiation-induced color centers in Al2O3 crystals grown by temperature gradient techniques (TGT) under a strongly reducing atmosphere were studied. The transition F+ -> F takes place during the irradiation process. Glow discharge mass spectroscopy (GDMS) and annealing treatments show that Fe3+ impurity ions are present in the crystals. A composite (F+-Fe3+) defect was presented to explain the origin of the 255 nm band absorption in the TGT-Al2O3 crystals. (C) 2006 Elsevier B.V. All rights reserved.

Effect of Fe impurity on the optical loss of Nd-doped phosphate laser glass

The optical loss coefficient at 1053-nm wavelength, influenced by Fe ions in N31-type Nd-doped phosphate laser glass, was determined precisely and analyzed in detail. It is found that the optical loss coefficient per unit of Fe concentration (cm^(-1)/ppmw) increases with Fe concentration in the range of 0---300 ppmw, but it approaches a constant as the Fe concentration is larger than 300 ppmw. Such a concentration effect is due to a shift in the redox equilibrium between Fe3+ and Fe2+ ions in the glass. The effect of oxygen pressure, temperature, and variable valence states of other metal ions in glass samples on the optical loss is also discussed.