Relationships Between Initial Unloading Slope, Contact Depth, and Mechanical Properties for Conical Indentation in Linear Viscoelastic Solids

Using analytical and finite element modeling, we examine the relationships between initial unloading slope, contact depth, and mechanical properties for spherical indentation in viscoelastic solids with either displacement or load as the independent variable. We then investigate whether the Oliver-Pharr method for determining the contact depth and contact radius, originally proposed for indentation in elastic and elastic-plastic solids, is applicable to spherical indentation in viscoelastic solids. Finally, the analytical and numerical results are used to answer questions raised in recent literature about measuring viscoelastic properties from instrumented spherical indentation experiments.

An In-Situ Observation On Initial Aggregation Process Of Colloidal Particles Near Three-Phase Contact Line Of Air, Water And Vertical Substrate

The self-assembling process near the three-phase contact line of air, water and vertical substrate is widely used to produce various kinds of nanostructured materials and devices. We perform an in-situ observation on the self-assembling process in the vicinity of the three phase contact line. Three kinds of aggregations, i.e. particle-particle aggregation, particle-chain aggregation and chain-chain aggregation, in the initial stage of vertical deposition process are revealed by our experiments. It is found that the particle particle aggregation and the particle-chain aggregation can be qualitatively explained by the theory of the capillary immersion force and mirror image force, while the chain-chain aggregation leaves an opening question for the further studies. The present study may provide more deep insight into the self-assembling process of colloidal particles.

On the initial unloading slope in indentation of elastic-plastic solids by an indenter with an axisymmetric smooth profile

A simple relationship between the initial unloading slope, the contact area, and the elastic modulus is derived for indentation in elastic-plastic solids by an indenter with an arbitrary axisymmetric smooth profile. Although the same expression was known to hold for elastic solids, the new derivation shows that it is also true for elastic-plastic solids with or without work hardening and residual stress. These results should provide a sound basis for the use of the relationship for mechanical property determination using indentation techniques. (C) 1997 American Institute of Physics.

Initial development of microdamage under impact loading

In this paper, the initial development of microdamage in material subjected to impulsive loading was investigated experimentally and analytically with controllable short-load duration. Based on a general solution to the statistical evolution of a one-dimensional system of ideal microcracks, a prerequisite to experimental investigation of nucleation of microcracks was derived. By counting the number of microcracks, the distribution of nucleation of microcracks was studied. The law of the nucleation rate of microcracks can be expressed as a separable function of stress and cracksize. It is roughly linear dependence on loading stress. The normalized number density of microcracks is in agreement with that of a second-phase particle.

Relationships between Initial Unloading Slope, Contact Depth, and Mechanical Properties for Spherical Indentation in Linear Viscoelastic Solids

Using analytical and finite element modeling, we examine the relationships between initial unloading slope, contact depth, and mechanical properties for spherical indentation in viscoelastic solids with either displacement or load as the independent variable. We then investigate whether the Oliver-Pharr method for determining the contact depth and contact radius, originally proposed for indentation in elastic and elastic-plastic solids, is applicable to spherical indentation in viscoelastic solids. Finally, the analytical and numerical results are used to answer questions raised in recent literature about measuring viscoelastic properties from instrumented spherical indentation experiments.

Occurrence of spanning of a submarine pipeline with initial embedment

For better understanding the mechanism of the occurrence of pipeline span for a pipeline with initial embedment, physical and numerical methods are adopted in this study. Experimental observations show that there often exist three characteristic phases in the process of the partially embedded pipeline being suspended: (a) local scour around pipe; (b) onset of soil erosion beneath pipe; and (c) complete suspension of pipe. The effects of local scour on the onset of soil erosion beneath the pipe are much less than those of soil seepage failure induced by the pressure drop. Based on the above observations and analyses, the mechanism of the occurrence of pipeline spanning is analyzed numerically in view of soil seepage failure. In the numerical analyses, the current-induced pressure along the soil surface in the vicinity of the pipe (i.e. the pressure drop) is firstly obtained by solving the N-S equations, thereafter the seepage flow in the soil is calculated with the obtained pressure drop as the boundary conditions along the soil surface. Numerical results indicate that the seepage failure (or piping) may occur at the exit of the seepage path when the pressure gradient gets larger than the critical value. The numerical treatment provides a practical tool for evaluating the potentials for the occurrence of pipe span due to the soil seepage failure.

Optimization of single attosecond x-ray pulses by genetic algorithm control of the chirp and initial phase of 5 fs laser pulses

We show that the peak intensity of single attosecond x-ray pulses is enhanced by 1 or 2 orders of magnitude, the pulse duration is greatly compressed, and the optimal propagation distance is shortened by genetic algorithm optimization of the chirp and initial phase of 5 fs laser pulses. However, as the laser intensity increases, more efficient nonadiabatic self-phase matching can lead to a dramatically enhanced harmonic yield, and the efficiency of optimization decreases in the enhancement and compression of the generated attosecond pulses. (c) 2006 Optical Society of America.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

Statistical investigation on morphology development of gallium nitride in initial growth stage

Morphology of Gallium Nitride (GaN) in initial growth stage was observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM), It was found that the epilayer developed from islands to coalesced film. Statistics based on AFM observation was carried out to investigate the morphology characteristics. It was found that the evolution of height distribution could be used to describe morphology development. Statistics also clearly revealed variation of top-face growth rate among islands. Indium-doping effect on morphology development was also statistically studied. The roughening and smoothing behavior in morphology development was explained. (C) 2002 Elsevier Science B.V. All rights reserved.

A geometrical model of GaN morphology in initial growth stage

Based on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on GaN in initial growth stage. Four parameters were introduced to describe the morphology characteristics in this model. Least-square fitting of height distribution was performed. The height distribution derived from the model agreed well with that obtained from experimental records. It was also found that the model should be further advanced to understand the growth of GaN in initial growth stage. (C) 2002 Elsevier Science BY. All rights reserved.