Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

The induction plasma chemical reactor: Part I. Equilibrium model

A mathematical model is presented for the numerical simulation of the flow, temperature, and concentration fields in an rf plasma chemical reactor. The simulation is performed assuming chemical equilibrium. The extent of validity of this assumption is discussed. The system considered is the reaction of SiCl4 and NH3 for the production of Si3N4.

The induction plasma chemical reactor: Part II. Kinetic model

A kinetic model has been developed for the prediction of the concentration gelds in an rf plasma reactor. A sample calculation for a SiCl4/H2 system is then performed. The model considers the mixing processes along with the kinetics of seven reactions involving the decomposition of these reactants. The results obtained are compared to those assuming chemical equilibrium. The predictions indicate that an equilibrium assumption will result in lower predicted temperature fields in the reactor. Furthermore, for the chemical system considered here, while differences exist between the concentration fields obtained by the two models, the differences are not substantial.

Control of Large-size SiC Growth Process Using Modeling tool

Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Optimization of Air Staging In A 1 Mw Tangentially Fired Pulverized Coal Furnace

This paper deals with an experimental study of air staging in a 1 MW (heat input power) tangentially fired pulverized coal furnace. The influences of several variables associated with air staging on NOx reduction efficiency and unburned carbon in fly ash were investigated, and these variables included the air stoichiometric ratio of primary combustion zone (SR1), the locations of over-fire air nozzles along furnace height, and the ratio of coal concentration of the fuel-rich stream to that of the fuel-lean one (RRL) in primary air nozzle. The experimental results indicate that SR1 and RRL have optimum values for NOx reduction, and the two optimum values are 0.85 and 3:1, respectively. NO, reduction efficiency monotonically increases with the increase of OFA nozzle location along furnace height. On the optimized operating conditions of air staging, NOx reduction efficiency can attain 47%. Although air staging can effectively reduce NOx emission, the increase of unburned carbon in fly ash should be noticed. (C) 2008 Elsevier B.V. All rights reserved.

Effect of coal-over-coal reburn on furnace temperature and heat flux distributions in 1 MW tangentially fired furnace

The furnace temperature and heat flux distributions of 1 MW tangentially fired furnace were studied during coal-over-coal reburn, and the influences of the position of reburn nozzle and reburn fuel fraction on furnace temperature and heat flux distributions were investigated. Compared with the baseline, the flue gas temperature is 70–90 C lower in primary combustion and 130–150 C higher at furnace exit, and the variations of the flue gas temperature distributions along furnace height are slower. The temperature distribution along the width of furnace wall decreases with the increase of the relative furnace height. In the primary combustion zone and the reburn zone, the temperature and heat flux distributions of furnace wall are much non-uniform and asymmetric along the width of furnace wall, those of furnace wall in the burnout zone are relatively uniform, and the temperature non-uniformity coefficients of the primary combustion zone, the reburn zone and the burnout zone are 0.290, 0.100 and 0.031, respectively.