Control of chemical reaction in high-intensity laser field

The prospects of control chemical reaction in high-intensity laser field are talked about here, and some experimental and theoretical designs are reviewed and discussed also.

高强度飞秒激光脉冲在空气中的自压缩

利用高重复频率(1kHz)、吉瓦级飞秒激光脉冲实验验证了高强度飞秒脉冲在空气中的自压缩现象，研究了入射脉冲在不同初始啁啾情况下经空气中聚焦成丝后，时域及频域特性随入射脉冲能量的变化规律．实验结果表明，在无需后继色散补偿情况下，高强度飞秒脉冲仅通过在空气中的非线性传输过程就可以实现脉冲压缩；在入射脉冲为负啁啾情况下，实验观察到脉冲光谱及时域宽度同时得到压缩，并可获得比激光源所能提供的更短的近双曲正割型变换限脉冲．

利用块状介质进行飞秒强激光脉冲的腔外压缩

高强度飞秒激光脉冲的腔外压缩是获得高次谐波阿秒脉冲驱动源的必要手段。实验研究了超强超短飞秒激光脉冲在经过块状介质后的光谱展宽和色散补偿压缩现象。单脉冲能量0．26mJ，脉宽50fs的激光脉冲经透镜在空气中聚焦后再入射到块状材料上，出射脉冲光谱被展宽到接近40nm。由于在块状材料中的自聚焦效应，出射光束质量变好并保持较小的空间啁啾。利用熔融石英棱镜对补偿带有正色散的出射脉冲，最后得到〉0．1mJ，19fs的压缩脉冲。利用SPIDER装置测量了出射脉冲的脉宽和光谱相位。整个系统的能量效率大约为35％，压缩后的

强流扇聚焦回旋加速器中空间电荷效应的研究

本文比较系统地介绍了扇聚焦回旋加速器内部的束流动力学及其注入系统的一般理论，并结合两台具体的扇聚焦回旋加速器的设计讨论了在回旋加速器以及静电反射镜内空间电荷效应对束流的影响。第一章简单介绍了回旋加速器的发展历史及分类、强流回旋加速器的应用，加速器驱动系统ADS(Accelerator Driving System)、能量放大器EA(Energy Amplifier)方案以及本文工作的主要内容。第二章首先介绍了扇聚焦回旋加速器的基本理论，包括扇聚焦回旋加速器内的轨道理论(静态平衡轨道及加速轨道性质)以及相空间的描述方法等。然后详细讨论了回旋加速器内空间电荷效应的影响及研究方法，包括空间电荷作用下粒子的运动方程、空间电荷电场的不同种类、求解空间电荷电场的基本方法和模型以及空间电荷效应对束流轨道特性和相空间传输特性的影响等。在本章的第4节中，介绍了两台强流扇聚焦回旋加速器(50MeV-6mA H_2~+超导扇聚焦回旋加速器和17MeV-2mA H~-扇聚焦回旋加速器)的具体设计步骤和计算结果,讨论了这两台扇聚焦回旋加速器中加速轨道和相空间的传输以及空间电荷效应的影响。最后，简单介绍了设计时所使用的两个计算程序AGORA_SCE和CINEZ_SCE。第三章首先简单介绍了用于扇聚焦回旋加速器的各种注入方法以及在轴向注入时所采用的不同种类的静电偏转镜。然后详细介绍了目前最常用的螺旋扇型静电偏转镜的基本工作原理，如参考粒子的运动轨道及偏转镜的光学性质等，讨论了螺旋线型静电偏转镜中空间电荷效应的影响。最后仍然以50MeV-6mAH_2~+和17MeV-2mA H~-这两台扇聚焦回旋加速器为例，对它们的静电偏转镜进行了设计，并分别研究了它们在空间电荷效应影响下的轨道特性及相空间传输特性。第四章简单介绍了工作中所用到的一些计算工具，如三维电磁场计算程序MAFIA以及等时场分析程序EQUIL，并给出了17MeV-2mA H~-扇聚焦回旋加速器的等时场的计算结果。论文的最后部分简单总结了本文的工作，并提出了今后进一步的工作设想。

紫菜壳孢子萌发过程及其世代差异研究

紫菜是一类海洋藻类研究的模式系统，具有重要的经济价值和理论研究意义。本研究基于紫菜的世代交替生活史，对其壳孢子萌发过程进行了研究，并对丝状孢子体与叶状配子体的世代差异进行了分析，主要包括以下三部分： 1） 对紫菜丝状孢子体与叶状配子体的连接枢纽——壳孢子的发育过程及其光影响进行了研究与讨论，发现壳孢子只有在附着后才能形成细胞壁并发育，说明壳孢子的附着是触发了壳孢子细胞壁的形成以及后期发育的开关，亦即附着是触发紫菜世代交替过程中配子体转录组表达的开关；纤维素酶和果胶酶均能抑制壳孢子附着，但影响机制各不相同，推测果胶质主要介导壳孢子的初始附着，而纤维素则与永久附着相关；波长≥580 nm的高强度（200 μmol•m-2•s-1）可见光有利于壳孢子早期发育。 2） 结合现有藻类数据，对坛紫菜丝状孢子体阶段11000 EST数据进行了大规模的生物信息学分析，结果首次发现坛紫菜丝状孢子体中可能存在PCK型C4光合固碳途径，并筛选出44条在紫菜孢子体中表达上调的代表基因。 3） 结合坛紫菜、条斑紫菜、海带和红毛菜，对红藻和褐藻等大型海藻孢子体与配子体阶段代表基因Rubisco的表达与羧化酶活性差异进行了研究分析，结果表明Rubisco的表达量和初始羧化酶活在其配子体中均显著高于其孢子体世代，即与藻体不同世代的相对复杂度无关，而与染色体倍性相关，说明Rubisco的世代差异极有可能与染色体倍性相连锁，因而可能是海藻世代交替过程中的重要功能基因。

Impact of cathode evaporation on a free-burning arc

A free-burning, high-intensity argon arc at atmospheric pressure was modelled during the evaporation of copper from the cathode. The effect of cathode evaporation on the temperature, mass flow, current flow and Cu concentration was studied for the entire plasma region. The copper evaporates from the tip of the cathode with an evaporation rate of 1 mg s-1. The copper vapour in the cathode region has a velocity of 210 m s-1 with a mass concentration of above 90% within 0.5 mm from the arc axis. The vapour passes from the cathode toward the anode with a slight diffusion in the argon plasma. Higher temperatures and current densities were calculated in the core of the arc caused by the cathode evaporation.

Interactions of a femtosecond intense laser with rare gas clusters in a dense jet\

A study on the interactions of high intensity (similar to 10(16) W/cm(2)) femtosecond laser pulses with rare gas clusters in a dense jet is performed. Energy absorption by Ar and Xe clusters is measured and it can be as high as 90%. Very energetic ions produced in the laser interaction with a dense cluster jet are detected by time-of-flight spectrometry and the maximum ion energy of Xe is up to 1.3 MeV. The average ion energies are found to increase with increasing cluster size and get saturated gradually. The average ion energies also show a strong directionality and the average ion energy in the direction parallel to the laser polarization vector is 40% higher than that perpendicular to it. The findings are discussed in terms of a model of charge-dependent ion acceleration.

Ion cascade acceleration from the interaction of a relativistic femtosecond laser pulse with a narrow thin target

Particle-in-cell simulations are performed to study the acceleration of ions due to the interaction of a relativistic femtosecond laser pulse with a narrow thin target. The numerical results show that ions can be accelerated in a cascade by two electrostatic fields if the width of the target is smaller than the laser beam waist. The first field is formed in front of the target by the central part of the laser beam, which pushes the electron layer inward. The major part of the abaxial laser energy propagates along the edges to the rear side of the target and pulls out some hot electrons from the edges of the target, which form another electrostatic field at the rear side of the target. The ions from the front surface are accelerated stepwise by these two electrostatic fields to high energies at the rear side of the target. The simulations show that the largest ion energy gain for a narrow target is about four times higher than in the case of a wide target. (c) 2006 American Institute of Physics.

影响单电子非线性汤姆孙散射因素的研究

应用电子汤姆孙散射的经典理论，通过理论分析和计算机模拟，研究了超短超强激光脉冲作用下电子产生的辐射脉冲的性质．计算表明，在这种情况下，电子的辐射通常以阿秒脉冲列的形式出现．讨沦了不同激光场参数(包括激光强度、脉宽、初相位和偏振态)、不同电子初始状态(初始速度和位置)对辐射脉冲的时间和空间特性的影响．通常在相对论光强条件下，激光强度越大，电子辐射越强，脉宽越窄，中心频率越大，并且方向性越好；电子在线偏振激光中产生的辐射效率，比在同样强度下圆偏振激光中产生的效率更高；无论入射光是线偏振光，还是圆偏振光，辐射场

Standing ultrashort relativistic solitons in overdense plasmas

By using a one-dimensional self-consistent relativistic fluid model, an investigation is made numerically on relativistic electromagnetic solitons with a high intensity in cold overdense plasmas with an electrons' initial velocity opposite to the laser propagating direction. Two types of standing solitons with zero group velocity are found at the given electrons' initial velocities. One is single-humped with a weakly relativistic intensity; the another is multi-humped with a strong relativistic amplitude. The properties of these two types of solitons are presented in detail.

TeO2-AlF3氟碲酸盐玻璃的性质和结构

制备了不同氟化物含量的（1-x）TeO2-AlF3（x=10％，20％，30％，按摩尔计）透明氟碲酸盐玻璃。利用差热分析和Raman光谱对玻璃的性质和结构进行研究。结果显示：当x达到30％时，氟化铝以Al-F多面体的形式进入玻璃网络结构。随着氟化物含量增加，玻璃在中红外区的透过率提高，玻璃结构单元从[Te（O，F）4]三方双锥向[Te（O，F）3]三方锥转变。Raman光谱显示：1个宽的强峰出现在750～840cm^-1，表明玻璃中Te-O键长介于0．185-0．196nm之间。

1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation

An InGaA1As multiquantum well (MQW) has been successfully overgrown on the absorptive InGaAsP corrugation for fabricating the 1.3 mu m gain coupled distributed feedback (DFB) lasers. The absorptive InGaAsP corrugation was efficaciously preserved during the overgrowth of the InGaA1As MQW active region. The absorptive InGaAsP corrugation has a relatively high intensity around the PL peak wavelength in comparison with that of the InGaA1As MQW. The fabricated DFB laser exhibited a side mode suppression ratio of 40 dB together with a high single-mode yield of 90%.

Plasmonic surface-wave splitter

The authors present an analysis of a plasmonic surface-wave splitter, simulated using a two-dimensional finite-difference time-domain technique. A single subwavelength slit is employed as a high-intensity nanoscale excitation source for plasmonic surface waves, resulting in a miniaturized light-surface plasmon coupler. With different surface structures located on the two sides of the slit, the device is able to confine and guide light waves of different wavelengths in opposite directions. Within the 15 mu m simulation region, it is found that the intensity of the guided light at the interface is roughly two to eight times the peak intensity of the incident light, and the propagation length can reach approximately 42 and 16 mu m and at the wavelengths of 0.63 and 1.33 mu m, respectively. (c) 2007 American Institute of Physics.

Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure

A buried grating structure with a selectively grown absorptive InGaAsP layer was fabricated and characterized by scanning electron microscopy and photoluminescence. The InP corrugation was etched by introducing a SiO2 mask that was more stable than a conventional photoresist mask during the etching process. Moreover, the corrugation was efficaciously preserved during the selective growth of the absorptive layer with the SiO2 mask. Though this absorptive layer was only selectively grown on the concave region of the corrugation, it has a high intensity around the peak wavelength in comparison with that of InGaAlAs multiple quantum well, which was grown on the buried grating structure.