81 resultados para Gas Sensors


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Pt-, Pd-, and Zr-doped SnO2 thin films and dopant-free VOx films were fabricated by planar magnetron sputtering. Tests for sensitivity to SO2 for all samples were conducted at 180 degreesC, and the sensitivities were investigated ex situ with photometric and ellipsometric methods at room temperature. It was found that the optical sensitivities as well as the sensitive wavelength region for SnO2 films could be tuned by doping. The Pd-doped SnO2 films had good sensitivity in the visible range, and the Zr-doped in the near IR. The dominant sensitive wavelength region for VOx films fell into the visible range, and the ratio of the sensitivity in the visible to that in the near IR increased with O-2/Ar in the depositing atmosphere. (C) 2001 society of Photo-Optical instrumentation Engineers .

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Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3 V at 300K is obtained at a fixed forward current after switching from N-2 to 10%H-2+N-2. The sensor responses under different concentrations from 50ppm H-2 to 10%H-2+N-2 at 373K are investigated. Time dependences of the device forward current at 0.5 V forward bias in N-2 and air atmosphere at 300 and 373K are compared. Oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity of the sensor are calculated.

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In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Nanostructured ZnO materials are of great significance for their potential applications in photoelectronic devices, light-emitting displays, catalysis and gas sensors. In this paper, we report a new method to produce large area periodical bowl-like micropatterns of single crystal ZnO through aqueous-phase epitaxial growth on a ZnO single crystal substrate. A self-assembled monolayer of polystyrene microspheres was used as a template to confine the epitaxial growth of single crystal ZnO from the substrate, while the growth morphology was well controlled by citrate anions. Moreover, it was found that the self-assembled monolayer of colloidal spheres plays an important role in reduction of the defect density in the epitaxial ZnO layer. Though the mechanism is still open for further investigation, the present result indicates a new route to suppress the dislocations in the fabrication of single crystal ZnO film. A predicable application of this new method is for the fabrication of two-dimensional photonic crystal structures on light emitting diode surfaces.

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Pt Schottky diode gas sensors for CO are fabricated using AlGaN/ GaN high electron mobility transistor ( HEMTs) structure. The diodes show a remarkable sensor signal (3 mA, in N-2; 2mA in air ambient) biased 2V after 1% CO is introduced at 50 degrees C. The Schottky barrier heights decrease for 36meV and 27meV in the two cases respectively. The devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure N2, which reveals that oxygen molecules could accelerate the desorption of CO and offer restrictions to CO detection.

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Stannic oxide xerogel was prepared by a forced hydrolysis method using SnCl4 as the precursor. The average grain sizes of the nanosized stannic oxide powders varied with the sintering temperatures. The powders were characterized by several different physico-chemical techniques. TEM was employed for the direct observation on grain sizes, shape and state of aggregation of the particles. XRD technique was used for the determination of the crystalline structure. Microstructural parameters of average crystallite size () and mean-square root microstrain (epsilon(2)>(1/2)) for the samples were calculated from the broadened values of the half-peak intensity of XRD. The atomic ratio between oxygen and tin in the surface region of the particles was estimated through the analysis of XPS. Attributing to lots of oxygen vacancies in the surface region of the nanoparticulates and the 'trapped electrons' in the vacancies, an ESR signal was observed in the sample sintered at 300 degrees C for 2 h. FTIR of the powders showed that intensity of the transverse optical mode of Sn-O stretching vibration increased with the sintering temperature while the bending vibration of O-Sn-O showed a blue shift. For Raman spectra, very important spectral characteristics such as variations of intensity and width of the bands were observed. A new Raman vibrational band located at 572 cm(-1) was identified in the samples of nanosized stannic oxide powders. Variation of these spectroscopic properties were strongly affected by grain size, shape and state of aggregation of the nanosized particulates.

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Density functional theory (DFT) calculations were employed to explore the gas-sensing mechanisms of zinc oxide (ZnO) with surface reconstruction taken into consideration. Mix-terminated (10 (1) over bar0) ZnO surfaces were examined. By simulating the adsorption process of various gases, i.e., H-2, NH3, CO, and ethanol (C2H5OH) gases, on the ZnO (10 (1) over bar0) surface, the changes of configuration and electronic structure were compared. Based on these calculations, two gas-sensing mechanisms were proposed and revealed that both surface reconstruction and charge transfer result in a change of electronic conductance of ZnO. Also, the calculations were compared with existing experiments.

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Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

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Unusual 3D flower-shaped SnS2 nanostructures have been synthesized using a mild hydrothermal treatment in the presence of octyl-phenol-ethoxylate ( Triton X-100) at 160 degrees C. The nanostructures have an average size of 1 mu m, and consist of interconnected nanosheets with thicknesses of about 40 nm. Based on time-dependent experimental results, we ascribe the oriented attachment mechanism to the growth of the SnS2 nanostructures. The nonionic surfactant Triton X-100 plays a key role in the formation of the flower-like morphology. Room temperature gas-sensing measurements show that the 3D SnS2 nanostructures could serve as sensor materials for the detection of NH3 molecules.

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In this paper, the fabrication method of a new type of carbon monoxide gas sensor based on SnOx with low power consumption and its sensing characteristics have been reported. The electric conductance of this type of sensor evolves oscillation form regularly when the sensor is exposed to low level of CO gas. The oscillation amplitude is directly proportional to the concentration of CO gas over a wide range. The effects of relevant factors. such as. humidity, temperature and interference gases on the sensor properties were examined. The sensing oscillation response mechanism was also discussed.

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The Langmuir-Blodgett (LB) composite films, ferric oxide nanoparticle composite with tris-(2,3-di-t-amylphenoxy)-(8-quinolinolinolyl) copper phthalocyanine (CuPcA(2)), were obtained by capped type and alternated type and characterized by X-ray photoelectron spectroscopy (XPS) and visible spectra. The gas sensitivity of the composite films and the pure ferric oxide and pure CuPcA(2) LB films to ammonia and ethanol were measured at room temperature. The composite films could be used as the C2H5OH sensors in the range of 2-8 or 100-200 ppm. The XPS data suggested that the adduct complex NH3-CuPcA(2) was formed after the capped film was exposed to the detected gas of ammonia. (C) 2000 Elsevier Science B.V. All rights reserved.

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The deposition of Langmuir-Blodgett film of neodymium bisphthalocyanine derivatives is reported for the first time. Optical absorption data reveal that these films call be deposited in a reproducible manner; results are also presented showing the extreme sensitivity and selectivity of their electrical conductivity to NH3 in room temperature. The Nd bisphthalocyanine LB film is a sensitive, reproducible. rapid and stable gas sensor. Neodymium bisphthalocyanine derivatives will be candidates for thin film gas-sensitive materials. (C) 1998 Elsevier Science S.A. All rights reserved.

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利用基于分子模型的统计模拟方法--信息保存方法(IP)统计模拟了实验条件下微槽道气体流动,仔细讨论了用IP方法模拟长槽道稀薄气流时遇到的问题,并给出了解决的方法,即采取守恒形式的控制方程避免质量流量计算误差积累,并利用超松弛方法使收敛过程加速。将IP计算结果与压力分布和质量流量实验数据进行了比较。

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The thermal properties of a micro-electromechanical system sensor were analysed by a novel digital moire method. A double-layer micro-cantilever sensor (60 mu m long, 10 mu m width and 2 mu dm thick) was prepared by focused ion beam milling. A grating with frequency of 5000 lines mm- I was etched on the cantilever. The sensor was placed into a scanning electron microscope system with a high temperature device. The observation and recording of the thermal deformation of the grating were realised in real-time as the temperature rose from room temperature to 300 degrees C at intervals of 50 degrees C. Digital moire was generated by interference of the deformed grating and a digital virtual grating. The thermal properties including strain distribution of the sensor and the linear expansion coefficient of polysilicon were accurately measured by the phase-shifted moire patterns.