143 resultados para Broadband tuning


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A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm(2) only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

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A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.

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This paper represents a LC VCO with AAC (Auto Amplitude Control), in which PMOS FETs are used as active components, and the varactors are directly connected to ground to widen Kvco linear range. The AAC circuitry adds little noise to the VCO and provides it with robust performance over a wide temperature and carrier frequency range. The VCO is fabricated in 50-GHz 0.35-mu m SiGe BiCMOS process. The measurement results show that it has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole circuit draws 6.6-mA current from 5.0-V supply.

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Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.

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The InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy technique. The properties of materials and optics of such QD structures have been investigated by cross sectional transmission electron microscopy and photoluminescence (PL) techniques. It is discovered that the inhomogeneous strain filed mainly exists below InAs QDs layers in the case of no wetting layer. The full width at half maximums (FWHMs) and intensities of PL emission peaks of InAs QDs are found to be closely related to the thickness of the thin AlAs layers. The InAs QDs on an eight monolayer AlAs layer, with wide FWHMs and large integral intensity of PL emission peaks, are favorable for producing broadband QD superluminescent diodes, external-cavity QD laser with large tuning range.

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Switchable multiwavelength fiber laser outputs with a wide tuning range are experimentally observed in an ultralong cavity. Because of the long spooled single-mode fiber and filter effect of the cavity, multiwavelength lasers with the spacing of similar to 14.5 nm are obtained. The proposed fiber laser has the capacity of simultaneously emitting the three wavelengths. By means of adjusting the polarization controllers, the arbitrary single- and dual-wavelength operations are achieved in our laser. (C) 2010 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3485754]

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Fibrillar structures are common features on the feet of many animals, such as geckos, spiders and flies. Theoretical analyses often use periodical array to simulate the assembly, and each fibril is assumed to be of equal load sharing (ELS). On the other hand, studies on a single fibril show that the adhesive interface is flaw insensitive when the size of the fibril is not larger than a critical one. In this paper, the Dugdale Barenblatt model has been used to study the conditions of ELS and how to enhance adhesion by tuning the geometrical parameters in fibrillar structures. Different configurations in an array of fibres are considered, such as line array, square and hexagonal patterns. It is found that in order to satisfy flaw-insensitivity and ELS conditions, the number of fibrils and the pull-off force of the fibrillar interface depend significantly on the fibre separation, the interface interacting energy, the effective range of cohesive interaction and the radius of fibrils. Proper tuning of the geometrical parameters will enhance the pull-off force of the fibrillar structures. This study may suggest possible methods to design strong adhesion devices for engineering applications.

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Near-degenerative near-collinear phase-match geometry for broadband optical parametric chirped-pulse amplification (OPCPA) at approximate to 780 nm is calculated in comparison with nondegenerate noncollinear phase-match geometry. In an experiment on LBO-I near-degenerate near-collinear OPCPA, high gain with broad gain bandwidth (approximate to 71 nm, FWHM) at approximate to 780 nm is achieved by using an approximate to 390-nm pumping pulse. The stretched broadband chirped signal pulse near 780 nm is amplified to approximate to 412 mu J with a pumping energy of approximate to 15 mJ, and the total gain is > 3.7 X 10(6), which agrees well with the calculation. For a broadband (covering approximate to 100 nm) chirped signal pulse, the theoretical gain bandwidth has been attained experimentally for the first time. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

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Near-degenerative near-collinear phase-match geometry for broadband optical parametric chirped-pulse amplification (OPCPA) at approximate to 780 nm is calculated in comparison with nondegenerate noncollinear phase-match geometry. In an experiment on LBO-I near-degenerate near-collinear OPCPA, high gain with broad gain bandwidth (approximate to 71 nm, FWHM) at approximate to 780 nm is achieved by using an approximate to 390-nm pumping pulse. The stretched broadband chirped signal pulse near 780 nm is amplified to approximate to 412 mu J with a pumping energy of approximate to 15 mJ, and the total gain is > 3.7 X 10(6), which agrees well with the calculation. For a broadband (covering approximate to 100 nm) chirped signal pulse, the theoretical gain bandwidth has been attained experimentally for the first time. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

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We investigate high-order harmonic emission and isolated attosecond pulse (IAP) generation in atoms driven by a two-colour multi-cycle laser field consisting of an 800 nm pulse and an infrared laser pulse at an arbitrary wavelength. With moderate laser intensity, an IAP of similar to 220 as can be generated in helium atoms by using two-colour laser pulses of 35 fs/800 nm and 46 fs/1150 nm. The discussion based on the three-step semiclassical model, and time-frequency analysis shows a clear picture of the high-order harmonic generation in the waveform-controlled laser field which is of benefit to the generation of XUV IAP and attosecond electron pulses. When the propagation effect is included, the duration of the IAP can be shorter than 200 as, when the driving laser pulses are focused 1 mm before the gas medium with a length between 1.5 mm and 2 mm.

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We build a compact high-conversion-efficiency and broadband tunable noncollinear optical parametric amplifier (OPA) in the infra-red (IR) pumped by a femtosecond Ti:sapphire CPA laser. The OPA consists of an internal seed of white-light continuum generator (WLG) and two noncollinear optical parametric amplifiers. The tunable wavelength range is from 1.2 mu m to 2.4 mu m for both signal and idle pulses. The total OPA efficiency in the last OPA stage reaches about 40% in a wider tunable spectral range (from 1.3 mu m to 1.7 mu m for signal pulse, from 1.5 mu m to 2.0 mu m for idle pulse respectively).

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An ultra-broadband Ti:sapphire regenerative amplifier based on spatially dispersed amplification is demonstrated experimentally. Departing from previous reports, a new design of the cavity gets the amplified pulse free from spatial chirp. Utilizing this new regenerative amplifier, chirped pulses with bandwidth (FWHM) of about 80 nm are obtained, and the bandwidth is limited only by that of the incident seed pulses.

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Widely tunable optical parametric amplification (OPA) in the IR region through quasi-phase-matching technology is demonstrated theoretically in periodically-poled lithium niobate (PPLN). For a 532nm pump wavelength and a broadband signal wavelength near 1300 nm, we can obtain the optimum grating period from phase-matching curves for different grating periods to achieve continuously tunable OPA by tuning the angle in a small range. Tunable OPA range of 200nm near 1300 mn can be obtained with a tuning incidence signal angle of 2.2 degrees.

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Bi-doped BaF2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF2 crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi2+ or Bi+ centers adjacent to F vacancy defects are the origins of the observed NIR emissions. (C) 2009 Optical Society of America

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Transparent Ni2+-doped beta-Ga2O3 glass-ceramics were synthesized. The nanocrystal phase in the glass-ceramics was identified to be beta-Ga2O3 and its size was about 3.6 nm. It was confirmed from the absorption spectra that the ligand environment of Ni2+ ions changed from the trigonal bi-pyramid fivefold sites in the as-cast glass to the octahedral sites in the glass-ceramics. The broadband infrared emission centering at 1270 nm with full width at half maximum (FWHM) of more than 250 nm was observed. The fluorescence lifetime was about 1.1 mu s at room temperature. The observed infrared emission could be attributed to the T-3 (2g) (F-3) -> (3)A (2g) (F-3) transition of octahedral Ni2+ ions. It is suggested that the Ni2+-doped transparent beta-Ga2O3 glass-ceramics with broad bandwidth and long lifetime have a potential as a broadband amplification medium.