High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T

Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O

A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area guowth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mX output light power of 4.5 mW and over 20 dB extinction ratio when coupled into a single mode Fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using I this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.

结构弛豫对Zr_(64.13)Cu_(15.75)Ni_(10.12)Al_(10)块体非晶合金硬度和剪切带特征的影响

通过接近玻璃转变温度的等温退火获得不同弛豫状态的Zr64.13Cu15.75Ni10.12Al10块体非晶合金样品。利用维氏显微硬度计和洛氏硬度计研究结构弛豫对合金硬度和压痕周围剪切带特征的影响规律。结果表明:在590K等温退火处理使Zr64.13Cu15.75Ni10.12Al10块体非晶合金发生焓弛豫行为,其维氏显微硬度随退火时间的延长较快增加后趋于稳定,而大载荷洛氏硬度对结构弛豫不敏感。通过洛氏压痕周围剪切带特征的研究,定量比较了结构弛豫对剪切带间距、数量的影响规律。

第13届美国复合材料学会技术年会简介

一．会议概况１．美国复合材料学会第１３届年会（Ｔｈｅ１３ｔｈＴｅｃｈｎｉｃａｌＣｏｎｆｅｒｅｎｃｅｏｆＡｍｅｒｉｃａｎＳｏｃｉｅｔｙｆｏｒＣｏｍｐｏｓｉｔｅ），于１９９８年９月２１～２３日在美国巴尔的摩（Ｂａｌｔｉｍｏｒｅ）举行，会议由马理兰大学（Ｍ...

激光熔覆大厚度Fe_(57)Co_8Ni_8Zr_(10)Si_4B_(13)非晶表层及其微结构研究

利用激光熔覆制备出1.2mm厚的Fe_(57)Co_8Ni_8Zr_(10)Si_4B_(13)大厚度非晶表层。用XRD,ES,TEM,DSC及硬度对获得的非晶表层进行了多种分析，研究了非晶合金表层的微结构与非晶形成能力。初步探讨了大厚度非晶表层的形式机制。

Freestanding optical fibers fabricated in a glass chip by femtosecond laser micromachining for lab-on-a-chip application (vol 13, pg 7225, 2005)

An erratum is presented to correct the propagation loss of the freestanding optical fibers fabricated in glass chip. (c) 2006 Optical Society of America.

Effect of hydroxyl groups on nonradiative decay of Er3+: I-4(13/2)-> I-4(15/2) transition in zinc tellurite glasses

A series of zinc tellurite glasses of 75TeO(2)-20ZnO-(5-x)La2O3-xEr(2)O(3) (x=0.02, 0.05, and 0.1 mol%) with the different hydroxl groups were prepared by the conventional melt-quenching method. Infrared spectra were measured in order to estimate the exact content of OH- groups in samples. The observed increase of the fluorescence lifetime with the oxygen bubbling time has been related to the reduction in the OH- content concentration as evidenced by IR transmission spectra. Various nonradiative decay rates from I-4(13/2) of Er3+ with. the change of OH content were determined from the fluorescence lifetime and radiative decay rates were calculated on the basis of Judd-Ofelt theory. (c) 2005 Elsevier B.V. All rights reserved.