204 resultados para 331.13


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Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

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采用分子束外延方法在CaAs(331)A高指数衬底上制备自对齐InAs纳米线(QWRs)或者三维(3D)岛状结构.InAs纳米线(QWRs)选择性生长在CaAs层的台阶边缘.通过原子力显微镜(AfM)仔细研究了InAs纳米微结构的表面形貌,发现不同的生长条件,包括:衬底温度、生长速率、和InAs层厚度等,对InAa表面形貌有很大的影响.如,低温更容易导致线状纳米微结构的形成,而高温更利于3D岛状结构形成.表面形貌的转变归结于表面能同应变能之间的竞争.

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通过接近玻璃转变温度的等温退火获得不同弛豫状态的Zr64.13Cu15.75Ni10.12Al10块体非晶合金样品。利用维氏显微硬度计和洛氏硬度计研究结构弛豫对合金硬度和压痕周围剪切带特征的影响规律。结果表明:在590K等温退火处理使Zr64.13Cu15.75Ni10.12Al10块体非晶合金发生焓弛豫行为,其维氏显微硬度随退火时间的延长较快增加后趋于稳定,而大载荷洛氏硬度对结构弛豫不敏感。通过洛氏压痕周围剪切带特征的研究,定量比较了结构弛豫对剪切带间距、数量的影响规律。

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一.会议概况1.美国复合材料学会第13届年会(The13thTechnicalConferenceofAmericanSocietyforComposite),于1998年9月21~23日在美国巴尔的摩(Baltimore)举行,会议由马理兰大学(M...

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利用激光熔覆制备出1.2mm厚的Fe_(57)Co_8Ni_8Zr_(10)Si_4B_(13)大厚度非晶表层。用XRD,ES,TEM,DSC及硬度对获得的非晶表层进行了多种分析,研究了非晶合金表层的微结构与非晶形成能力。初步探讨了大厚度非晶表层的形式机制。

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An erratum is presented to correct the propagation loss of the freestanding optical fibers fabricated in glass chip. (c) 2006 Optical Society of America.

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A series of zinc tellurite glasses of 75TeO(2)-20ZnO-(5-x)La2O3-xEr(2)O(3) (x=0.02, 0.05, and 0.1 mol%) with the different hydroxl groups were prepared by the conventional melt-quenching method. Infrared spectra were measured in order to estimate the exact content of OH- groups in samples. The observed increase of the fluorescence lifetime with the oxygen bubbling time has been related to the reduction in the OH- content concentration as evidenced by IR transmission spectra. Various nonradiative decay rates from I-4(13/2) of Er3+ with. the change of OH content were determined from the fluorescence lifetime and radiative decay rates were calculated on the basis of Judd-Ofelt theory. (c) 2005 Elsevier B.V. All rights reserved.