激光场控制双暗态原子系统中若干动力学行为研究

系统介绍了在激光场控制双暗态原子系统动力学行为研究中得到的若干新现象，其中包括相干叠加态的制备、四波混频转换效率的提高以及无吸收巨克尔非线性的实现等。

2W Yb-doped double-clad fiber superfluorescent source with 42 nm 3 dB bandwidth

The output spectrum of Yb-doped double-clad fiber superfluorescent source (SFS) is tailored by placing a broadband dichroic mirror in the pump end of conventional single-pass forward configuration, which constitutes double-pass forward configuration. The 3 dB bandwidth is increased from I I to 42 nm. A maximum output SFS power of 2.12 W and a slope efficiency of 43.2% are obtained. The double-clad fiber is 25 in and the pump power is adequate to saturate the fiber as far as the feedback-induced lasing appears. (c) 2004 Elsevier Ltd. All rights reserved.

猪线粒体DNA多态性与中国地方猪种起源分化的关系

用24种限制性内切酶分析了我国21个具代表性地方猪品种、1个引进品种和2个来自中国和越南的野生近缘种mtDNA的RFLP。结果表明:在74个个体中检出的32种限制性态型可归结成7种单倍型,其间的差异主要来源于少数几个限制性位点的点突变;地方猪种4种单倍型间的平均遗传距离为0.143％,遗传多态程度(π值)仅为0.007％,说明遗传多样性非常贫乏,提示中国地方猪种可能起源于一个野猪亚种。

Evidence of gene conversion in the evolutionary process of the codon 41/42 (-CTTT) mutation causing beta-thalassemia in southern China

The 4-bp deletion (-CTTT) at codon 41/42 (CD41/42) of the human beta-globin gene represents one of the most common beta-thalassemia mutations in East Asia and Southeast Asia, which is historically afflicted with endemic malaria, thus hypothetically evolvi

榴绒粉蚧发生规律及其综合防治研究

：榴城粉蚧是云南蒙自石榴的主要害虫之一，1年发生4代．世代重叠。以成虫、若虫越冬。主要危害代第1，2代 成虫．若虫入果实萼筒中或果与果、果与叶片相接处取食危害，致果皮伤口并将干腐病茵侍入伤口处．果皮伤口经首 次连续降雨雨水浸泡溢出的汁液为干肩病菌提供了生长繁殖条件．谊虫是干腐病的媒介者。一般年份果园有虫株、 果率选85％～95％，75％～90％。采取综合防治后，有虫株、果率降为20％～25％，10％～15％。

CRANIODENTAL VARIATION OF MACAQUES ( Macaca ): SIZE,FUNCTION AND PHYLOGENY

为了研究猕猴属的颅骨差异性, 从而探 讨种间在形态、功能和系统分化方面的相互联系, 测定了11 个猕猴种类的77 个颅骨变量, 用于主成 分分析和判别分析。应用巢式分析方法, 分析过程 包括3 个步骤。所有变量根据功能和部位的不同首 先分为7 个单位: 下颌、下颌齿、上颌齿、上面 颅、下面颅、面颅后部和颅腔。第2 步根据它们所 揭示的相似性(具有相同的种间及种内差异性类 型) 合并为3 个解剖区域: 咀嚼器官(下颌、下颌 齿、上颌齿) , 面颅(上面颅和下面颅) 和整个面 颅后(面颅后和颅腔) 。第3 步从3 个解剖区域筛 选出27 个变量代表整个颅骨的形态结构。除了寻 找不同的功能单位, 解剖区域及总的颅骨具有不同 的种间和种内差异类型外, 此过程对筛出研究意义 不大的变量起很重要的作用。上述分析过程分别用 于对雌、雄性和两性的研究。所研究的11 个猕猴 种类间形成了3 聚类。第1 类包括食蟹猴(Macaca f ascicularis) 、戴帽猴( M1 sinica) 和头巾猴( M1 radiata) ; 第2 类包括猕猴( M1 mulatta ) 、熊猴 (M1 assensis ) 、平顶猴( M1 nemestrina ) 和黑猿 (M1 nigra) ; 第3 类包括蛮猴( M1 sylvanus ) 、日 本猴( M1 f uscata) 、短尾猴( M1 arctoides ) 和藏 酋猴(M1 thibetana) 。分别从两性差异、食物、生态、分类和系统分化方面进行了差异性讨论, 结果 认为猕猴种间颅骨的差异性主要是由于系统分化不 同而引起个体差异所致, 即种间和种内存在的个体 差异。在主成分分析中, 这些差异在不同的区域表 现在不同的成分上。在咀嚼器官上种间的差异在第 1 主成分上, 种内的差异则在第2 主成分上。面颅 的情况则刚好相反。这两种差异在面颅后及颅腔上 则被第1 和第2 主成分所平分。这样, 种间的差异 在咀嚼器官上大于种内的差异。种内的差异在面颅 上则大于种间的差异。这两种差异在面颅后和颅腔 上则几乎大小相等。这一研究结果表明, 与传统的 概念不同, 第2 主成分不仅仅表现形态、形状的差 异, 而如同第1 主成分一样, 也表现形态的大小成 分。此研究所揭示的猕猴种间关系部分与Foden (1976 , 1980) 和Delson (1980) 相同。如平顶猴 与黑猿、短尾猴、藏酋猴和熊猴的关系。食蟹猴、 头巾猴和戴帽猴的关系则不同, 并已得到有关分子 生物学的支持, 此3 种可能来自同一祖先并经历相 同的扩散过程。此研究所设计的巢式分析过程提供 了一种很好的差异性研究手段。最终结果暗示在形 态学研究中仅仅考虑某一区域的形态结构是很不够 的, 因为不同的部分具有不同的种间及种内差异类 型。这在化石研究中尤其要注意。

免疫印迹技术的一些改进

其它部委、高等院校基金

植物防御素研究进展

植物防御素是一类分子量小、呈碱性、富含半胱氨酸的短肽.通常在很低的浓度下(10-6mol.L-1)就能表现出广谱抗菌活性,它是植物防御体系的基本组成成分之一,可以用来研制新型的杀菌剂,在植物抗病基因工程等方面发挥着重要作用.对其结构特征、类型、生物合成、表达调控、抗菌机理及其基因工程等方面的研究进行了汇总,对其应用前景进行了展望.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE

Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.