液层厚度对浮力-热毛细对流面型的影响

将Michelson光学干涉测量系统与图像处理技术相结合,发展形成一种实时诊断热毛细对流和浮力对流流体表面形貌的实验测量系统.采用光学干涉测量方法研究了两端带有温差的矩形池内薄层流体的对流、表面变形、以及表面波的基本问题.应用Fourier变换方法对实验结果进行计算和分析,得到了流体表面变形和表面波的定量的实验结果.实验结果表明了在浮力-热毛细对流的发展过程中,首先出现流体的表面变形,之后在该变形的基础上,叠加了一个表面波的信息,该表面变形和表面波与流体的温度梯度、表面张力、以及浮力有直接的关系;表面波隐藏在表面变形内.

Parametric excitation of Rb-87 atoms in a quadrupole-Ioffe-configuration trap

We have experimentally studied the parametric excitation of Rb-87 atoms in a quadrupole-Ioffe-configuration trap. The temperature of an atomic cloud and number of trapped atoms versus time and modulation frequency of the parametric excitation field have been measured. We also noticed that the contribution of atomic collisions to the energy distributions can not be ignored in the case of weak excitation, which results in a lower temperature of the atomic cloud than by Gehm [Phys. Rev. A 58, 3914 (1998)] predicted.

克隆植物的分布及其与环境和物种多样性的关系

　　中国植被的1860个样方资料的统计结果表明，克隆植物存在于不同类型的生态系统中，并在大部分生态系统中占有重要地位。同非克隆植物相比，克隆植物大多具有更强的适应环境压力的能力。在高纬度、高海拔地区，克隆植物的丰富度较高。在寒冷、低氮含量、养分贫瘠的生境中出现频率较高。在高山草甸、冻原、高山裸岩和砾石稀疏植被带等胁迫生境中克隆植物占的比例较高。克隆植物中，具有不同克隆生长器官的植物在不同生境中出现频率不同。根起源克隆植物在低纬度、低海拔，以及较温暖、湿润的生境中丰富度较高，相反，茎起源克隆植物在高纬度、高海拔，较寒冷、干旱的生境中丰富度较高。根起源克隆植物中，根出条型植物的生境条件和根起源克隆植物的相同，出现在灌丛、阔叶林和竹林中的频率较高;茎起源克隆植物中，根茎型植物的生境条件和茎起源植物的相同，出现在水生植被、草甸和草原中的频率较高，而匍匐茎型植物在较温暖、湿润、阴蔽的生境中出现频率较高。不同克隆生长构型的植物对生境的适应性不同。密集型克隆植物在高纬度、高海拔，寒冷、养分贫瘠生境中较丰富，如高山灌丛、草原，荒漠草原;同密集型克隆植物相比，游击型克隆植物在低纬度、低海拔，相对温暖、湿润的生境中丰富度较高，如水生植被、草甸。 　　在低植物密度生境中，物种多样性随密集型和游击型克隆植物相对重要值的增加而增加。在高植物密度生境中，高度密集的密集型克隆分株，阻止其它物种的定居，容易形成局部垄断的格局，从而降低群落物种多样性。当游击型克隆植物进入高密度生境中时，它会借助于其分散分株的空间扩展优势迅速在生境中取得优势地位，排斥其它物种，导致物种多样性的降低。群落中克隆性与多样性的关系同植物的克隆生长构型和克隆植物种群内部的调节机制，以及植物的生境状况有关系。在低密度生境中，物种多样性随克隆植物重要性的增加而增加，在高密度生境中，物种多样性随克隆植物重要性的增加而降低。克隆性与多样性的关系还需要通过生态学实验深入研究。

猕猴的半透明带分析法——精子活动度和卵母细胞成熟度对精卵结合率的影响

透明带是精卵相互作用的首要部位,精子与透明带结合是受精过程中初始而关键的一步,这与精子活力和卵的成熟度密切相关.目前检测精子的受精潜力和探讨精卵相互作用的机理尚无较理想的实验模型,Burkman等首先在人的体外受精(IVF)研究中建立的半透明带分析法(Hemizona assay,HZA),利用一分为二,功能相同的半透明带,在进行精子与透明带结合及相互作用的比较研究中,具有明显的优点.利用HZA检测精子活力与受精率的关系在人的IVF中得到肯定的验证.应用HZA还发现,不同发育阶段的卵(超数排卵方法获

Temperature dependence of absorption edge in MOCVD grown GaN

We have studied the temperature dependence of absorption edge of GaN thin films grown on sapphire substrate by metal-organic chemical vapor deposition using optical absorption spectroscopy. A shift in absorption edge of about 55 meV has been observed in temperature range 273-343 K. We have proposed a theoretical model to find the energy gap from absorption coefficient using alpha = alpha(max) + (alpha(min) - alpha(max))/[1 + exp 2(E - E-g + KT)/KT]. Temperature dependence of band gap has also been studied by finding an appropriate theoretical fit to our data using E-g(T) = E-g(273 K) - (8.8 x 10(-4)T(2))/(483 + T) + 0.088 (Varshni empirical formula) and E-g(T) = E-g(273 K)-0.231447/[exp(362/T)-1] + 0.082 relations. It has been found that data can be fitted accurately after adding a factor similar to 0.08 in above equations. Debye temperature (483 K) and Einstein temperature (362 K) in the respective equations are found mutually in good agreement.

Progress of Si-based nanocrystalline luminescent materials

Si-based nanomaterials are some new photoeletronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e. g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nano-scale porous silicon (ps), Si nanocrystalline embedded SiO2 (SiOx, x < 2.0) matrices, Si nanoquantum dot and Si/SiO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.

后弯管波力发电浮标模型性能试验研究

为改进后弯管波力发电浮标的性能，对多种模型进行了新一轮试验研究。测定了它们的气室平均输出气流功率随波周期的变化曲线NA－T；试验了不同质量对性能的影响；测出了不同喷咀比ε的波高比Hi／Ho、压力比ΔPi／Ho和波能转换效率ηA。确定了最佳浮体——前方后园浮室后伸型后弯管浮体的尺寸、质量和性能参数。

800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser

A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror with low temperature method and surface state method combined absorber is presented.With which passive Kerr lens mode locking of Ti∶Al2O3 laser pumped by argon ion laser is realized,which produces pulses as short as 40fs.The spectrum bandwidth is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.