Comparisons between 28 Gb/s NRZ, PAM, CAP and optical OFDM systems for datacommunication applications

Theoretical investigations have been performed to analyze and compare the link power budget and power dissipation of a 28 Gb/s datacommunication system for data center switch scenarios using NRZ, PAM-4, CAP-16 and 16-QAM-OFDM modulation schemes. © 2012 IEEE.

Gigabit NRZ, CAP and optical OFDM systems over POF links using LEDs

Simulations have been performed to compare the system capacity and power dissipation of NRZ, CAP-64 and 64-QAM-OFDM systems over FEC enhanced POF links using LEDs, for both unidirectional and bidirectional transmission. It is shown that CAP-64 outperforms NRZ and 64-QAM-OFDM in terms of system capacity and supports a record high 3.5Gb/s bidirectional and 2.1Gb/s unidirectional transmissions over 50m POF. The CAP-64 transceiver consumes similar power compared with NRZ whilst the 64-QAM-OFDM transceiver consumes about twice as much. © 2012 Optical Society of America.

Performance and power dissipation comparisons between 28 Gb/s NRZ, PAM, CAP and optical OFDM systems for data communication applications

Theoretical investigations have been carried out to analyze and compare the link power budget and power dissipation of non-return-to-zero (NRZ), pulse amplitude modulation-4 (PAM-4), carrierless amplitude and phase modulation-16 (CAP-16) and 16-quadrature amplitude modulation-orthogonal frequency division multiplexing (16-QAM-OFDM) systems for data center interconnect scenarios. It is shown that for multimode fiber (MMF) links, NRZ modulation schemes with electronic equalization offer the best link power budget margins with the least power dissipation for short transmission distances up to 200 m; while OOFDM is the only scheme which can support a distance of 300 m albeit with power dissipation as high as 4 times that of NRZ. For short single mode fiber (SMF) links, all the modulation schemes offer similar link power budget margins for fiber lengths up to 15 km, but NRZ and PAM-4 are preferable due to their system simplicity and low power consumption. For lengths of up to 30 km, CAP-16 and OOFDM are required although the schemes consume 2 and 4 times as much power respectively compared to that of NRZ. OOFDM alone allows link operation up to 35 km distances. © 1983-2012 IEEE.

Comparisons between gigabit NRZ, CAP and optical OFDM systems over FEC enhanced POF links using LEDs

Simulations have been performed to compare the link power budget and power dissipation of carrierless amplitude and phase modulation-64 (CAP-64) and 64-quadrature amplitude modulation-orthogonal frequency division multiplexing (64-QAM-OFDM) systems over feedforward error correction (FEC) enhanced plastic optical fibre (POF) links using light emitting diodes (LEDs). It is shown that CAP-64 outperforms 64-QAM-OFDM and supports record high 2.1Gb/s over 50m POF transmission. The CAP-64 and 64-QAM-OFDM links consume similar powers which are 2 (2.5) times of that of NRZ for the single POF link (twin POF links) case. © 2012 IEEE.

FEC-free 50 m 1.5 Gb/s plastic optical fibre link using CAP modulation for home networks

LED-based carrierless amplitude and phase modulation is investigated for a multi-gigabit plastic optical fibre link. An FPGA-based 1.5 Gbit/s error free transmission over 50 m standard SI-POF using CAP64 is achieved, providing 2.9 dB power margin without forward error correction. © 2012 OSA.

Comparison of 100 Gb/s Ethernet links using PAM-8, multi-pulse, and hybrid CAP-16/QAM-16 modulation schemes

A theoretical study compares 100 Gb/s Ethernet links and finds that multi-pulse and hybrid CAP-16/QAM-16 (PAM-8) schemes support transmission over 10 km (2 km) SMF. Multi-pulse and CAP-16/QAM-16 need 2× the number of arithmetic operations and 7× or 3× the number of filter taps respectively but exhibit reduced power dissipation compared with PAM-8.

FEC-free 50 m 1.5 Gb/s plastic optical fibre link using CAP modulation for home networks

LED-based carrierless amplitude and phase modulation is investigated for a multi-gigabit plastic optical fibre link. An FPGA-based 1.5 Gbit/s error free transmission over 50 m standard SI-POF using CAP64 is achieved, providing 2.9 dB power margin without forward error correction. © 2012 Optical Society of America.

Experimental demonstration of optical data links using a hybrid CAP/QAM modulation scheme.

The first known experimental demonstrations of a 10 Gb/s hybrid CAP-2/QAM-2 and a 20 Gb/s hybrid CAP-4/QAM-4 transmitter/receiver-based optical data link are performed. Successful transmission over 4.3 km of standard single-mode fiber (SMF) is achieved, with a link power penalty ∼0.4 dBo for CAP-2/QAM-2 and ∼1.5 dBo for CAP-4/QAM-4 at BER=10(-9).

High performance optical data links using hybrid CAP/QAM transmitter/receiver scheme

We experimentally demonstrate the first optical data link at 20Gb/s using hybrid CAP- 4/QAM-4 with transmission over 4.3km SSMF and a power penalty ~1.5dBo at BER=10-9. The hybrid CAP-4/QAM-4 link significantly outperforms a reference PAM-4 link. © OSA 2013.

40 Gb/s carrierless amplitude and phase modulation for low-cost optical datacommunication links

4 bps/Hz 40 Gb/s carrierless amplitude and phase (CAP) modulation is investigated for next-generation datacommunication links. The 40 Gb/s link achieves double the length of a conventional NRZ scheme, despite using a low-bandwidth source. © 2011 Optical Society of America.

Selective epitaxial growth in silicon on insulator: Planarity and mass flow

Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5-1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.

A packaging technique for silicon MEMS strain sensors on steel

A packaging technique suited to applying MEMS strain sensors realized on a silicon chip to a steel flat surface is described. The method is based on adhesive bonding of the silicon chip rear surface on steel using two types of glue normally used for standard piezoresistive strain sensors (Mbond200/ 600), using direct wire bonding of the chip to a Printed Circuit Board, also fixed on steel. In order to protect the sensor from the external environment, and to improve the MEMS performance, the silicon chip is encapsulated with a metal cap hermetically sealed-off under vacuum condition with a vacuum adhesive in which the bonding wires are also protected from possible damage. In order to evaluate the mechanical coupling of the silicon chip with the bar and thestress transfer extent to the silicon surface, commercial strain sensors have been applied on the chip glued on a steel bar in alaboratory setup able to generate strain by inflection, yielding a stress transfer around 70% from steel to silicon. © 2008 IEEE.