23 resultados para Active power interpolation

em Cambridge University Engineering Department Publications Database


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The first monolithically integrated 44 switch with power monitoring function using on-chip PIN photodiodes is reported. Using 10Gb/s signals, under active power control an IPDR of 12dB for a 1dB power penalty is achieved. © 2012 OSA.

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High-power converters usually need longer dead-times than their lower-power counterparts and a lower switching frequency. Also due to the complicated assembly layout and severe variations in parasitics, in practice the conventional dead-time specific adjustment or compensation for high-power converters is less effective, and usually this process is time-consuming and bespoke. For general applications, minimising or eliminating dead-time in the gate drive technology is a desirable solution. With the growing acceptance of power electronics building blocks (PEBB) and intelligent power modules (IPM), gate drives with intelligent functions are in demand. Smart functions including dead time elimination/minimisation can improve modularity, flexibility and reliability. In this paper, a dead-time minimisation using Active Voltage Control (AVC) gate drive is presented. © 2012 IEEE.

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Cascaded 4×4 SOA switches with on-chip power monitoring exhibit potential for lowpower 16×16 integrated switches. Cascaded operation at 10Gbit/s with an IPDR of 8.5dB and 79% lower power consumption than equivalent all-active switches is reported © 2013 OSA.

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Active Voltage Control (AVC) is an implementation of classic Proportional-Derivative (PD) control and multi-loop feedback control to force IGBT to follow a pre-set switching trajectory. The initial objective of AVC was mainly to synchronise the switching of IGBTs connected in series so as to realise voltage balancing between devices. For a single IGBT switching, the AVC reference needs further optimisation. Thus, a predictive manner of AVC reference generation is required to cope with the nonlinear IGBT switching parameters while performing low loss switching. In this paper, an improved AVC structure is adopted along with a revised reference which accommodates the IGBT nonlinearity during switching and is predictive based on current being switched. Experimental and simulation results show that close control of a single IGBT switching is realised. It is concluded that good performance can be obtained, but the proposed method needs careful stability analysis for parameter choice. © 2013 IEEE.