The modulated grating hologram

A phase and amplitude, off-axis hologram has been synthesized from three computer-generated transmission masks, using a multiple-exposure holographic recording method. Each of the masks controls one fixed-phase component of the complex hologram transmittance. The basic grating is generated optically, relieving the computer of the burden of drawing details the size of each fringe. The maximum information capacity of the computer plotting device can then be applied to the generation of the grating modulation function. By this method large digital holograms (25 mm by 25 mm) have been synthesized in dichromated gelatin. The recording method is applicable to virtually any holographic medium.

The modulated grating hologram was designed primarily for the application of spatial filtering, in which the requirement is a hologram with large dynamic range and large free spectral range. Choice of a low-noise, high-efficiency medium such as dichromated gelatin will allow exceptionally large dynamic range. Independence of the optically-generated carrier grating from the computer-generated modulation functions allows arbitrarily large free spectral range.

The performance of a holographic spatial filter will be limited ultimately by noise originating from imperfections in the holographic medium. The characteristics of this noise are analyzed, and in the case of a high diffraction efficiency hologram are shown to differ significantly from previous analyses. The dominant noise source in holograms of high diffraction efficiency will be scattering of the first order or imaging wave by deformations in the hologram surface or other effects of low spatial frequency. Experimental measurements in various low-noise holographic media verify these predictions.

A fundamental approach to phase noise reduction in hybrid Si/III-V lasers

Spontaneous emission into the lasing mode fundamentally limits laser linewidths. Reducing cavity losses provides two benefits to linewidth: (1) fewer excited carriers are needed to reach threshold, resulting in less phase-corrupting spontaneous emission into the laser mode, and (2) more photons are stored in the laser cavity, such that each individual spontaneous emission event disturbs the phase of the field less. Strong optical absorption in III-V materials causes high losses, preventing currently-available semiconductor lasers from achieving ultra-narrow linewidths. This absorption is a natural consequence of the compromise between efficient electrical and efficient optical performance in a semiconductor laser. Some of the III-V layers must be heavily doped in order to funnel excited carriers into the active region, which has the side effect of making the material strongly absorbing.

This thesis presents a new technique, called modal engineering, to remove modal energy from the lossy region and store it in an adjacent low-loss material, thereby reducing overall optical absorption. A quantum mechanical analysis of modal engineering shows that modal gain and spontaneous emission rate into the laser mode are both proportional to the normalized intensity of that mode at the active region. If optical absorption near the active region dominates the total losses of the laser cavity, shifting modal energy from the lossy region to the low-loss region will reduce modal gain, total loss, and the spontaneous emission rate into the mode by the same factor, so that linewidth decreases while the threshold inversion remains constant. The total spontaneous emission rate into all other modes is unchanged.

Modal engineering is demonstrated using the Si/III-V platform, in which light is generated in the III-V material and stored in the low-loss silicon material. The silicon is patterned as a high-Q resonator to minimize all sources of loss. Fabricated lasers employing modal engineering to concentrate light in silicon demonstrate linewidths at least 5 times smaller than lasers without modal engineering at the same pump level above threshold, while maintaining the same thresholds.

Strength of thin-walled elliptical cylinders supported at the minor axis

In this investigation it was found that the instability failure of curved sheet is nearly independent of the type of loading and is primarily a function of the maximum stress, radius-thickness ration and modulus of elasticity. A method of correlating the critical stress of thin sheet under several different types of loading is given. An explanation for the experimental critical stress of thin walled cylinders under bending being greater than that for pure compression is given. The strength of unstiffened thin walled circular nose sections under pure bending was found to be controlled by local instability of the section, rather than a large scale instability. The equation of local instability of curved sheet gives values which are in fair agreement with those found experimentally.

The strength of elliptical cylinders supported at the minor axis under bending plus shear loads is governed primarily by the bending strength, and is little effected by the sheer force unless the amount of shear is quite large with respect to the moment. The effect of increasing the amount of elliptically greatly reduces the bending and shear strength of nose sections. Under torsional loads the stress at buckling falls off as the ration of the major to minor axis increases but the failure stress decreases at a slower rate than the buckling stress. The length effect of semi-circular sections under torsion is similar to that of a circular tube, and can be obtained by Donnell's theoretical equation.

Holistic Design In High-Speed Optical Interconnects

Integrated circuit scaling has enabled a huge growth in processing capability, which necessitates a corresponding increase in inter-chip communication bandwidth. As bandwidth requirements for chip-to-chip interconnection scale, deficiencies of electrical channels become more apparent. Optical links present a viable alternative due to their low frequency-dependent loss and higher bandwidth density in the form of wavelength division multiplexing. As integrated photonics and bonding technologies are maturing, commercialization of hybrid-integrated optical links are becoming a reality. Increasing silicon integration leads to better performance in optical links but necessitates a corresponding co-design strategy in both electronics and photonics. In this light, holistic design of high-speed optical links with an in-depth understanding of photonics and state-of-the-art electronics brings their performance to unprecedented levels. This thesis presents developments in high-speed optical links by co-designing and co-integrating the primary elements of an optical link: receiver, transmitter, and clocking.

In the first part of this thesis a 3D-integrated CMOS/Silicon-photonic receiver will be presented. The electronic chip features a novel design that employs a low-bandwidth TIA front-end, double-sampling and equalization through dynamic offset modulation. Measured results show -14.9dBm of sensitivity and energy efficiency of 170fJ/b at 25Gb/s. The same receiver front-end is also used to implement source-synchronous 4-channel WDM-based parallel optical receiver. Quadrature ILO-based clocking is employed for synchronization and a novel frequency-tracking method that exploits the dynamics of IL in a quadrature ring oscillator to increase the effective locking range. An adaptive body-biasing circuit is designed to maintain the per-bit-energy consumption constant across wide data-rates. The prototype measurements indicate a record-low power consumption of 153fJ/b at 32Gb/s. The receiver sensitivity is measured to be -8.8dBm at 32Gb/s.

Next, on the optical transmitter side, three new techniques will be presented. First one is a differential ring modulator that breaks the optical bandwidth/quality factor trade-off known to limit the speed of high-Q ring modulators. This structure maintains a constant energy in the ring to avoid pattern-dependent power droop. As a first proof of concept, a prototype has been fabricated and measured up to 10Gb/s. The second technique is thermal stabilization of micro-ring resonator modulators through direct measurement of temperature using a monolithic PTAT temperature sensor. The measured temperature is used in a feedback loop to adjust the thermal tuner of the ring. A prototype is fabricated and a closed-loop feedback system is demonstrated to operate at 20Gb/s in the presence of temperature fluctuations. The third technique is a switched-capacitor based pre-emphasis technique designed to extend the inherently low bandwidth of carrier injection micro-ring modulators. A measured prototype of the optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit based on the monolithic PTAT sensor consumes 0.29mW.

Lastly, a first-order frequency synthesizer that is suitable for high-speed on-chip clock generation will be discussed. The proposed design features an architecture combining an LC quadrature VCO, two sample-and-holds, a PI, digital coarse-tuning, and rotational frequency detection for fine-tuning. In addition to an electrical reference clock, as an extra feature, the prototype chip is capable of receiving a low jitter optical reference clock generated by a high-repetition-rate mode-locked laser. The output clock at 8GHz has an integrated RMS jitter of 490fs, peak-to-peak periodic jitter of 2.06ps, and total RMS jitter of 680fs. The reference spurs are measured to be –64.3dB below the carrier frequency. At 8GHz the system consumes 2.49mW from a 1V supply.