I. Reactively sputtered Ti-Si-N thin films for diffusion barrier applications. II. Oxidation, diffusion and crystallization of an amorphous Zr_(60)Al_(15)Ni_(25) alloy.

Films of Ti-Si-N obtained by reactively sputtering a TiSi_2, a Ti_5Si_3, or a Ti_3Si target are either amorphous or nanocrystalline in structure. The atomic density of some films exceeds 10^23 at./cm^3. The room-temperature resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 hour decreases the resistivity of the Ti-rich films deposited from the Ti_5Si_3 or the Ti_3Si target, but increases that of the Si-rich films deposited from the TiSi_2 target when the nitrogen content exceeds about 30 at. %.

Ti_(34)Si_(23)N_(43) deposited from the Ti_5Si_3 target is an excellent diffusion barrier between Si and Cu. This film is a mixture of nanocrystalline TiN and amorphous SiN_x. Resistivity measurement from 80 K to 1073 K reveals that this film is electrically semiconductor-like as-deposited, and that it becomes metal-like after an hour annealing at 1000 °C in vacuum. A film of about 100 nm thick, with a resistivity of 660 µΩcm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C upon 30 min vacuum annealing. When used between Si and Al, the maximum temperature of stability is 550 °C for 30 min. This film can be etched in a CF_4/O_2 plasma.

The amorphous ternary metallic alloy Zr_(60)Al_(15)Ni_(25) was oxidized in dry oxygen in the temperature range 310 °C to 410 °C. Rutherford backscattering and cross-sectional transmission electron microscopy studies suggest that during this treatment an amorphous layer of zirconium-aluminum-oxide is formed at the surface. Nickel is depleted from the oxide and enriched in the amorphous alloy below the oxide/alloy interface. The oxide layer thickness grows parabolically with the annealing duration, with a transport constant of 2.8x10^(-5) m^2/s x exp(-1.7 eV/kT). The oxidation rate is most likely controlled by the Ni diffusion in the amorphous alloy.

At later stages of the oxidation process, precipitates of nanocrystalline ZrO_2 appear in the oxide near the interface. Finally, two intermetallic phases nucleate and grow simultaneously in the alloy, one at the interface and one within the alloy.

Observations of nitrogen and oxygen isotopes in the low energy cosmic rays

The isotopic composition of the enhanced low energy nitrogen and oxygen cosmic rays can provide information regarding the source of these particles. Using the Caltech Electron/Isotope Spectrometer aboard the IMP-7 satellite, a measurement of this isotopic composition was made. To determine the isotope response of the instrument, a calibration was performed, and it was determined that the standard range-energy tables were inadequate to calculate the isotope response. From the calibration, corrections to the standard range-energy tables were obtained which can be used to calculate the isotope response of this and similar instruments.

The low energy nitrogen and oxygen cosmic rays were determined to be primarily ^(14)N and ^(16)O. Upper limits were obtained for the abundances of the other stable nitrogen and oxygen isotopes. To the 84% confidence level the isotopic abundances are: ^(15)N/N ≤ 0.26 (5.6- 12.7 MeV/nucleon), ^(17)0/0 ≤ 0.13 (7.0- 11.8 MeV/nucleon), (18)0/0 ≤ 0.12 (7.0 - 11.2 MeV/nucleon). The nitrogen composition differs from higher energy measurements which indicate that ^(15)N, which is thought to be secondary, is the dominant isotope. This implies that the low energy enhanced cosmic rays are not part of the same population as the higher energy cosmic rays and that they have not passed through enough material to produce a large fraction of ^(15)N. The isotopic composition of the low energy enhanced nitrogen and oxygen is consistent with the local acceleration theory of Fisk, Kozlovsky, and Ramaty, in which interstellar material is accelerated to several MeV/nucleon. If, on the other hand, the low energy nitrogen and oxygen result from nucleosynthesis in a galactic source, then the nucleosynthesis processes which produce an enhancement of nitrogen and oxygen and a depletion of carbon are restricted to producing predominantly ^(14)N and ^(16)O.

A balloon measurement of the isotopic composition of galactic cosmic ray boron, carbon, and nitrogen

The isotopic compositions of galactic cosmic ray boron, carbon, and nitrogen have been measured at energies near 300 MeV amu^-1, using a balloon-borne instrument at an atmospheric depth of ~5 g cm^-2. The calibrations of the detectors comprising the instrument are described. The saturation properties of the cesium iodide scintilla tors used for measurement of particle energy are studied in the context of analyzing the data for mass. The achieved rms mass resolution varies from ~ 0.3 amu at boron to ~ 0.5 amu at nitrogen, consistent with a theoretical analysis of the contributing factors. Corrected for detector interactions and the effects of the residual atmosphere, the results are ^(10)B/B = 0.33^(+0.17)_(-0.11), ^(13)C/C = 0.06^(+0.13)_(-0.01), and ^(15)N/N = 0.42 (+0.19)_(-0.17). A model of galactic propagation and solar modulation is described. Assuming a cosmic ray source composition of solar-like isotopic abundances, the model predicts abundances near earth consistent with the measurements.