New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

Fluctuations in a tokamak plasma

An experimental investigation of low frequency floating potential fluctuations (f ≤ 200 kHz) in a research tokamak plasma using two spatially separated electrostatic probes has been performed. The spectra, correlation length, and the phase velocity of the fluctuations in both the radial and azimuthal direction have been determined. The propagation velocity in the toroidal direction was also measured and was found to be in the direction of electron current flow. The waves traveled azimuthally in the ion diamagnetic drift direction, even after the usual E x B rotation was taken into account. The electron density fluctuations associated with these oscillations were large, δn/n ≃ 0.35 - 0.50.

The spectra were found to have regularly spaced peaks which seemed to be related to specific azimuthal modes (m =1,2,3,...,etc. ) A parametric study was made to determine what effect plasma parameters had on these peaks. During periods of high electron density in the first 2 msec of the plasma lifetime, strong sawtooth type oscillations were observed. These oscillations typically had frequencies of approximately 10 kHz and were also present when large amounts of neutral gas were added during the discharge by a process called "gas puffing."

The results are compared with experimental observations made on other plasma devices with electric and magnetic probes and with microwave and CO₂ laser scattering techniques. (The scattering measurements are complimentary to the probe measurements since, in the former case, the wavelength is fixed by the scattering angle, but the oscillations could not be spatially localized.) The oscillations in the Caltech torus were probably related to a drift-tearing type instability which is thought to play a major role in the anomalous particle and energy flux observed in tokamaks. Comparisons are made between current theory and the experimental results. However, the theory for the observed oscillations is still in a rudimentary stage of development, and it is hoped that the present investigation will stimulate future analytical work.

Gas laser discharge noise and its effect on the laser output

A large portion of the noise in the light output of a laser oscillator is associated with the noise in the laser discharge. The effect of the discharge noise on the laser output has been studied. The discharge noise has been explained through an ac equivalent circuit of the laser discharge tube.

The discharge noise corresponds to time-varying spatial fluctuations in the electron density, the inverted population density and the dielectric permittivity of the laser medium from their equilibrium values. These fluctuations cause a shift in the resonant frequencies of the laser cavity. When the fluctuation in the dielectric permittivity of the laser medium is a longitudinally traveling wave (corresponding to the case in which moving striations exist in the positive column of the laser discharge), the laser output is frequency modulated.

The discharge noise has been analyzed by representing the laser discharge by an equivalent circuit. An appropriate ac equivalent circuit of a laser discharge tube has been obtained by considering the frequency spectrum of the current response of the discharge tube to an ac voltage modulation. It consist of a series ρLC circuit, which represents the discharge region, in parallel with a capacitance C', which comes mainly from the stray wiring. The equivalent inductance and capacitance of the discharge region have been calculated from the values of the resonant frequencies measured on discharge currents, gas pressures and lengths of the positive column. The experimental data provide for a set of typical values and dependencies on the discharge parameters for the equivalent inductance and capacitance of a discharge under laser operating conditions. It has been concluded from the experimental data that the equivalent inductance originates mainly from the positive column while the equivalent capacitance is due to the discharge region other than the positive column.

The ac equivalent circuit of the laser discharge has been shown analytically and experimentally to be applicable to analyzing the internal discharge noise. Experimental measurements have been made on the frequency of moving striations in a laser discharge. Its experimental dependence on the discharge current agrees very well with the expected dependence obtained from an analysis of the circuit and the experimental data on the equivalent circuit elements. The agreement confirms the validity of representing a laser discharge tube by its ac equivalent circuit in analyzing the striation phenomenon and other low frequency noises. Data have also been obtained for the variation of the striation frequency with an externally-applied longitudinal magnetic field and the increase in frequency has been attributed to a decrease in the equivalent inductance of the laser discharge.