Coding for information storage

Storage systems are widely used and have played a crucial rule in both consumer and industrial products, for example, personal computers, data centers, and embedded systems. However, such system suffers from issues of cost, restricted-lifetime, and reliability with the emergence of new systems and devices, such as distributed storage and flash memory, respectively. Information theory, on the other hand, provides fundamental bounds and solutions to fully utilize resources such as data density, information I/O and network bandwidth. This thesis bridges these two topics, and proposes to solve challenges in data storage using a variety of coding techniques, so that storage becomes faster, more affordable, and more reliable.

We consider the system level and study the integration of RAID schemes and distributed storage. Erasure-correcting codes are the basis of the ubiquitous RAID schemes for storage systems, where disks correspond to symbols in the code and are located in a (distributed) network. Specifically, RAID schemes are based on MDS (maximum distance separable) array codes that enable optimal storage and efficient encoding and decoding algorithms. With r redundancy symbols an MDS code can sustain r erasures. For example, consider an MDS code that can correct two erasures. It is clear that when two symbols are erased, one needs to access and transmit all the remaining information to rebuild the erasures. However, an interesting and practical question is: What is the smallest fraction of information that one needs to access and transmit in order to correct a single erasure? In Part I we will show that the lower bound of 1/2 is achievable and that the result can be generalized to codes with arbitrary number of parities and optimal rebuilding.

We consider the device level and study coding and modulation techniques for emerging non-volatile memories such as flash memory. In particular, rank modulation is a novel data representation scheme proposed by Jiang et al. for multi-level flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. It eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. In order to decrease the decoding complexity, we propose two variations of this scheme in Part II: bounded rank modulation where only small sliding windows of cells are sorted to generated permutations, and partial rank modulation where only part of the n cells are used to represent data. We study limits on the capacity of bounded rank modulation and propose encoding and decoding algorithms. We show that overlaps between windows will increase capacity. We present Gray codes spanning all possible partial-rank states and using only ``push-to-the-top'' operations. These Gray codes turn out to solve an open combinatorial problem called universal cycle, which is a sequence of integers generating all possible partial permutations.

Rewriting Schemes for Flash Memory

Flash memory is a leading storage media with excellent features such as random access and high storage density. However, it also faces significant reliability and endurance challenges. In flash memory, the charge level in the cells can be easily increased, but removing charge requires an expensive erasure operation. In this thesis we study rewriting schemes that enable the data stored in a set of cells to be rewritten by only increasing the charge level in the cells. We consider two types of modulation scheme; a convectional modulation based on the absolute levels of the cells, and a recently-proposed scheme based on the relative cell levels, called rank modulation. The contributions of this thesis to the study of rewriting schemes for rank modulation include the following: we

•propose a new method of rewriting in rank modulation, beyond the previously proposed method of “push-to-the-top”;

•study the limits of rewriting with the newly proposed method, and derive a tight upper bound of 1 bit per cell;

•extend the rank-modulation scheme to support rankings with repetitions, in order to improve the storage density;

•derive a tight upper bound of 2 bits per cell for rewriting in rank modulation with repetitions;

•construct an efficient rewriting scheme that asymptotically approaches the upper bound of 2 bit per cell.

The next part of this thesis studies rewriting schemes for a conventional absolute-levels modulation. The considered model is called “write-once memory” (WOM). We focus on WOM schemes that achieve the capacity of the model. In recent years several capacity-achieving WOM schemes were proposed, based on polar codes and randomness extractors. The contributions of this thesis to the study of WOM scheme include the following: we

•propose a new capacity-achievingWOM scheme based on sparse-graph codes, and show its attractive properties for practical implementation;

•improve the design of polarWOMschemes to remove the reliance on shared randomness and include an error-correction capability.

The last part of the thesis studies the local rank-modulation (LRM) scheme, in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The LRM scheme is used to simulate a single conventional multi-level flash cell. The simulated cell is realized by a Gray code traversing all the relative-value states where, physically, the transition between two adjacent states in the Gray code is achieved by using a single “push-to-the-top” operation. The main results of the last part of the thesis are two constructions of Gray codes with asymptotically-optimal rate.