Digested sludge: delineation and modeling for ocean disposal

Experimental work was performed to delineate the system of digested sludge particles and associated trace metals and also to measure the interactions of sludge with seawater. Particle-size and particle number distributions were measured with a Coulter Counter. Number counts in excess of 10¹² particles per liter were found in both the City of Los Angeles Hyperion mesophilic digested sludge and the Los Angeles County Sanitation Districts (LACSD) digested primary sludge. More than 90 percent of the particles had diameters less than 10 microns.

Total and dissolved trace metals (Ag, Cd, Cr, Cu, Fe, Mn, Ni, Pb, and Zn) were measured in LACSD sludge. Manganese was the only metal whose dissolved fraction exceeded one percent of the total metal. Sedimentation experiments for several dilutions of LACSD sludge in seawater showed that the sedimentation velocities of the sludge particles decreased as the dilution factor increased. A tenfold increase in dilution shifted the sedimentation velocity distribution by an order of magnitude. Chromium, Cu, Fe, Ni, Pb, and Zn were also followed during sedimentation. To a first approximation these metals behaved like the particles.

Solids and selected trace metals (Cr, Cu, Fe, Ni, Pb, and Zn) were monitored in oxic mixtures of both Hyperion and LACSD sludges for periods of 10 to 28 days. Less than 10 percent of the filterable solids dissolved or were oxidized. Only Ni was mobilized away from the particles. The majority of the mobilization was complete in less than one day.

The experimental data of this work were combined with oceanographic, biological, and geochemical information to propose and model the discharge of digested sludge to the San Pedro and Santa Monica Basins. A hydraulic computer simulation for a round buoyant jet in a density stratified medium showed that discharges of sludge effluent mixture at depths of 730 m would rise no more than 120 m. Initial jet mixing provided dilution estimates of 450 to 2600. Sedimentation analyses indicated that the solids would reach the sediments within 10 km of the point discharge.

Mass balances on the oxidizable chemical constituents in sludge indicated that the nearly anoxic waters of the basins would become wholly anoxic as a result of proposed discharges. From chemical-equilibrium computer modeling of the sludge digester and dilutions of sludge in anoxic seawater, it was predicted that the chemistry of all trace metals except Cr and Mn will be controlled by the precipitation of metal sulfide solids. This metal speciation held for dilutions up to 3000.

The net environmental impacts of this scheme should be salutary. The trace metals in the sludge should be immobilized in the anaerobic bottom sediments of the basins. Apparently no lifeforms higher than bacteria are there to be disrupted. The proposed deep-water discharges would remove the need for potentially expensive and energy-intensive land disposal alternatives and would end the discharge to the highly productive water near the ocean surface.

Conduction-electron localized-moment interaction in palladium-silicon base amorphous alloys containing transition metals

The electrical and magnetic properties of amorphous alloys obtained by rapid quenching from the liquid state have been studied. The composition of these alloys corresponds to the general formula M_xPd_80-xSi₂₀, in which M stands for a metal of the first transition series between chromium and nickel and x is its atomic concentration. The concentration ranges within which an amorphous structure could be obtained were: from 0 to 7 for Cr, Mn and Fe, from 0 to 11 for Co and from 0 to 15 for Ni. A well-defined minimum in the resistivity vs temperature curve was observed for all alloys except those containing nickel. The alloys for which a resistivity minimum was observed had a negative magnetoresistivity approximately proportional to the square of the magnetization and their susceptibility obeyed the Curie-Weiss law in a wide temperature range. For concentrated Fe and Co alloys the resistivity minimum was found to coexist with ferromagnetism. These observations lead to the conclusion that the present results are due to a s-d exchange interaction. The unusually high resistivity minimum temperature observed in the Cr alloys is interpreted as a result of a high Kondo temperature and a large s-d exchange integral. A low Fermi energy of the amorphous alloys (3.5 eV) is also responsible for the anomalies due to the s-d exchange interaction.

Silicide formation and the interaction of metals with polycrystalline Si

The main factors affecting solid-phase Si-metal interactions are reported in this work. The influence of the orientation of the Si substrates and the presence of impurities in metal films and at the Si-metal interface on the formation of nickel and chromium silicides have been demonstrated. We have observed that the formation and kinetic rate of growth of nickel silicides is strongly dependent on the orientation and crystallinity of the Si substrates; a fact which, up to date, has never been seriously investigated in silicide formation. Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of CrSi₂. The potentiality and use of silicides as a diffusion barrier in metallization on silicon devices were also investigated.

Two phases, Ni₂Si and NiSi, form simultaneously in two distinct sublayers in the reaction of Ni with amorphous Si, while only the former phase was observed on other substrates. On (111) oriented Si substrates the growth rate is about 2 to 3 times less than that on <100> or polycrystalline Si. Transmission electron micrographs establish-·that silicide layers grown on different substrates have different microcrystalline structures. The concept of grain-boundary diffusion is speculated to be an important factor in silicide formation.

The composition and kinetic rate of CrSi₂ formation are not influenced by the underlying Si substrate. While the orientation of the Si substrate does not affect the formation of CrSi₂ , the purity of the Cr film and the state of Si-Cr interface become the predominant factors in the reaction process. With an interposed layer of Pd₂Si between the Cr film and the Si substrate, CrSi₂ starts to form at a much lower temperature (400°C) relative to the Si-Cr system. However, the growth rate of CrSi₂ is observed to be independent of the thickness of the Pd2Si layer. For both Si-Cr and Si-Pd₂Si-Cr samples, the growth rate is linear with time with an activation energy of 1.7 ± 0.1 ev.

A tracer technique using radioactive ³¹Si (T_1/2 = 2.26 h) was used to study the formation of CrSi₂ on Pd₂Si. It is established from this experiment that the growth of CrSi₂ takes place partly by transport of Si directly from the Si substrate and partly by breaking Pd₂Si bonds, making free Si atoms available for the growth process.

The role of CrSi₂ in Pd-Al metallization on Si was studied. It is established that a thin CrSi₂ layer can be used as a diffusion barrier to prevent Al from interacting with Pd₂Si in the Pd-Al metallization on Si.

As a generalization of what has been observed for polycrystalline-Si-Al interaction, the reactions between polycrystalline Si (poly Si) and other metals were studied. The metals investigated include Ni, Cr, Pd, Ag and Au. For Ni, Cr and Pd, annealing results in silicide formation, at temperatures similar to those observed on single crystal Si substrates. For Al, Ag and Au, which form simple eutectics with Si annealing results in erosion of the poly Si layer and growth of Si crystallites in the metal films.

Backscattering spectrometry with 2.0 and 2.3 MeV ⁴He ions was the main analytical tool used in all our investigations. Other experimental techniques include the Read camera glancing angle x-ray diffraction, scanning electron, optical and transmission electron microscopy. Details of these analytical techniques are given in Chapter II.

Trimethylsilyl anions: stereospecific deoxygenation of epoxides and trimethylsilyldehalogenation of aryl halides

I. Trimethylsilylpotassium reacts with epoxides to give olefins with inversion of stereochemistry. The reaction appears to proceed via the potassium β-silyl alkoxide (2) formed from the S_N2 attack of the silyl anion on the epoxide. Subsequent stereospecific synelimination of 2 affords the olefin of inverted stereo-chemistry. The reaction is convenient and preparatively useful.

The byproduct of the reaction, potassium trimethylsilanolate (17), effectively cleaves hexamethyldisilane to yield trimethylsilylpotassium. Since the latter reagent is generated and reacted in situ with epoxides, the overall reaction can be carried out with less than one equivalent of potassium methoxide.

II. The reaction of aryl halides with trimethylsilyl anions in HMPT provides good yields of aryltrimethylsilanes, useful synthetic intermediates. The choice of metal cation is unimportant. Chlorides and bromides give high yields of silylated products, while iodides give lower yields, with correspondingly increased amounts of reduced products. Arylammonium and arylphosphonium salts also undergo the reaction.

We have permissive evidence for the reaction proceeding via both aryl radical and aryl anion intermediates.

III. Trimethylsilyl and trimethylstannyl methoxycarbene complexes of chromium and tungsten have been prepared. One of these, (CO)_5WC(OMe)SnMe_3, reacts with norbornene at 80° to afford a new olefin polymer. Efforts to effect the alpha-elimination of the nonmetallic carbene ligands have not yet been successful. Reactions of these carbene complexes with acetone have been investigated.