Capturing protein dynamics with time-resolved luminescence spectroscopy

The presented doctoral research utilizes time-resolved spectroscopy to characterize protein dynamics and folding mechanisms. We resolve millisecond-timescale folding by coupling time-resolved fluorescence energy transfer (trFRET) to a continuous flow microfluidic mixer to obtain intramolecular distance distributions throughout the folding process. We have elucidated the folding mechanisms of two cytochromes---one that exhibits two-state folding (cytochrome cb₅₆₂) and one that has both a kinetic refolding intermediate ensemble and a distinct equilibrium unfolding intermediate (cytochrome c₅₅₂). Our data reveal that the distinct structural features of cytochrome c₅₅₂ contribute to its thermostability.

We have also investigated intrachain contact dynamics in unfolded cytochrome cb₅₆₂ by monitoring electron transfer, which occurs as the heme collides with a ruthenium photosensitizer, covalently bound to residues along the polypeptide. Intrachain diffusion for chemically denatured proteins proceeds on the microsecond timescale with an upper limit of 0.1 microseconds. The power-law dependence (slope = -1.5) of the rate constants on the number of peptide bonds between the heme and Ru complex indicate that cytochrome cb₅₆₂ is minimally frustrated.

In addition, we have explored the pathway dependence of electron tunneling rates between metal sites in proteins. Our research group has converted cytochrome b₅₆₂ to a c-type cytochrome with the porphyrin covalently bound to cysteine sidechains. We have investigated the effects of the changes to the protein structure (i.e., increased rigidity and potential new equatorial tunneling pathways) on the electron transfer rates, measured by transient absorption, in a series of ruthenium photosensitizer-modified proteins.

Low-noise THz Niobium SIS Mixers

This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits.

To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency.

A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/k_b to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.

Investigation of bulk indium antimonide as heterodyne detector for the submillimeter wavelength region

Bulk n-lnSb is investigated at a heterodyne detector for the submillimeter wavelength region. Two modes or operation are investigated: (1) the Rollin or hot electron bolometer mode (zero magnetic field), and (2) the Putley mode (quantizing magnetic field). The highlight of the thesis work is the pioneering demonstration or the Putley mode mixer at several frequencies. For example, a double-sideband system noise temperature of about 510K was obtained using a 812 GHz methanol laser for the local oscillator. This performance is at least a factor or 10 more sensitive than any other performance reported to date at the same frequency. In addition, the Putley mode mixer achieved system noise temperatures of 250K at 492 GHz and 350K at 625 GHz. The 492 GHz performance is about 50% better and the 625 GHz is about 100% better than previous best performances established by the Rollin-mode mixer. To achieve these results, it was necessary to design a totally new ultra-low noise, room-temperature preamp to handle the higher source impedance imposed by the Putley mode operation. This preamp has considerably less input capacitance than comparably noisy, ambient designs.

In addition to advancing receiver technology, this thesis also presents several novel results regarding the physics of n-lnSb at low temperatures. A Fourier transform spectrometer was constructed and used to measure the submillimeter wave absorption coefficient of relatively pure material at liquid helium temperatures and in zero magnetic field. Below 4.2K, the absorption coefficient was found to decrease with frequency much faster than predicted by Drudian theory. Much better agreement with experiment was obtained using a quantum theory based on inverse-Bremmstrahlung in a solid. Also the noise of the Rollin-mode detector at 4.2K was accurately measured and compared with theory. The power spectrum is found to be well fit by a recent theory of non- equilibrium noise due to Mather. Surprisingly, when biased for optimum detector performance, high purity lnSb cooled to liquid helium temperatures generates less noise than that predicted by simple non-equilibrium Johnson noise theory alone. This explains in part the excellent performance of the Rollin-mode detector in the millimeter wavelength region.

Again using the Fourier transform spectrometer, spectra are obtained of the responsivity and direct detection NEP as a function of magnetic field in the range 20-110 cm^-1. The results show a discernable peak in the detector response at the conduction electron cyclotron resonance frequency tor magnetic fields as low as 3 KG at bath temperatures of 2.0K. The spectra also display the well-known peak due to the cyclotron resonance of electrons bound to impurity states. The magnitude of responsivity at both peaks is roughly constant with magnet1c field and is comparable to the low frequency Rollin-mode response. The NEP at the peaks is found to be much better than previous values at the same frequency and comparable to the best long wavelength results previously reported. For example, a value NEP=4.5x10^-13/Hz^1/2 is measured at 4.2K, 6 KG and 40 cm^-1. Study of the responsivity under conditions of impact ionization showed a dramatic disappearance of the impurity electron resonance while the conduction electron resonance remained constant. This observation offers the first concrete evidence that the mobility of an electron in the N=0 and N=1 Landau levels is different. Finally, these direct detection experiments indicate that the excellent heterodyne performance achieved at 812 GHz should be attainable up to frequencies of at least 1200 GHz.

Self-healing Techniques for RF and mm-Wave Transmitters and Receivers

With continuing advances in CMOS technology, feature sizes of modern Silicon chip-sets have gone down drastically over the past decade. In addition to desktops and laptop processors, a vast majority of these chips are also being deployed in mobile communication devices like smart-phones and tablets, where multiple radio-frequency integrated circuits (RFICs) must be integrated into one device to cater to a wide variety of applications such as Wi-Fi, Bluetooth, NFC, wireless charging, etc. While a small feature size enables higher integration levels leading to billions of transistors co-existing on a single chip, it also makes these Silicon ICs more susceptible to variations. A part of these variations can be attributed to the manufacturing process itself, particularly due to the stringent dimensional tolerances associated with the lithographic steps in modern processes. Additionally, RF or millimeter-wave communication chip-sets are subject to another type of variation caused by dynamic changes in the operating environment. Another bottleneck in the development of high performance RF/mm-wave Silicon ICs is the lack of accurate analog/high-frequency models in nanometer CMOS processes. This can be primarily attributed to the fact that most cutting edge processes are geared towards digital system implementation and as such there is little model-to-hardware correlation at RF frequencies.

All these issues have significantly degraded yield of high performance mm-wave and RF CMOS systems which often require multiple trial-and-error based Silicon validations, thereby incurring additional production costs. This dissertation proposes a low overhead technique which attempts to counter the detrimental effects of these variations, thereby improving both performance and yield of chips post fabrication in a systematic way. The key idea behind this approach is to dynamically sense the performance of the system, identify when a problem has occurred, and then actuate it back to its desired performance level through an intelligent on-chip optimization algorithm. We term this technique as self-healing drawing inspiration from nature's own way of healing the body against adverse environmental effects. To effectively demonstrate the efficacy of self-healing in CMOS systems, several representative examples are designed, fabricated, and measured against a variety of operating conditions.

We demonstrate a high-power mm-wave segmented power mixer array based transmitter architecture that is capable of generating high-speed and non-constant envelope modulations at higher efficiencies compared to existing conventional designs. We then incorporate several sensors and actuators into the design and demonstrate closed-loop healing against a wide variety of non-ideal operating conditions. We also demonstrate fully-integrated self-healing in the context of another mm-wave power amplifier, where measurements were performed across several chips, showing significant improvements in performance as well as reduced variability in the presence of process variations and load impedance mismatch, as well as catastrophic transistor failure. Finally, on the receiver side, a closed-loop self-healing phase synthesis scheme is demonstrated in conjunction with a wide-band voltage controlled oscillator to generate phase shifter local oscillator (LO) signals for a phased array receiver. The system is shown to heal against non-idealities in the LO signal generation and distribution, significantly reducing phase errors across a wide range of frequencies.