Chain-forming zintl antimonides as novel thermoelectric materials

Zintl phases, a subset of intermetallic compounds characterized by covalently-bonded "sub-structures," surrounded by highly electropositive cations, exhibit precisely the characteristics desired for thermoelectric applications. The requirement that Zintl compounds satisfy the valence of anions through the formation of covalent substructures leads to many unique, complex crystal structures. Such complexity often leads to exceptionally low lattice thermal conductivity due to the containment of heat in low velocity optical modes in the phonon dispersion. To date, excellent thermoelectric properties have been demonstrated in several Zintl compounds. However, compared with the large number of known Zintl phases, very few have been investigated as thermoelectric materials.

From this pool of uninvestigated compounds, we selected a class of Zintl antimonides that share a common structural motif: anionic moieties resembling infinite chains of linked MSb₄ tetrahedra, where $M$ is a triel element. The compounds discussed in this thesis (A₅M₂Sb₆ and A₃MSb₃, where A = Ca or Sr and M = Al, Ga and In) crystallize as four distinct, but closely related "chain-forming" structure types. This thesis describes the thermoelectric characterization and optimization of these phases, and explores the influence of their chemistry and structure on the thermal and electronic transport properties. Due to their large unit cells, each compound exhibits exceptionally low lattice thermal conductivity (0.4 - 0.6 W/mK at 1000 K), approaching the predicted glassy minimum at high temperatures. A combination of Density Functional calculations and classical transport models were used to explain the experimentally observed electronic transport properties of each compound. Consistent with the Zintl electron counting formalism, A₅M₂Sb₆ and A₃MSb₃ phases were found to have filled valence bands and exhibit intrinsic electronic properties. Doping with divalent transition metals (Zn²⁺ and Mn²⁺) on the M³⁺ site, or Na¹⁺ on the A³⁺ site allowed for rational control of the carrier concentration and a transition towards degenerate semiconducting behavior. In optimally-doped samples, promising peak zT values between 0.4 and 0.9 were obtained, highlighting the value of continued investigations of complex Zintl phases.

Minimum drag profiles in infinite cavity flows

The problem considered is that of minimizing the drag of a symmetric plate in infinite cavity flow under the constraints of fixed arclength and fixed chord. The flow is assumed to be steady, irrotational, and incompressible. The effects of gravity and viscosity are ignored.

Using complex variables, expressions for the drag, arclength, and chord, are derived in terms of two hodograph variables, Γ (the logarithm of the speed) and β (the flow angle), and two real parameters, a magnification factor and a parameter which determines how much of the plate is a free-streamline.

Two methods are employed for optimization:

(1) The parameter method. Γ and β are expanded in finite orthogonal series of N terms. Optimization is performed with respect to the N coefficients in these series and the magnification and free-streamline parameters. This method is carried out for the case N = 1 and minimum drag profiles and drag coefficients are found for all values of the ratio of arclength to chord.

(2) The variational method. A variational calculus method for minimizing integral functionals of a function and its finite Hilbert transform is introduced, This method is applied to functionals of quadratic form and a necessary condition for the existence of a minimum solution is derived. The variational method is applied to the minimum drag problem and a nonlinear integral equation is derived but not solved.