Trace metals in fresh water plankton

The uptake of Cu, Zn, and Cd by fresh water plankton was studied by analyzing samples of water and plankton from six lakes in southern California. Co, Pb, Mn, Fe, Na, K, Mg, Ca, Sr, Ba, and Al were also determined in the plankton samples. Special precautions were taken during sampling and analysis to avoid metal contamination.

The relation between aqueous metal concentrations and the concentrations of metals in plankton was studied by plotting aqueous and plankton metal concentrations vs time and comparing the plots. No plankton metal plot showed the same changes as its corresponding aqueous metal plot, though long-term trends were similar. Thus, passive sorption did not completely explain plankton metal uptake.

The fractions of Cu, Zn, and Cd in lake water which were associated with plankton were calculated and these fractions were less than 1% in every case.

To see whether or not plankton metal uptake could deplete aqueous metal concentrations by measurable amounts (e.g. 20%) in short periods (e.g. less than six days), three integrated rate equations were used as models of plankton metal sorption. Parameters for the equations were taken from actual field measurements. Measurable reductions in concentration within short times were predicted by all three equations when the concentration factor was greater than 10^5. All Cu concentration factors were less than 10^5.

The role of plankton was regulating metal concentrations considered in the context of a model of trace metal chemistry in lakes. The model assumes that all particles can be represented by a single solid phase and that the solid phase controls aqueous metal concentrations. A term for the rate of in situ production of particulate matter is included and primary productivity was used for this parameter. In San Vicente Reservoir, the test case, the rate of in situ production of particulate matter was of the same order of magnitude as the rate of introduction of particulate matter by the influent stream.

Study of the origins of toughness in amorphous metals

Amorphous metals that form fully glassy parts over a few millimeters in thickness are still relatively new materials. Their glassy structure gives them particularly high strengths, high yield strains, high hardness values, high resilience, and low damping losses, but this can also result in an extremely low tolerance to the presence of flaws in the material. Since this glassy structure lacks the ordered crystal structure, it also lacks the crystalline defect (dislocations) that provides the micromechanism of toughening and flaw insensitivity in conventional metals. Without a sufficient and reliable toughness that results in a large tolerance of damage in the material, metallic glasses will struggle to be adopted commercially. Here, we identify the origin of toughness in metallic glass as the competition between the intrinsic toughening mechanism of shear banding ahead of a crack and crack propagation by the cavitation of the liquid inside the shear bands. We present a detailed study over the first three chapters mainly focusing on the process of shear banding; its crucial role in giving rise to one of the most damage-tolerant materials known, its extreme sensitivity to the configurational state of a glass with moderate toughness, and how the configurational state can be changed with the addition of minor elements. The last chapter is a novel investigation into the cavitation barrier in glass-forming liquids, the competing process to shear banding. The combination of our results represents an increased understanding of the major influences on the fracture toughness of metallic glasses and thus provides a path for the improvement and development of tougher metallic glasses.

Conduction-electron localized-moment interaction in palladium-silicon base amorphous alloys containing transition metals

The electrical and magnetic properties of amorphous alloys obtained by rapid quenching from the liquid state have been studied. The composition of these alloys corresponds to the general formula M_xPd_80-xSi₂₀, in which M stands for a metal of the first transition series between chromium and nickel and x is its atomic concentration. The concentration ranges within which an amorphous structure could be obtained were: from 0 to 7 for Cr, Mn and Fe, from 0 to 11 for Co and from 0 to 15 for Ni. A well-defined minimum in the resistivity vs temperature curve was observed for all alloys except those containing nickel. The alloys for which a resistivity minimum was observed had a negative magnetoresistivity approximately proportional to the square of the magnetization and their susceptibility obeyed the Curie-Weiss law in a wide temperature range. For concentrated Fe and Co alloys the resistivity minimum was found to coexist with ferromagnetism. These observations lead to the conclusion that the present results are due to a s-d exchange interaction. The unusually high resistivity minimum temperature observed in the Cr alloys is interpreted as a result of a high Kondo temperature and a large s-d exchange integral. A low Fermi energy of the amorphous alloys (3.5 eV) is also responsible for the anomalies due to the s-d exchange interaction.

Silicide formation and the interaction of metals with polycrystalline Si

The main factors affecting solid-phase Si-metal interactions are reported in this work. The influence of the orientation of the Si substrates and the presence of impurities in metal films and at the Si-metal interface on the formation of nickel and chromium silicides have been demonstrated. We have observed that the formation and kinetic rate of growth of nickel silicides is strongly dependent on the orientation and crystallinity of the Si substrates; a fact which, up to date, has never been seriously investigated in silicide formation. Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of CrSi₂. The potentiality and use of silicides as a diffusion barrier in metallization on silicon devices were also investigated.

Two phases, Ni₂Si and NiSi, form simultaneously in two distinct sublayers in the reaction of Ni with amorphous Si, while only the former phase was observed on other substrates. On (111) oriented Si substrates the growth rate is about 2 to 3 times less than that on <100> or polycrystalline Si. Transmission electron micrographs establish-·that silicide layers grown on different substrates have different microcrystalline structures. The concept of grain-boundary diffusion is speculated to be an important factor in silicide formation.

The composition and kinetic rate of CrSi₂ formation are not influenced by the underlying Si substrate. While the orientation of the Si substrate does not affect the formation of CrSi₂ , the purity of the Cr film and the state of Si-Cr interface become the predominant factors in the reaction process. With an interposed layer of Pd₂Si between the Cr film and the Si substrate, CrSi₂ starts to form at a much lower temperature (400°C) relative to the Si-Cr system. However, the growth rate of CrSi₂ is observed to be independent of the thickness of the Pd2Si layer. For both Si-Cr and Si-Pd₂Si-Cr samples, the growth rate is linear with time with an activation energy of 1.7 ± 0.1 ev.

A tracer technique using radioactive ³¹Si (T_1/2 = 2.26 h) was used to study the formation of CrSi₂ on Pd₂Si. It is established from this experiment that the growth of CrSi₂ takes place partly by transport of Si directly from the Si substrate and partly by breaking Pd₂Si bonds, making free Si atoms available for the growth process.

The role of CrSi₂ in Pd-Al metallization on Si was studied. It is established that a thin CrSi₂ layer can be used as a diffusion barrier to prevent Al from interacting with Pd₂Si in the Pd-Al metallization on Si.

As a generalization of what has been observed for polycrystalline-Si-Al interaction, the reactions between polycrystalline Si (poly Si) and other metals were studied. The metals investigated include Ni, Cr, Pd, Ag and Au. For Ni, Cr and Pd, annealing results in silicide formation, at temperatures similar to those observed on single crystal Si substrates. For Al, Ag and Au, which form simple eutectics with Si annealing results in erosion of the poly Si layer and growth of Si crystallites in the metal films.

Backscattering spectrometry with 2.0 and 2.3 MeV ⁴He ions was the main analytical tool used in all our investigations. Other experimental techniques include the Read camera glancing angle x-ray diffraction, scanning electron, optical and transmission electron microscopy. Details of these analytical techniques are given in Chapter II.

Did galaxies reionize the universe?

The epoch of reionization remains one of the last uncharted eras of cosmic history, yet this time is of crucial importance, encompassing the formation of both the first galaxies and the first metals in the universe. In this thesis, I present four related projects that both characterize the abundance and properties of these first galaxies and uses follow-up observations of these galaxies to achieve one of the first observations of the neutral fraction of the intergalactic medium during the heart of the reionization era.

First, we present the results of a spectroscopic survey using the Keck telescopes targeting 6.3 < z < 8.8 star-forming galaxies. We secured observations of 19 candidates, initially selected by applying the Lyman break technique to infrared imaging data from the Wide Field Camera 3 (WFC3) onboard the Hubble Space Telescope (HST). This survey builds upon earlier work from Stark et al. (2010, 2011), which showed that star-forming galaxies at 3 < z < 6, when the universe was highly ionized, displayed a significant increase in strong Lyman alpha emission with redshift. Our work uses the LRIS and NIRSPEC instruments to search for Lyman alpha emission in candidates at a greater redshift in the observed near-infrared, in order to discern if this evolution continues, or is quenched by an increase in the neutral fraction of the intergalactic medium. Our spectroscopic observations typically reach a 5-sigma limiting sensitivity of < 50 AA. Despite expecting to detect Lyman alpha at 5-sigma in 7-8 galaxies based on our Monte Carlo simulations, we only achieve secure detections in two of 19 sources. Combining these results with a similar sample of 7 galaxies from Fontana et al. (2010), we determine that these few detections would only occur in < 1% of simulations if the intrinsic distribution was the same as that at z ~ 6. We consider other explanations for this decline, but find the most convincing explanation to be an increase in the neutral fraction of the intergalactic medium. Using theoretical models, we infer a neutral fraction of X_HI ~ 0.44 at z = 7.

Second, we characterize the abundance of star-forming galaxies at z > 6.5 again using WFC3 onboard the HST. This project conducted a detailed search for candidates both in the Hubble Ultra Deep Field as well as a number of additional wider Hubble Space Telescope surveys to construct luminosity functions at both z ~ 7 and 8, reaching 0.65 and 0.25 mag fainter than any previous surveys, respectively. With this increased depth, we achieve some of the most robust constraints on the Schechter function faint end slopes at these redshifts, finding very steep values of alpha_{z~7} = -1.87 +/- 0.18 and alpha_{z~8} = -1.94 +/- 0.23. We discuss these results in the context of cosmic reionization, and show that given reasonable assumptions about the ionizing spectra and escape fraction of ionizing photons, only half the photons needed to maintain reionization are provided by currently observable galaxies at z ~ 7-8. We show that an extension of the luminosity function down to M_{UV} = -13.0, coupled with a low level of star-formation out to higher redshift, can fit all available constraints on the ionization history of the universe.

Third, we investigate the strength of nebular emission in 3 < z < 5 star-forming galaxies. We begin by using the Infrared Array Camera (IRAC) onboard the Spitzer Space Telescope to investigate the strength of H alpha emission in a sample of 3.8 < z < 5.0 spectroscopically confirmed galaxies. We then conduct near-infrared observations of star-forming galaxies at 3 < z < 3.8 to investigate the strength of the [OIII] 4959/5007 and H beta emission lines from the ground using MOSFIRE. In both cases, we uncover near-ubiquitous strong nebular emission, and find excellent agreement between the fluxes derived using the separate methods. For a subset of 9 objects in our MOSFIRE sample that have secure Spitzer IRAC detections, we compare the emission line flux derived from the excess in the K_s band photometry to that derived from direct spectroscopy and find 7 to agree within a factor of 1.6, with only one catastrophic outlier. Finally, for a different subset for which we also have DEIMOS rest-UV spectroscopy, we compare the relative velocities of Lyman alpha and the rest-optical nebular lines which should trace the cites of star-formation. We find a median velocity offset of only v_{Ly alpha} = 149 km/s, significantly less than the 400 km/s observed for star-forming galaxies with weaker Lyman alpha emission at z = 2-3 (Steidel et al. 2010), and show that this decrease can be explained by a decrease in the neutral hydrogen column density covering the galaxy. We discuss how this will imply a lower neutral fraction for a given observed extinction of Lyman alpha when its visibility is used to probe the ionization state of the intergalactic medium.

Finally, we utilize the recent CANDELS wide-field, infra-red photometry over the GOODS-N and S fields to re-analyze the use of Lyman alpha emission to evaluate the neutrality of the intergalactic medium. With this new data, we derive accurate ultraviolet spectral slopes for a sample of 468 3 < z < 6 star-forming galaxies, already observed in the rest-UV with the Keck spectroscopic survey (Stark et al. 2010). We use a Bayesian fitting method which accurately accounts for contamination and obscuration by skylines to derive a relationship between the UV-slope of a galaxy and its intrinsic Lyman alpha equivalent width probability distribution. We then apply this data to spectroscopic surveys during the reionization era, including our own, to accurately interpret the drop in observed Lyman alpha emission. From our most recent such MOSFIRE survey, we also present evidence for the most distant galaxy confirmed through emission line spectroscopy at z = 7.62, as well as a first detection of the CIII]1907/1909 doublet at z > 7.

We conclude the thesis by exploring future prospects and summarizing the results of Robertson et al. (2013). This work synthesizes many of the measurements in this thesis, along with external constraints, to create a model of reionization that fits nearly all available constraints.

Study of Solid-Phase Reactions of metals on GaAs

To make stable and reproducible contacts to GaAs, metals which react with GaAs in the solid-phase should be favored. In this study, contacts formed employing Pd/TiN/Pd/Ag, Pd:Mg/TiN/Pd:Mg/Ag and Ru/TiN/Ru/Ag are studied. The TiN layer is included to investigate its application as diffusion barrier in these metallizations. Contacts to n-GaAs are rectifying and the value of barrier height is modified upon annealing. Contacts to p-GaAs are initially rectifying but exhibit ohmic behaviour after annealing. The modifications in the electrical properties are attributed to the solid-phase reaction of metal and GaAs. The integrity of the contacts relies critically on the success of TiN to prevent the intermixing of Ag overlayer and the underlying layers. At elevated annealing temperatures (450°C), TiN fails to function as a diffusion barrier. As a result, the properties of the contact deteriorates.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals.

The first part of the thesis presents the discovery and development of Zn-IV nitride materials.The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1−xN2 series as a replacement for III-nitrides is discussed here.

The second half of the thesis shows ab−initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown.

Finally, this thesis gives an outlook on the potential of non-equilibrium phenomena in metals and semiconductors for future light-based technologies.

Late Transition Metals Supported by Aryl Ethers and Phenoxides Bearing Pendant Phosphines: Mechanistic Insights Relevant to Ether C-O Bond Cleavage

Terphenyl diphosphines bearing pendant ethers were prepared to provide mechanistic insight into the mechanism of activation of aryl C–O bonds with Group 9 and Group 10 transition metals. Chapters 2 and 3 of this dissertation describe the reactivity of compounds supported by the model phosphine and extension of this chemistry to heterogenous C–O bond activation.

Chapter 2 describes the synthesis and reactivity of aryl-methyl and aryl-aryl model systems. The metallation of these compounds with Ni, Pd, Pt, Co, Rh, and Ir is described. Intramolecular bond activation pathways are described. In the case of the aryl-methyl ether, aryl C–O bond activation was observed only for Ni, Rh, and Ir.

Chapter 3 outlines the reactivity of heterogenous Rh and Ir catalysts for aryl ether C–O bond cleavage. Using Rh/C and an organometallic Ir precursor, aryl ethers were treated with H2 and heat to afford products of hydrogenolysis and hydrogenation. Conditions were modified to optimize the yield of hydrogenolysis product. Hydrogenation could not be fully suppressed in these systems.

Appendix A describes initial investigations of bisphenoxyiminoquinoline dichromium compounds for selective C2H4 oligomerization to afford α-olefins. The synthesis of monometallic and bimetallic Cr complexes is described. These compounds are compared to literature examples and found to be less active and non-selective for production of α-olefins.

Appendix B describes the coordination chemistry of terphenyl diphosphines, terphenyl bisphosphinophenols, and biphenyl phosphinophenols proligands with molybdenum, cobalt, and nickel. Since their synthesis, terphenyl diphosphine molybdenum compounds have been reported to be good catalysts for the dehydrogenation of ammonia borane. Biphenyl phosphinophenols are demonstrated provide both phosphine and arene donors to transition metals while maintaining a sterically accessible coordination sphere. Such ligands may be promising in the context of the activation of other small molecules.

Appendix C contains relevant NMR spectra for the compounds presented in the preceding sections.

Classical and Quantum Effects in Plasmonic Metals

The field of plasmonics exploits the unique optical properties of metallic nanostructures to concentrate and manipulate light at subwavelength length scales. Metallic nanostructures get their unique properties from their ability to support surface plasmons– coherent wave-like oscillations of the free electrons at the interface between a conductive and dielectric medium. Recent advancements in the ability to fabricate metallic nanostructures with subwavelength length scales have created new possibilities in technology and research in a broad range of applications.

In the first part of this thesis, we present two investigations of the relationship between the charge state and optical state of plasmonic metal nanoparticles. Using experimental bias-dependent extinction measurements, we derive a potential- dependent dielectric function for Au nanoparticles that accounts for changes in the physical properties due to an applied bias that contribute to the optical extinction. We also present theory and experiment for the reverse effect– the manipulation of the carrier density of Au nanoparticles via controlled optical excitation. This plasmoelectric effect takes advantage of the strong resonant properties of plasmonic materials and the relationship between charge state and optical properties to eluci- date a new avenue for conversion of optical power to electrical potential.

The second topic of this thesis is the non-radiative decay of plasmons to a hot-carrier distribution, and the distribution’s subsequent relaxation. We present first-principles calculations that capture all of the significant microscopic mechanisms underlying surface plasmon decay and predict the initial excited carrier distributions so generated. We also preform ab initio calculations of the electron-temperature dependent heat capacities and electron-phonon coupling coefficients of plasmonic metals. We extend these first-principle methods to calculate the electron-temperature dependent dielectric response of hot electrons in plasmonic metals, including direct interband and phonon-assisted intraband transitions. Finally, we combine these first-principles calculations of carrier dynamics and optical response to produce a complete theoretical description of ultrafast pump-probe measurements, free of any fitting parameters that are typical in previous analyses.