3 resultados para glass ceiling barriers

em CaltechTHESIS


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This thesis presents an experimental investigation of the axisymmetric heat transfer from a small scale fire and resulting buoyant plume to a horizontal, unobstructed ceiling during the initial stages of development. A propane-air burner yielding a heat source strength between 1.0 kW and 1.6 kW was used to simulate the fire, and measurements proved that this heat source did satisfactorily represent a source of buoyancy only. The ceiling consisted of a 1/16" steel plate of 0.91 m. diameter, insulated on the upper side. The ceiling height was adjustable between 0.5 m and 0.91 m. Temperature measurements were carried out in the plume, ceiling jet, and on the ceiling.

Heat transfer data were obtained by using the transient method and applying corrections for the radial conduction along the ceiling and losses through the insulation material. The ceiling heat transfer coefficient was based on the adiabatic ceiling jet temperature (recovery temperature) reached after a long time. A parameter involving the source strength Q and ceiling height H was found to correlate measurements of this temperature and its radial variation. A similar parameter for estimating the ceiling heat transfer coefficient was confirmed by the experimental results.

This investigation therefore provides reasonable estimates for the heat transfer from a buoyant gas plume to a ceiling in the axisymmetric case, for the stagnation region where such heat transfer is a maximum and for the ceiling jet region (r/H ≤ 0.7). A comparison with data from experiments which involved larger heat sources indicates that the predicted scaling of temperatures and heat transfer rates for larger scale fires is adequate.

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I. HgSe is deposited on various semiconductors, forming a semimetal/semiconductor "Schottky barrier" structure. Polycrystalline, evaporated HgSe produces larger Schottky barrier heights on n-type semiconductors than does Au, the most electronegative of the elemental metals. The barrier heights are about 0.5 eV greater than those of Au on ionic semiconductors such as ZnS, and 0.1 to 0.2 eV greater for more covalently bonded semiconductors. A novel structure,which is both a lattice matched heterostructure and a Schottky barrier, is fabricated by epitaxial growth of HgSe on CdSe using hydrogen transport CVD. The Schottky barrier height for this structure is 0.73 ± 0.02 eV, as measured by the photoresponse method. This uncertainty is unusually small; and the magnitude is greater by about a quarter volt than is achievable with Au, in qualitative agreement with ionization potential arguments.

II . The Schottky barrier height of Au on chemically etched n-Ga1-x AlxAs was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at x ≈ 0.45 , then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the "common anion" rule as the AlAs mole fraction increases. This behavior is related to chemical reactivity of the Ga1-x AlxAs surface.

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The superconducting and magnetic properties of splat cooled amorphous alloys of composition (La100-xGdx)80Au20 (0 ≤ x ≤ 100) have been studied. The La80Au20 alloys are ideal type II super-conductors (critical temperature Tc = 3.5° K ). The concentration range (x less than 1) where superconductivity and spin-glass freezing n1ight coexist has been studied in detail. The spin-glass alloys (0 less than x less than 70) exhibit susceptibility maxima and thermomagnetic history effects. In the absence of complications due to crystal field and enhanced matrix effects, a phenomenological model is proposed in which the magnetic clusters are treated as single spin entities interacting via random forces using the molecular field approach. The fundamental parameters (such as the strength of the forces and the size of clusters) can be deduced from magnetization measurements. The remanent magnetization is shown to arise from an interplay of the RKKY and dipolar forces. Magnetoresistivity results are found to be consistent with the aforementioned picture. The nature of magnetic interactions in an amorphous matrix is also discussed. The moment per Gd atom (7µB) is found to be constant and close to that of the crystalline value throughout the concentration range investigated. Finally, a detail study is made of the critical phenomena and magnetic properties of the amorphous ferromagnet: Gd80Au20. The results are compared with recent theories on amorphous magnetism.