Probabilistic Imaging and Dynamic Modeling of Earthquake Source Processes

Investigation of large, destructive earthquakes is challenged by their infrequent occurrence and the remote nature of geophysical observations. This thesis sheds light on the source processes of large earthquakes from two perspectives: robust and quantitative observational constraints through Bayesian inference for earthquake source models, and physical insights on the interconnections of seismic and aseismic fault behavior from elastodynamic modeling of earthquake ruptures and aseismic processes.

To constrain the shallow deformation during megathrust events, we develop semi-analytical and numerical Bayesian approaches to explore the maximum resolution of the tsunami data, with a focus on incorporating the uncertainty in the forward modeling. These methodologies are then applied to invert for the coseismic seafloor displacement field in the 2011 Mw 9.0 Tohoku-Oki earthquake using near-field tsunami waveforms and for the coseismic fault slip models in the 2010 Mw 8.8 Maule earthquake with complementary tsunami and geodetic observations. From posterior estimates of model parameters and their uncertainties, we are able to quantitatively constrain the near-trench profiles of seafloor displacement and fault slip. Similar characteristic patterns emerge during both events, featuring the peak of uplift near the edge of the accretionary wedge with a decay toward the trench axis, with implications for fault failure and tsunamigenic mechanisms of megathrust earthquakes.

To understand the behavior of earthquakes at the base of the seismogenic zone on continental strike-slip faults, we simulate the interactions of dynamic earthquake rupture, aseismic slip, and heterogeneity in rate-and-state fault models coupled with shear heating. Our study explains the long-standing enigma of seismic quiescence on major fault segments known to have hosted large earthquakes by deeper penetration of large earthquakes below the seismogenic zone, where mature faults have well-localized creeping extensions. This conclusion is supported by the simulated relationship between seismicity and large earthquakes as well as by observations from recent large events. We also use the modeling to connect the geodetic observables of fault locking with the behavior of seismicity in numerical models, investigating how a combination of interseismic geodetic and seismological estimates could constrain the locked-creeping transition of faults and potentially their co- and post-seismic behavior.

Mesoscale Optoelectronic Design of Wire-Based Photovoltaic and Photoelectrochemical Devices

The overarching theme of this thesis is mesoscale optical and optoelectronic design of photovoltaic and photoelectrochemical devices. In a photovoltaic device, light absorption and charge carrier transport are coupled together on the mesoscale, and in a photoelectrochemical device, light absorption, charge carrier transport, catalysis, and solution species transport are all coupled together on the mesoscale. The work discussed herein demonstrates that simulation-based mesoscale optical and optoelectronic modeling can lead to detailed understanding of the operation and performance of these complex mesostructured devices, serve as a powerful tool for device optimization, and efficiently guide device design and experimental fabrication efforts. In-depth studies of two mesoscale wire-based device designs illustrate these principles—(i) an optoelectronic study of a tandem Si|WO3 microwire photoelectrochemical device, and (ii) an optical study of III-V nanowire arrays.

The study of the monolithic, tandem, Si|WO3 microwire photoelectrochemical device begins with development and validation of an optoelectronic model with experiment. This study capitalizes on synergy between experiment and simulation to demonstrate the model’s predictive power for extractable device voltage and light-limited current density. The developed model is then used to understand the limiting factors of the device and optimize its optoelectronic performance. The results of this work reveal that high fidelity modeling can facilitate unequivocal identification of limiting phenomena, such as parasitic absorption via excitation of a surface plasmon-polariton mode, and quick design optimization, achieving over a 300% enhancement in optoelectronic performance over a nominal design for this device architecture, which would be time-consuming and challenging to do via experiment.

The work on III-V nanowire arrays also starts as a collaboration of experiment and simulation aimed at gaining understanding of unprecedented, experimentally observed absorption enhancements in sparse arrays of vertically-oriented GaAs nanowires. To explain this resonant absorption in periodic arrays of high index semiconductor nanowires, a unified framework that combines a leaky waveguide theory perspective and that of photonic crystals supporting Bloch modes is developed in the context of silicon, using both analytic theory and electromagnetic simulations. This detailed theoretical understanding is then applied to a simulation-based optimization of light absorption in sparse arrays of GaAs nanowires. Near-unity absorption in sparse, 5% fill fraction arrays is demonstrated via tapering of nanowires and multiple wire radii in a single array. Finally, experimental efforts are presented towards fabrication of the optimized array geometries. A hybrid self-catalyzed and selective area MOCVD growth method is used to establish morphology control of GaP nanowire arrays. Similarly, morphology and pattern control of nanowires is demonstrated with ICP-RIE of InP. Optical characterization of the InP nanowire arrays gives proof of principle that tapering and multiple wire radii can lead to near-unity absorption in sparse arrays of InP nanowires.