Wave propagation in an inhomogeneous medium

This paper is in two parts. In the first part we give a qualitative study of wave propagation in an inhomogeneous medium principally by geometrical optics and ray theory. The inhomogeneity is represented by a sound-speed profile which is dependent upon one coordinate, namely the depth; and we discuss the general characteristics of wave propagation which result from a source placed on the sound channel axis. We show that our mathematical model of the sound- speed in the ocean actually predicts some of the behavior of the observed physical phenomena in the underwater sound channel. Using ray theoretic techniques we investigate the implications of our profile on the following characteristics of SOFAR propagation: (i) the sound energy traveling further away from the axis takes less time to travel from source to receiver than sound energy traveling closer to the axis, (ii) the focusing of sound energy in the sound channel at certain ranges, (iii) the overall ray picture in the sound channel.

In the second part a more penetrating quantitative study is done by means of analytical techniques on the governing equations. We study the transient problem for the Epstein profile by employing a double transform to formally derive an integral representation for the acoustic pressure amplitude, and from this representation we obtain several alternative representations. We study the case where both source and receiver are on the channel axis and greatly separated. In particular we verify some of the earlier results derived by ray theory and obtain asymptotic results for the acoustic pressure in the far-field.

Methods of multiparameter inversion of seismic data using the acoustic and elastic born approximations

This thesis presents two different forms of the Born approximations for acoustic and elastic wavefields and discusses their application to the inversion of seismic data. The Born approximation is valid for small amplitude heterogeneities superimposed over a slowly varying background. The first method is related to frequency-wavenumber migration methods. It is shown to properly recover two independent acoustic parameters within the bandpass of the source time function of the experiment for contrasts of about 5 percent from data generated using an exact theory for flat interfaces. The independent determination of two parameters is shown to depend on the angle coverage of the medium. For surface data, the impedance profile is well recovered.

The second method explored is mathematically similar to iterative tomographic methods recently introduced in the geophysical literature. Its basis is an integral relation between the scattered wavefield and the medium parameters obtained after applying a far-field approximation to the first-order Born approximation. The Davidon-Fletcher-Powell algorithm is used since it converges faster than the steepest descent method. It consists essentially of successive backprojections of the recorded wavefield, with angular and propagation weighing coefficients for density and bulk modulus. After each backprojection, the forward problem is computed and the residual evaluated. Each backprojection is similar to a before-stack Kirchhoff migration and is therefore readily applicable to seismic data. Several examples of reconstruction for simple point scatterer models are performed. Recovery of the amplitudes of the anomalies are improved with successive iterations. Iterations also improve the sharpness of the images.

The elastic Born approximation, with the addition of a far-field approximation is shown to correspond physically to a sum of WKBJ-asymptotic scattered rays. Four types of scattered rays enter in the sum, corresponding to P-P, P-S, S-P and S-S pairs of incident-scattered rays. Incident rays propagate in the background medium, interacting only once with the scatterers. Scattered rays propagate as if in the background medium, with no interaction with the scatterers. An example of P-wave impedance inversion is performed on a VSP data set consisting of three offsets recorded in two wells.

Accelerogram processing using reliability bounds and optimal correction methods

This study addresses the problem of obtaining reliable velocities and displacements from accelerograms, a concern which often arises in earthquake engineering. A closed-form acceleration expression with random parameters is developed to test any strong-motion accelerogram processing method. Integration of this analytical time history yields the exact velocities, displacements and Fourier spectra. Noise and truncation can also be added. A two-step testing procedure is proposed and the original Volume II routine is used as an illustration. The main sources of error are identified and discussed. Although these errors may be reduced, it is impossible to extract the true time histories from an analog or digital accelerogram because of the uncertain noise level and missing data. Based on these uncertainties, a probabilistic approach is proposed as a new accelerogram processing method. A most probable record is presented as well as a reliability interval which reflects the level of error-uncertainty introduced by the recording and digitization process. The data is processed in the frequency domain, under assumptions governing either the initial value or the temporal mean of the time histories. This new processing approach is tested on synthetic records. It induces little error and the digitization noise is adequately bounded. Filtering is intended to be kept to a minimum and two optimal error-reduction methods are proposed. The "noise filters" reduce the noise level at each harmonic of the spectrum as a function of the signal-to-noise ratio. However, the correction at low frequencies is not sufficient to significantly reduce the drifts in the integrated time histories. The "spectral substitution method" uses optimization techniques to fit spectral models of near-field, far-field or structural motions to the amplitude spectrum of the measured data. The extremes of the spectrum of the recorded data where noise and error prevail are then partly altered, but not removed, and statistical criteria provide the choice of the appropriate cutoff frequencies. This correction method has been applied to existing strong-motion far-field, near-field and structural data with promising results. Since this correction method maintains the whole frequency range of the record, it should prove to be very useful in studying the long-period dynamics of local geology and structures.

Experimental Investigation of Thrust Fault Rupture Mechanics

Thrust fault earthquakes are investigated in the laboratory by generating dynamic shear ruptures along pre-existing frictional faults in rectangular plates. A considerable body of evidence suggests that dip-slip earthquakes exhibit enhanced ground motions in the acute hanging wall wedge as an outcome of broken symmetry between hanging and foot wall plates with respect to the earth surface. To understand the physical behavior of thrust fault earthquakes, particularly ground motions near the earth surface, ruptures are nucleated in analog laboratory experiments and guided up-dip towards the simulated earth surface. The transient slip event and emitted radiation mimic a natural thrust earthquake. High-speed photography and laser velocimeters capture the rupture evolution, outputting a full-field view of photo-elastic fringe contours proportional to maximum shearing stresses as well as continuous ground motion velocity records at discrete points on the specimen. Earth surface-normal measurements validate selective enhancement of hanging wall ground motions for both sub-Rayleigh and super-shear rupture speeds. The earth surface breaks upon rupture tip arrival to the fault trace, generating prominent Rayleigh surface waves. A rupture wave is sensed in the hanging wall but is, however, absent from the foot wall plate: a direct consequence of proximity from fault to seismometer. Signatures in earth surface-normal records attenuate with distance from the fault trace. Super-shear earthquakes feature greater amplitudes of ground shaking profiles, as expected from the increased tectonic pressures required to induce super-shear transition. Paired stations measure fault parallel and fault normal ground motions at various depths, which yield slip and opening rates through direct subtraction of like components. Peak fault slip and opening rates associated with the rupture tip increase with proximity to the fault trace, a result of selective ground motion amplification in the hanging wall. Fault opening rates indicate that the hanging and foot walls detach near the earth surface, a phenomenon promoted by a decrease in magnitude of far-field tectonic loads. Subsequent shutting of the fault sends an opening pulse back down-dip. In case of a sub-Rayleigh earthquake, feedback from the reflected S wave re-ruptures the locked fault at super-shear speeds, providing another mechanism of super-shear transition.

New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

Some theorems in classical elastodynamic

This investigation is concerned with various fundamental aspects of the linearized dynamical theory for mechanically homogeneous and isotropic elastic solids. First, the uniqueness and reciprocal theorems of dynamic elasticity are extended to unbounded domains with the aid of a generalized energy identity and a lemma on the prolonged quiescence of the far field, which are established for this purpose. Next, the basic singular solutions of elastodynamics are studied and used to generate systematically Love's integral identity for the displacement field, as well as an associated identity for the field of stress. These results, in conjunction with suitably defined Green's functions, are applied to the construction of integral representations for the solution of the first and second boundary-initial value problem. Finally, a uniqueness theorem for dynamic concentrated-load problems is obtained.