Morphogenesis of the Arabidopsis Shoot Apical Meristem

Phyllotaxis patterns in plants, or the arrangement of leaves and flowers radially around the shoot, have fascinated both biologists and mathematicians for centuries. The current model of this process involves the lateral transport of the hormone auxin through the first layer of cells in the shoot apical meristem via the auxin efflux carrier protein PIN1. Locations around the meristem with high auxin concentration are sites of organ formation and differentiation. Many of the molecular players in this process are well known and characterized. Computer models composed of all these components are able to produce many of the observed phyllotaxis patterns. To understand which parts of this model have a large effect on the phenotype I automated parameter testing and tried many different parameter combinations. Results of this showed that cell size and meristem size should have the largest effect on phyllotaxis. This lead to three questions: (1) How is cell geometry regulated? (2) Does cell size affect auxin distribution? (3) Does meristem size affect phyllotaxis? To answer the first question I tracked cell divisions in live meristems and quantified the geometry of the cells and the division planes using advanced image processing techniques. The results show that cell shape is maintained by minimizing the length of the new wall and by minimizing the difference in area of the daughter cells. To answer the second question I observed auxin patterning in the meristem, shoot, leaves, and roots of Arabidopsis mutants with larger and smaller cell sizes. In the meristem and shoot, cell size plays an important role in determining the distribution of auxin. Observations of auxin in the root and leaves are less definitive. To answer the third question I measured meristem sizes and phyllotaxis patterns in mutants with altered meristem sizes. These results show that there is no correlation between meristem size and average divergence angle. But in an extreme case, making the meristem very small does lead to a switch on observed phyllotaxis in accordance with the model.

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.