Cu2O substrates and epitaxial Cu2O/ZnO thin film hetero-structures for solar energy conversion

Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

Conduction through thin titanium dioxide films

Conduction through TiO₂ films of thickness 100 to 450 Å have been investigated. The samples were prepared by either anodization of Ti evaporation of TiO₂, with Au or Al evaporated for contacts. The anodized samples exhibited considerable hysteresis due to electrical forming, however it was possible to avoid this problem with the evaporated samples from which complete sets of experimental results were obtained and used in the analysis. Electrical measurements included: the dependence of current and capacitance on dc voltage and temperature; the dependence of capacitance and conductance on frequency and temperature; and transient measurements of current and capacitance. A thick (3000 Å) evaporated TiO₂ film was used for measuring the dielectric constant (27.5) and the optical dispersion, the latter being similar to that for rutile. An electron transmission diffraction pattern of a evaporated film indicated an essentially amorphous structure with a short range order that could be related to rutile. Photoresponse measurements indicated the same band gap of about 3 ev for anodized and evaporated films and reduced rutile crystals and gave the barrier energies at the contacts.

The results are interpreted in a self consistent manner by considering the effect of a large impurity concentration in the films and a correspondingly large ionic space charge. The resulting potential profile in the oxide film leads to a thermally assisted tunneling process between the contacts and the interior of the oxide. A general relation is derived for the steady state current through structures of this kind. This in turn is expressed quantitatively for each of two possible limiting types of impurity distributions, where one type gives barriers of an exponential shape and leads to quantitative predictions in c lose agreement with the experimental results. For films somewhat greater than 100 Å, the theory is formulated essentially in terms of only the independently measured barrier energies and a characteristic parameter of the oxide that depends primarily on the maximum impurity concentration at the contacts. A single value of this parameter gives consistent agreement with the experimentally observed dependence of both current and capacitance on dc voltage and temperature, with the maximum impurity concentration found to be approximately the saturation concentration quoted for rutile. This explains the relative insensitivity of the electrical properties of the films on the exact conditions of formation.

Forced convection film boiling of subcooled water around a sphere

An experimental investigation was made of forced convection film boiling of subcooled water around a sphere at atmospheric pressure. The water was sufficiently cool that the vapor condensed before leaving the film with the result that no vapor bubbles left the film. The experimental runs were made using inductively heated spheres at temperatures above 740°C. and using inlet water temperatures between 15°C. and 27°C. The spheres used had diameters of 1/2 inch, 9/16 inch, and 3/8 inch and were supported by the liquid flow. Reynolds numbers between 60 and 700 were used.

Analysis of the collected non-condensables indicated that oxygen and nitrogen dissolved in the water accumulated within the vapor film and that hetrogeneous chemical reactions occurred at the sphere surface. An iron-steam reaction resulted in more than 20% by volume hydrogen in the film at wall temperatures above 900°C. At temperatures near 1100°C. more than 80% by volume of the film was composed of hydrogen. It was found that gold plating of the sphere could eliminate this reaction.

Material and energy balances were used to derive equations which may be used to predict the overall average heat transfer coefficients for subcooled film boiling around a sphere. These equations include the effect of dissolved gases in the water. Equations also were derived which may be used to predict the composition of the film for cases in which an equilibrium exists between the dissolved gases and the gases in the film.

The derived equations were compared to the experimental results. It was found that a correlation existed between the Nusselt number for heat transfer from the vapor-liquid interface into the liquid and the Reynolds number, liquid Prandtl number product. In addition, it was found that the percentage of dissolved oxygen removed during the film boiling could be predicted to within 10%.