Wave propagation in an inhomogeneous medium

This paper is in two parts. In the first part we give a qualitative study of wave propagation in an inhomogeneous medium principally by geometrical optics and ray theory. The inhomogeneity is represented by a sound-speed profile which is dependent upon one coordinate, namely the depth; and we discuss the general characteristics of wave propagation which result from a source placed on the sound channel axis. We show that our mathematical model of the sound- speed in the ocean actually predicts some of the behavior of the observed physical phenomena in the underwater sound channel. Using ray theoretic techniques we investigate the implications of our profile on the following characteristics of SOFAR propagation: (i) the sound energy traveling further away from the axis takes less time to travel from source to receiver than sound energy traveling closer to the axis, (ii) the focusing of sound energy in the sound channel at certain ranges, (iii) the overall ray picture in the sound channel.

In the second part a more penetrating quantitative study is done by means of analytical techniques on the governing equations. We study the transient problem for the Epstein profile by employing a double transform to formally derive an integral representation for the acoustic pressure amplitude, and from this representation we obtain several alternative representations. We study the case where both source and receiver are on the channel axis and greatly separated. In particular we verify some of the earlier results derived by ray theory and obtain asymptotic results for the acoustic pressure in the far-field.

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.