An investigation of wind tunnel wall effects at high Mach numbers

This paper presents the results of an investigation of wind tunnel wall interference in a two-dimensional wind tunnel at high Mach numbers. The results are presented in the form of curves of lift coefficient versus the ratio of model chord to tunnel height, as functions of Mach number and angle of attack. The investigation was carried out by the authors at the Guggenheim Aeronautical Laboratory of the California Institute of Technology during the school year 1944-45.

Tests were carried out on the NACA low drag airfoil section 65,1-012 at Mach numbers from .60 to .80, and angles of attack of from 1 to 3 degrees. Models were 1", 2", 4" and 6" chord, giving values of the chord to tunnel height ration of .1 to .6. Schlieren photographs were made of shock waves where they occurred.

Transonic wind tunnel for investigation of turbomachinery blades

The design of a two-stream wind tunnel was undertaken to allow the simulation and study of certain features of the flow field around the blades of high-speed axial-flow turbomachineries. The mixing of the two parallel streams with designed Mach numbers respectively equal to 1.4 and 0.7 will simulate the transonic Mach number distribution generally obtained along the tips of the first stage blades in large bypass-fan engines.

The GALCIT hypersonic compressor plant will be used as an air supply for the wind tunnel, and consequently the calculations contained in the first chapter are derived from the characteristics and the performance of this plant.

The transonic part of the nozzle is computed by using a method developed by K. O. Friedrichs. This method consists essentially of expanding the coordinates and the characteristics of the flow in power series. The development begins with prescribing, more or less arbitrarily, a Mach number distribution along the centerline of the nozzle. This method has been programmed for an IBM 360 computer to define the wall contour of the nozzle.

A further computation is carried out to correct the contour for boundary layer buildup. This boundary layer analysis included geometry, pressure gradient, and Mach number effects. The subsonic nozzle is calculated {including boundary layer buildup) by using the same computer programs. Finally, the mixing zone downstream of the splitter plate was investigated to prescribe the wall contour correction necessary to ensure a constant-pressure test section.

I. Fundamental limitations in microelectronics. II. Power Schottky diode design and comparison with the junction diode. III. Permittivity of strontium titanate

Part I

The physical phenomena which will ultimately limit the packing density of planar bipolar and MOS integrated circuits are examined. The maximum packing density is obtained by minimizing the supply voltage and the size of the devices. The minimum size of a bipolar transistor is determined by junction breakdown, punch-through and doping fluctuations. The minimum size of a MOS transistor is determined by gate oxide breakdown and drain-source punch-through. The packing density of fully active bipolar or static non-complementary MOS circuits becomes limited by power dissipation. The packing density of circuits which are not fully active such as read-only memories, becomes limited by the area occupied by the devices, and the frequency is limited by the circuit time constants and by metal migration. The packing density of fully active dynamic or complementary MOS circuits is limited by the area occupied by the devices, and the frequency is limited by power dissipation and metal migration. It is concluded that read-only memories will reach approximately the same performance and packing density with MOS and bipolar technologies, while fully active circuits will reach the highest levels of integration with dynamic MOS or complementary MOS technologies.

Part II

Because the Schottky diode is a one-carrier device, it has both advantages and disadvantages with respect to the junction diode which is a two-carrier device. The advantage is that there are practically no excess minority carriers which must be swept out before the diode blocks current in the reverse direction, i.e. a much faster recovery time. The disadvantage of the Schottky diode is that for a high voltage device it is not possible to use conductivity modulation as in the p i n diode; since charge carriers are of one sign, no charge cancellation can occur and current becomes space charge limited. The Schottky diode design is developed in Section 2 and the characteristics of an optimally designed silicon Schottky diode are summarized in Fig. 9. Design criteria and quantitative comparison of junction and Schottky diodes is given in Table 1 and Fig. 10. Although somewhat approximate, the treatment allows a systematic quantitative comparison of the devices for any given application.

Part III

We interpret measurements of permittivity of perovskite strontium titanate as a function of orientation, temperature, electric field and frequency performed by Dr. Richard Neville. The free energy of the crystal is calculated as a function of polarization. The Curie-Weiss law and the LST relation are verified. A generalized LST relation is used to calculate the permittivity of strontium titanate from zero to optic frequencies. Two active optic modes are important. The lower frequency mode is attributed mainly to motion of the strontium ions with respect to the rest of the lattice, while the higher frequency active mode is attributed to motion of the titanium ions with respect to the oxygen lattice. An anomalous resonance which multi-domain strontium titanate crystals exhibit below 65°K is described and a plausible mechanism which explains the phenomenon is presented.