The flow between rotating coaxial disks

Numerical approximations of nonunique solutions of the Navier-Stokes equations are obtained for steady viscous incompressible axisymmetric flow between two infinite rotating coaxial disks. For example, nineteen solutions have been found for the case when the disks are rotating with the same speed but in opposite direction. Bifurcation and perturbed bifurcation phenomena are observed. An efficient method is used to compute solution branches. The stability of solutions is analyzed. The rate of convergence of Newton's method at singular points is discussed. In particular, recovery of quadratic convergence at "normal limit points" and bifurcation points is indicated. Analytical construction of some of the computed solutions using singular perturbation techniques is discussed.

Dynamic states in rotating Rayleigh-Bénard convection systems

A new geometry-independent state - a traveling-wave wall state - is proposed as the mechanism whereby which the experimentally observed wall-localized states in rotating Rayleigh-Bénard convection systems preempt the bulk state at large rotation rates. Its properties are calculated for the illustrative case of free-slip top and bottom boundary conditions. At small rotation rates, this new wall state is found to disappear. A detailed study of the dynamics of the wall state and the bulk state in the transition region where this disappearance occurs is conducted using a Swift-Hohenberg model system. The Swift-Hohenberg model, with appropriate reflection-symmetry- breaking boundary conditions, is also shown to exhibit traveling-wave wall states, further demonstrating that traveling-wave wall states are a generic feature of nonequilibrium pattern-forming systems. A numerical code for the Swift-Hohenberg model in an annular geometry was written and used to investigate the dynamics of rotating Rayleigh-Bénard convection systems.

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.