Diffraction-limited imaging on the 200-inch telescope

We have used the technique of non-redundant masking at the Palomar 200-inch telescope and radio VLBI imaging software to make optical aperture synthesis maps of two binary stars, β Corona Borealis and σ Herculis. The dynamic range of the map of β CrB, a binary star with a separation of 230 milliarcseconds is 50:1. For σ Her, we find a separation of 70 milliarcseconds and the dynamic range of our image is 30:1. These demonstrate the potential of the non-redundant masking technique for diffraction-limited imaging of astronomical objects with high dynamic range.

We find that the optimal integration time for measuring the closure phase is longer than that for measuring the fringe amplitude. There is not a close relationship between amplitude errors and phase errors, as is found in radio interferometry. Amplitude self calibration is less effective at optical wavelengths than at radio wavelengths. Primary beam sensitivity correction made in radio aperture synthesis is not necessary in optical aperture synthesis.

The effects of atmospheric disturbances on optical aperture synthesis have been studied by Monte Carlo simulations based on the Kolmogorov theory of refractive-index fluctuations. For the non-redundant masking with τ_c-sized apertures, the simulated fringe amplitude gives an upper bound of the observed fringe amplitude. A smooth transition is seen from the non-redundant masking regime to the speckle regime with increasing aperture size. The fractional reduction of the fringe amplitude according to the bandwidth is nearly independent of the aperture size. The limiting magnitude of optical aperture synthesis with τ_c-sized apertures and that with apertures larger than τ_c are derived.

Monte Carlo simulations are also made to study the sensitivity and resolution of the bispectral analysis of speckle interferometry. We present the bispectral modulation transfer function and its signal-to-noise ratio at high light levels. The results confirm the validity of the heuristic interferometric view of image-forming process in the mid-spatial-frequency range. The signal-to- noise ratio of the bispectrum at arbitrary light levels is derived in the mid-spatial-frequency range.

The non-redundant masking technique is suitable for imaging bright objects with high resolution and high dynamic range, while the faintest limit will be better pursued by speckle imaging.

Temporal and spacial control of RNA stability in the early embryo of Drosophila melanogaster

Early embryogenesis in metazoa is controlled by maternally synthesized products. Among these products, the mature egg is loaded with transcripts representing approximately two thirds of the genome. A subset of this maternal RNA pool is degraded prior to the transition to zygotic control of development. This transfer of control of development from maternal to zygotic products is referred to as the midblastula transition (or MBT). It is believed that the degradation of maternal transcripts is required to terminate maternal control of development and to allow zygotic control of development to begin. Until now this process of maternal transcript degradation and the subsequent timing of the MBT has been poorly understood. I have demonstrated that in the early embryo there are two independent RNA degradation pathways, either of which is sufficient for transcript elimination. However, only the concerted action of both pathways leads to elimination of transcripts with the correct timing, at the MBT. The first pathway is maternally encoded, is triggered by egg activation, and is targeted to specific classes of mRNAs through cis-acting elements in the 3' untranslated region (UTR}. The second pathway is activated 2 hr after fertilization and functions together with the maternal pathway to ensure that transcripts are degraded by the MBT. In addition, some transcripts fail to degrade at select subcellular locations adding an element of spatial control to RNA degradation. The spatial control of RNA degradation is achieved by protecting, or masking, transcripts from the degradation machinery. The RNA degradation and protection events are regulated by distinct cis-elements in the 3' untranslated region (UTR). These results provide the first systematic dissection of this highly conserved process in development and demonstrate that RNA degradation is a novel mechanism used for both temporal and spatial control of development.

New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.