Crustal structure in Southern California from array data

Crustal structure in Southern California is investigated using travel times from over 200 stations and thousands of local earthquakes. The data are divided into two sets of first arrivals representing a two-layer crust. The Pg arrivals have paths that refract at depths near 10 km and the Pn arrivals refract along the Moho discontinuity. These data are used to find lateral and azimuthal refractor velocity variations and to determine refractor topography.

In Chapter 2 the Pn raypaths are modeled using linear inverse theory. This enables statistical verification that static delays, lateral slowness variations and anisotropy are all significant parameters. However, because of the inherent size limitations of inverse theory, the full array data set could not be processed and the possible resolution was limited. The tomographic backprojection algorithm developed for Chapters 3 and 4 avoids these size problems. This algorithm allows us to process the data sequentially and to iteratively refine the solution. The variance and resolution for tomography are determined empirically using synthetic structures.

The Pg results spectacularly image the San Andreas Fault, the Garlock Fault and the San Jacinto Fault. The Mojave has slower velocities near 6.0 km/s while the Peninsular Ranges have higher velocities of over 6.5 km/s. The San Jacinto block has velocities only slightly above the Mojave velocities. It may have overthrust Mojave rocks. Surprisingly, the Transverse Ranges are not apparent at Pg depths. The batholiths in these mountains are possibly only surficial.

Pn velocities are fast in the Mojave, slow in Southern California Peninsular Ranges and slow north of the Garlock Fault. Pn anisotropy of 2% with a NWW fast direction exists in Southern California. A region of thin crust (22 km) centers around the Colorado River where the crust bas undergone basin and range type extension. Station delays see the Ventura and Los Angeles Basins but not the Salton Trough, where high velocity rocks underlie the sediments. The Transverse Ranges have a root in their eastern half but not in their western half. The Southern Coast Ranges also have a thickened crust but the Peninsular Ranges have no major root.

Luminescence properties of electron-hole-droplets in pure and doped germanium

This work contains 4 topics dealing with the properties of the luminescence from Ge.

The temperature, pump-power and time dependences of the photoluminescence spectra of Li-, As-, Ga-, and Sb-doped Ge crystals were studied. For impurity concentrations less than about 10¹⁵cm^-3, emissions due to electron-hole droplets can clearly be identified. For impurity concentrations on the order of 10¹⁶cm^-3, the broad lines in the spectra, which have previously been attributed to the emission from the electron-hole-droplet, were found to possess pump-power and time dependent line shape. These properties show that these broad lines cannot be due to emission of electron-hole-droplets alone. We interpret these lines to be due to a combination of emissions from (1) electron-hole- droplets, (2) broadened multiexciton complexes, (3) broadened bound-exciton, and (4) plasma of electrons and holes. The properties of the electron-hole-droplet in As-doped Ge were shown to agree with theoretical predictions.

The time dependences of the luminescence intensities of the electron-hole-droplet in pure and doped Ge were investigated at 2 and 4.2°K. The decay of the electron-hole-droplet in pure Ge at 4.2°K was found to be pump-power dependent and too slow to be explained by the widely accepted model due to Pokrovskii and Hensel et al. Detailed study of the decay of the electron-hole-droplets in doped Ge were carried out for the first time, and we find no evidence of evaporation of excitons by electron-hole-droplets at 4.2°K. This doped Ge result is unexplained by the model of Pokrovskii and Hensel et al. It is shown that a model based on a cloud of electron-hole-droplets generated in the crystal and incorporating (1) exciton flow among electron-hole-droplets in the cloud and (2) exciton diffusion away from the cloud is capable of explaining the observed results.

It is shown that impurities, introduced during device fabrication, can lead to the previously reported differences of the spectra of laser-excited high-purity Ge and electrically excited Ge double injection devices. By properly choosing the device geometry so as to minimize this Li contamination, it is shown that the Li concentration in double injection devices may be reduced to less than about 10¹⁵cm^-3 and electrically excited luminescence spectra similar to the photoluminescence spectra of pure Ge may be produced. This proves conclusively that electron-hole-droplets may be created in double injection devices by electrical excitation.

The ratio of the LA- to TO-phonon-assisted luminescence intensities of the electron-hole-droplet is demonstrated to be equal to the high temperature limit of the same ratio of the exciton for Ge. This result gives one confidence to determine similar ratios for the electron-hole-droplet from the corresponding exciton ratio in semiconductors in which the ratio for the electron-hole-droplet cannot be determined (e.g., Si and GaP). Knowing the value of this ratio for the electron-hole-droplet, one can obtain accurate values of many parameters of the electron-hole-droplet in these semiconductors spectroscopically.